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    SIT STATIC INDUCTION TRANSISTOR Search Results

    SIT STATIC INDUCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SIT STATIC INDUCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIT Static Induction Transistor

    Abstract: sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30
    Text: NEW PRODUCTS UPDATE T O K lii Small-sized Static Induction Transistor SIT with high withstand voltage 'T - S I - i', led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		200ns) 35max. TC-20 TC-30 E08-875-1479 2-26A UD-04E N920920P1 SIT Static Induction Transistor sit transistor "static induction transistor" tokin sit transistor tokin Static Induction Transistor SIT transistor sit static induction transistor STATIC INDUCTION tokin TC-30 PDF

    0150SC-1250M

    Abstract: No abstract text available
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, PDF

    electrolytic capacitor, .1uF

    Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
    Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf PDF

    electrolytic capacitor, .1uF

    Abstract: z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor 0150SC-1250M
    Text: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of


    Original     		0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF z1071 "Static Induction Transistor" "silicon carbide" FET atc100b sit transistor SIT Static Induction Transistor electrolytic capacitor, 1uF 1000uf capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, PDF

    J294

    Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
    Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W PDF

    tokin sit transistor

    Abstract: SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit
    Text: TOKIN CORP NEW PRODUCTS UPDATE • 'iQbTbBb 0 0 0 1 0 5 1 1 4 1 ■ TOAI 54E D TQKIfl Small-sized Static Induction Transistor SIT with high withstand voltage 'T -S I -ii, led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high


    OCR Scan     		200ns) 35max. 2-26A UD-04E N920920P1 tokin sit transistor SIT Static Induction Transistor 58AA Static Induction Transistor SIT tokin Tokin* SIT static induction transistor 9936 transistor SIT transistor transistor sit PDF

    SIT Static Induction Transistor

    Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
    Text: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.


    OCR Scan     		2-26A L-03E SIT Static Induction Transistor 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182 PDF

    SIT Static Induction Transistor

    Abstract: Static Induction Transistor Static Induction Transistor SIT "static induction transistor"
    Text: AQV234 PhotoMOS RELAYS HS High Sensitivity Type 1-Channel (Forni A) Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control


    OCR Scan     		AQV234 E43149 LR26550 SIT Static Induction Transistor Static Induction Transistor Static Induction Transistor SIT "static induction transistor" PDF

    tokin

    Abstract: Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin
    Text: TOKIN CORP NEW PRODUCTS UPDATE 54E D • *ìGb7b2b D D G 1 Q S G 202 H I T O A I T O K in TOKIN B-SIT New TBM Series led. Outline • TOKIN is offering a new series of normally-off Bipolar mode Static Induction Transistor B-SIT constructed using small-sized molded packages in a Darlington configuration.


    OCR Scan     		dimensions56 2-26A UD-03E N920920P1 tokin Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-1500M 0405SC-1500M 1500Watts, 125mA PDF

    electrolytic capacitor, .1uF

    Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA PDF

    SIT Static Induction Transistor

    Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
    Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION


    Original     		0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF PDF

    j130 fet

    Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
    Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification PDF

    1000uf electrolytic capacitor

    Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
    Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON


    Original     		0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet PDF

    4011 cmos

    Abstract: high frequency welder circuit diagram Static Induction Transistor SIT ic cmos 4011 4011 c-mos SIT Static Induction Transistor NAND 4011 ic pinout of IC 4011 LRGAT150F100 full-bridge welder
    Text: L R G A T 7 5 F 1 00 10 00V 7 5 A A d van ced R o w er L R G A T 1 5 0 F 1 0 0 10 00V 1 5 0 A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power


    OCR Scan     		lrgat75f100 1000v 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 4011 cmos high frequency welder circuit diagram Static Induction Transistor SIT ic cmos 4011 4011 c-mos SIT Static Induction Transistor NAND 4011 ic pinout of IC 4011 LRGAT150F100 full-bridge welder PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF

    N2311A011

    Abstract: bldc sensorless 12v brushless motor driver C0851F310 dc motor speed control lm358 pittman motor stepper FAN MOTOR CONTROL SPEED WITH LM358 PWM DC SPEED MOTOR WITH LM358 12v dc motor control by PWM driver PI control SIMPLE motor dc 6v hybrid ic pwm dc motor
    Text: AN208 S E N S O R L E S S B R U S H L E S S DC M O T O R R E F E R E N C E D E S I G N 1. Introduction This reference design provides a hardware and software solution for Sensorless Brushless dc motors. This document includes complete schematics, printed circuit board layout, and firmware. The Sensorless


    Original     		AN208 N2311A011 bldc sensorless 12v brushless motor driver C0851F310 dc motor speed control lm358 pittman motor stepper FAN MOTOR CONTROL SPEED WITH LM358 PWM DC SPEED MOTOR WITH LM358 12v dc motor control by PWM driver PI control SIMPLE motor dc 6v hybrid ic pwm dc motor PDF

    Halbleiterbauelemente DDR

    Abstract: information applikation mikroelektronik Heft 12 information applikation mikroelektronik applikation heft VEB mikroelektronik mikroelektronik DDR Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft
    Text: r ï n i k a r ^ e l e l - c Information Applikation t e n a n î l - c m [ n r L ü ^ i s i î s t e k t e n a r i i k Information Applikation HEFT 3 4 : H A LBLEITER V EN TILE und LEISTU N GSELEKTRO N IK v»bmikrooloVtronîk.kartItebknefchtiBtfthnnddtf imvobNombinfttmitiroeloktronik


    OCR Scan     		PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original     		PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF

    schematic diagram 415VAC to 24VDC POWER SUPPLY

    Abstract: schematic diagram induction heater wiring diagram, variable speed drives 3 phase transformer 415vac 1838 ir remote sensor ac induction motor direct torque control using fu 3 phase inverter schematic diagram for 10Hp motor schematic diagram for 120vac voltage conditioner Allen-Bradley bulletin 1500 schematic diagram inverter air conditioner
    Text: 1 ^ 1 A L L E N -B R A D L E Y Instruction Manual Bulletin 1334 5,7±& 10 HP Adjustable Frequency A C Motor Drives Series A Price: $25.00 Important User Information Because of the variety of uses for th is equipm ent and because of the differences betw een th is solid state equipm ent


    OCR Scan     		T3-10 800T-3TW60 800T-4TW64 schematic diagram 415VAC to 24VDC POWER SUPPLY schematic diagram induction heater wiring diagram, variable speed drives 3 phase transformer 415vac 1838 ir remote sensor ac induction motor direct torque control using fu 3 phase inverter schematic diagram for 10Hp motor schematic diagram for 120vac voltage conditioner Allen-Bradley bulletin 1500 schematic diagram inverter air conditioner PDF