Contextual Info: SJ SERIES n FOOTPRINT l Schematics BOTTOM VIEW l PC board mounting hole layout (BOTTOM VIEW) SJ-( )A Type SJ-( )AN type l Schematics (BOTTOM VIEW) SJ-( )D type l PC board mounting hole layout (BOTTOM VIEW) SJ-( )DN type Fujitsu Components International Headquarter Offices

Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

Contextual Info: PRELIMINARY 4,194,304 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION T he T C514101A P/A J/A SJ/A Z is the new gen eratio n dynam ic RAM organized 4,194,304 words by 1 bit. T he TC514101A P/A J/A SJ/A Z utilizes TO SH IB A ’S CMOS Silicon gate process technology as w ell as

1N5614 JANTX

Abstract: 1N5614 JANTX1N5614 equivalent
Contextual Info: 1N5614/US thru 1N5622/US Standard ST ANDARD RECOVERY RECTIFIERS TECHNICAL DATA AVAILABLE AS DATA SHEET 874, REV. C.2 1N JAN JANTX JANTXV EQUIVALENT SJ,SX,SV * JANS SPACE EQUIVALENT SS*

AZ60

Abstract: aj 312 TC514400AP ZIP20-P-400A 512kx4
Contextual Info: 1,048,576 W O R D x 4 B!T D Y N A M IC RA M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The T C 5 14 4 0 0 A P/A J/A SJ/A Z is the new generation dynamic RAM organized 1 ,048,576 words by 4 bits. The TC 514400A P /A J/A SJ/A Z utilizes T O SH IB A ’S CMOS Silicon gate process technology as well

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x 4 BIT DYNAM IC RAM * This is advanced information and specifica­ tions are subject to change without notice. D ESC R IP T IO N The T C 514402A P /A J/A SJ/A Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The T C 514402A P /A J/A SJ/A Z utilizes TO SH IBA ’S CMOS Silicon gate process technology as well as

OHL02514

Contextual Info: BD Biosciences SJ, Confidential CO HISTORY 01 - CO # DATE 500000000950 - 03/12/12 - CHANGE CODES a CO CHANGE CODES OPERATIONAL SPECIFICATIONS: The operational characteristics of this device shall be in accordance with the applicable manufacturers published

Sj Schottky Rectifier

Contextual Info: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •

Contextual Info: PRELIMINARY 1,048,576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION T he T C 514410A P /A J/A SJ/A Z is the n e w g en e ra tio n dyn am ic R A M organized 1 ,0 4 8 ,5 7 6 words by 4 bits. T he T C 514410A P /A J/A SJ/A Z u tiliz es T O S H IB A ’S CM OS S ilico n gate process tech n ology as w e ll as

mil-std-1553b SPECIFICATION

Abstract: honeywell dcs manual smd code A1t MIL-STD-1773 A1t smd TSI S 14001 1553 SUmmit me 555 AS1773 UT69151
Contextual Info: S f.lMMIT TM Reference Manual Aeroflex Colorado Springs 4350 Centennial Blvd. Colorado Springs, CO 80907 719-594-8000, 719-594-8468 fax www.aeroflex.com/radhard SJ.1MMITTMReference Manual Table of Contents Overview Presentation Section 1 Engineering Notebooks

Sj 35 diode

Contextual Info: / 2SK3512-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

2SK3521-01L

Abstract: 2SK3521-01S 100V 100A mos fet
Contextual Info: 2SK3521-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

DIODE marking code SJ

Abstract: Diode SJ marking SJ date diode diode marking SJ diode marking code 4n Sj 35 diode Phototriac Coupler Diode SJ 12 ma 8630 LR35579
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g l High reliability, long life and maintenance free

R07DS0733EJ0100

Abstract: 7V10V
Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching

Diode SJ

Abstract: Diode SJ 02 Diode SJ 12 LR35579 Diode SJ 9 HZ- zener
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

Diode SJ

Abstract: Diode SJ 12 LR35579 FUJITSU RELAY Sj 35 diode Diode SJ 14 Diode SJ 03 E45026 and/sj 1408
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching

Diode SJ

Abstract: LR35579 Diode SJ 12 Sj 35 diode Diode SJ 9 Diode SJ 14 E45026 Transistor SJ Sj diode
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

GT-RLSA3450

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. GT-RLSA3450 ELECTRICAL SPECIFICATIONS CONDITION UNITS RATING D .C . FIRING VOLTAGE: dv/dt 500V/5 450V±15% D.C. IMPULSE CURRENT: IMPUSLE CURRENT SURGE U F E : (B/20 jj SJ (10 /10 0 D jj S 5D0A) 1.5KA MAX. 1000 TIMES MIN.

204B

Abstract: GT-RLSA3300 CF70000 CF700
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. GT-RLSA3300 ELECTRICAL SPECIFICATIONS CONDITION UNITS RATING D .C . FIRING VOLTAGE: dv/dt 500V/5 300V±15% D.C. IMPULSE CURRENT: IMPU5LE CURRENT SURGE U F E : (B/20 jj SJ (10 /10 0 D jj S 5D0A) 1.5KA MAX. 1000 TIMES MIN.

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

JAN 1N5618

Abstract: 1N5614 JANTX
Contextual Info: 1N5614/UL 1N5616/UL 1N5618/UL 1N5620/UL 1N5622/UL SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 874, REV. A SJ SX SV HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT

Contextual Info: Preliminary Datasheet RJK60S4DPP-E0 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0638EJ0200 Rev.2.00 Jul 20, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  High speed switching