Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIVN TRANSISTOR Search Results

    SIVN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SIVN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sivn

    Abstract: sivn fet
    Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN0300 DSFP-VN0300 A122308 sivn sivn fet PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN2410 DSFP-VN2410 A020209 PDF

    sivn

    Abstract: No abstract text available
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN0606 DSFP-VN0606 A020209 sivn PDF

    sivn

    Abstract: sivn fet marking n3 VN0109N3-G VN0109
    Text: VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN0109 DSFP-VN0109 A041409 sivn sivn fet marking n3 VN0109N3-G VN0109 PDF

    sivn fet

    Abstract: sivn
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN1206 DSFP-VN1206 A020209 sivn fet sivn PDF

    sivn

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities


    Original
    VN3515 DSFP-VN3515 A020209 sivn PDF

    sivn

    Abstract: No abstract text available
    Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN0808 DSFP-VN0808 A020209 sivn PDF

    sivn

    Abstract: sivn fet 125OC VN3515 3515L
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN3515 DSFP-VN3515 A020209 sivn sivn fet 125OC VN3515 3515L PDF

    a50tf

    Abstract: sivn SiVN 0 8 0 8 L VN2106 125OC VN2106N3-G
    Text: VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    VN2106 VN2106 DSFP-VN2106 A122308 a50tf sivn SiVN 0 8 0 8 L 125OC VN2106N3-G PDF

    sivn

    Abstract: VN0550 VN0550N3-G 125OC
    Text: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    VN0550 VN0550 DSFP-VN0550 A020209 sivn VN0550N3-G 125OC PDF

    sivn

    Abstract: sivn fet vn10kn3-g SiVN 0 8 0 8 L VN10KN VN10KN3 VN0106N3 VN10K
    Text: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN10K DSFP-VN10K A022109 sivn sivn fet vn10kn3-g SiVN 0 8 0 8 L VN10KN VN10KN3 VN0106N3 VN10K PDF

    sivn

    Abstract: VN4E seimens MARKING CODE BV sot-89 125OC VN2450
    Text: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2450 DSFP-VN2450 A052209 sivn VN4E seimens MARKING CODE BV sot-89 125OC VN2450 PDF

    sivn

    Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
    Text: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN2460 DSFP-VN2460 A011409 sivn vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G PDF

    sivn

    Abstract: sivn fet VN0104N3-G marking n3 VN0104 sivn transistor DSPD-3TO92N3
    Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN0104 DSFP-VN0104 A020209 sivn sivn fet VN0104N3-G marking n3 VN0104 sivn transistor DSPD-3TO92N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a


    Original
    VN10K DSFP-VN10K B031411 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original
    VN0109 DSFP-VN0109 C081913 PDF

    sivn

    Abstract: 125OC VN0550 VN0550N3-G
    Text: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    VN0550 VN0550 DSFP-VN0550 A022109 sivn 125OC VN0550N3-G PDF

    sivn

    Abstract: sivn fet vn10k
    Text: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN10K DSFP-VN10K A122308 sivn sivn fet PDF

    sivn

    Abstract: VN2224 125OC
    Text: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    VN2224 VN2224 DSFP-VN2224 A122308 sivn 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: VN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain The Supertex VN2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure


    Original
    VN2106 VN2106 DSFP-VN2106 A122308 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original
    VN0106 DSFP-VN0106 C081913 PDF

    sivn

    Abstract: vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN3205 DSFP-VN3205 B052109 sivn vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521 PDF

    marking 3A sot-89

    Abstract: 3V02 SIVN3205 VN3205
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    VN3205 DSFP-VN3205 B022109 marking 3A sot-89 3V02 SIVN3205 PDF

    VN10K

    Abstract: VN0106N3 VN10KN3-G sivn
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input


    Original
    VN10K DSFP-VN10K B031411 VN10K VN0106N3 VN10KN3-G sivn PDF