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    SIS00 Search Results

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    SIS00 Price and Stock

    Red Lion Controls APSIS000

    AC/DC CONVERTER 24V 5W
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    DigiKey APSIS000 Box 1
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    Quectel Wireless Solutions Co Ltd YSIS001AA

    YSIS001AA
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    DigiKey YSIS001AA 2,000
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    Avnet Silica YSIS001AA 14 Weeks 1,000
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    Quectel Wireless Solutions Co Ltd YSIS001AAEVBBA

    INT_ISM_PCB_SMD_SMA-K_433MHZ_100
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    DigiKey YSIS001AAEVBBA Bulk 1
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    Quectel Wireless Solutions Co Ltd YSIS001AAEVBAA

    INT_ISM_PCB_SMD_SMA-K_433MHZ_185
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    DigiKey YSIS001AAEVBAA Bulk 1
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    Mouser Electronics YSIS001AAEVBAA
    • 1 $50.86
    • 10 $47.42
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    Halo Electronics Inc MDSI-S001MRL

    MDSI-S001MRL - Rail/Tube (Alt: MDSI-S001MRL)
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    Avnet Americas MDSI-S001MRL Tube 190
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    SIS00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    Untitled

    Abstract: No abstract text available
    Text: BSO201SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 8.5 mΩ ID • Super Logic Level (2.5 V rated) -14.7 A • 150°C operating temperature • Avalanche rated S 1 8 D


    Original     		PDF BSO201SP SIS00062 Q67042-S4071

    BSO303P

    Abstract: No abstract text available
    Text: BSO303P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7


    Original     		PDF BSO303P SIS00070 Q67042-S4010 BSO303P

    DAP02

    Abstract: ML2612 ic dap02 F0123H F0124H nec f0123h SLC02 DAP00 MD001 CSI00
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 DAP02 ML2612 ic dap02 F0123H F0124H nec f0123h SLC02 DAP00 MD001 CSI00

    66a smd

    Abstract: smd diode S2 64a A E 82A BSO203P
    Text: BSO203P OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -20 V RDS on 21 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1


    Original     		PDF BSO203P SIS00070 Q67042-S4072 66a smd smd diode S2 64a A E 82A BSO203P

    67a smd

    Abstract: smd diode 67A smd code 67a BSK304SP diode um 67A smd 67a
    Text: BSK304SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -30 V RDS on 26 mΩ ID • Logic Level -6.7 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7


    Original     		PDF BSK304SP SIS00062 Q67042-S4065 67a smd smd diode 67A smd code 67a BSK304SP diode um 67A smd 67a

    DT306

    Abstract: No abstract text available
    Text: Target data sheet BSO4420 SIPMOS =Small-Signal-Transistor Features Product Summary  N-Channel Drain source voltage VDS 30 V Drain-source on-state resistance RDS on 9.8 m Continuous drain current ID 13 A  Enhancement mode  Avalanche rated  Logic Level


    Original     		PDF BSO4420 SIS00062 25ents DT306

    BSO613SPV

    Abstract: No abstract text available
    Text: BSO613SPV G SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.13 W · Avalanche rated Continuous drain current ID -3.44 A · dv/dt rated S 1


    Original     		PDF BSO613SPV BSO613SPV SIS00062

    BSO211P

    Abstract: No abstract text available
    Text: BSO211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 67 ID Type Package Ordering Code


    Original     		PDF BSO211P SIS00070 Q67042-S4064 BSO211P

    BSO203SP

    Abstract: No abstract text available
    Text: BSO203SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode • Super Logic Level 2.5 V rated VDS -20 V RDS(on) 21 mΩ ID -9 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated


    Original     		PDF BSO203SP SIS00062 Q67042-S4083 BSO203SP

    diode smd code 57A

    Abstract: BSO207P smd diode 57A
    Text: BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 45 ID Type Package Ordering Code


    Original     		PDF BSO207P SIS00070 Q67042-S4068 diode smd code 57A BSO207P smd diode 57A

    3G80

    Abstract: BSK211P
    Text: BSK211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode -20 V R DS on 75 m ID  Super Logic Level (2.5 V rated) 150°C operating temperature  Avalanche rated  dv/dt rated -3.5 S1 1 8 D1


    Original     		PDF BSK211P SIS00070 Q67042-S4061 3G80 BSK211P

    BSO303P

    Abstract: Q67042-S4010
    Text: BSO303P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -30 V RDS on 21 mΩ ID • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2


    Original     		PDF BSO303P SIS00070 Q67042-S4010 20angerous BSO303P Q67042-S4010

    diode smd code 57A

    Abstract: smd diode 57A BSO207P
    Text: BSO207P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1


    Original     		PDF BSO207P SIS00070 Q67042-S4068 diode smd code 57A smd diode 57A BSO207P

    BSO613SPV

    Abstract: BSO613SPV G
    Text: Preliminary data BSO613SPV SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.13 W · Avalanche rated Continuous drain current ID -3.44 A ·


    Original     		PDF BSO613SPV SIS00062 Q67042-S4021 BSO613SPV BSO613SPV G

    Circuit Diagrams

    Abstract: siemens Package Outlines ECONOPACK
    Text: SIEMENS Package Outlines and Circuit Diagrams Fig. 1 W eight: 150 g Dim ensions in mm Fig. 2 W eight: 250 g Dim ensions in mm SIS00026 Sem iconductor Group 302 SIEMENS Package Outlines and Circfuit Diagrams Fig. 3 W eight: 190 g Dim ensions in mm Fig. 4 W eight: 420 g


    OCR Scan     		PDF SIS00026 Circuit Diagrams siemens Package Outlines ECONOPACK

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 200 GA 170 DN2 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on.m in = O hm UJ Type Package b Ordering Code BSM 200 G A 170 DN2 1700V 290A SINGLE SWITCH 1


    OCR Scan     		PDF C67070-A2705-A67 C67070-A2707-A67 fi23StiOS DDflG341 235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^ G on.min = 5.6 Ohm 1c 1700V 440A UJ Type BSM300GA170DN2 E3166


    OCR Scan     		PDF BSM300GA170DN2 E3166 C67070-A2710-A67 fi235b05 DflG35t1 fi23SbOS

    Untitled

    Abstract: No abstract text available
    Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		PDF SIS0005Â Q67041-S4028 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    Untitled

    Abstract: No abstract text available
    Text: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on


    OCR Scan     		PDF BS0220N Q67000-S4010 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã D13377T

    siemens igbt

    Abstract: fr3060
    Text: SIEMENS BSM 75 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate £ BSM 75 GAL 120 DN2 1200V 105A LU Type 1c Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70


    OCR Scan     		PDF C67076-A2011-A70 SIS00022 siemens igbt fr3060

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d
    Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package


    OCR Scan     		PDF C67076-A2105-A67 Oct-13-1995 siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb siemens igbt chip ScansUX69 siemens igbt BSM 100 siemens igbt BSM 400 gb siemens igbt BSM 25 gb 100 d

    siemens igbt BSM 25 gb

    Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 120 siemens igbt BSM 10 siemens igbt BSM 150 gb 100 d siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb SIS00025 siemens igbt BSM 25 gb 100 d siemens igbt BSM 75 gb 100
    Text: Technical Information SIEM ENS 1000 V IGBT Power Modules Collector current Ic at Tc = 80 C Single switch Half-bridge VCE = 1000 V Chopper 3-phase full-bridge 5 A" - - - BSM 05 GD 100 D2> 10 A 1 - - - BSM 10 GD 100 D2) 15 A - - - BSM 1 5 G D 100 D 25 A - BSM 25 GB 100 D


    OCR Scan     		PDF SIS00025 10o11 siemens igbt BSM 25 gb siemens igbt BSM 300 siemens igbt BSM 200 GA 120 siemens igbt BSM 10 siemens igbt BSM 150 gb 100 d siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb SIS00025 siemens igbt BSM 25 gb 100 d siemens igbt BSM 75 gb 100

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 25 G D120D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type ^CE BSM 25 GD 120 D2 1200V 35A Vc Package Ordering Code SIXPACK 1 C67076-A2505-A17 Maximum Ratings


    OCR Scan     		PDF D120D2 C67076-A2505-A17 SIS00024