Untitled
Abstract: No abstract text available
Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCH47N60N
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SERDES
Abstract: fch47n60n 511 MOSFET
Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCH47N60N
FCH47N60N
SERDES
511 MOSFET
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Untitled
Abstract: No abstract text available
Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCH47N60N
11PLANARâ
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Abstract: No abstract text available
Text: FCH47N60 N-Channel SuperFET MOSFET 600 V, 47 A, 70 m Features Description • 650 V atTJ = 150°C The FCH47N60 SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high-voltage super-junction SJ MOSFET family that utilizes charge-balance technology for outstanding
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FCH47N60
FCH47N60
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Untitled
Abstract: No abstract text available
Text: FCH47N60 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCH47N60
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FCA47N60F
Abstract: No abstract text available
Text: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA47N60
FCA47N60F
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Abstract: No abstract text available
Text: FCH47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @ TJ = 150 C ® SuperFET MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
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FCH47N60F
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Abstract: No abstract text available
Text: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA47N60
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General Semiconductor SJ diode
Abstract: FCH47N60F-F133 fch47n60f
Text: FCH47N60F_F133 N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
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FCH47N60F
General Semiconductor SJ diode
FCH47N60F-F133
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Untitled
Abstract: No abstract text available
Text: FCH47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @TJ = 150 C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
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FCH47N60F
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Abstract: No abstract text available
Text: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA47N60
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Abstract: No abstract text available
Text: FCA47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @ TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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Abstract: No abstract text available
Text: FCH47N60_F133 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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Untitled
Abstract: No abstract text available
Text: FCH47N60_F133 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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ASM1442
Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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BREMEN-15C/17C
BREMEN-15C/17C
BA41-xxxxxA
100nF
C1114
ASM1442
bd82hm55
SMSC mec1308
mec1308
Intel hm55
JLCD500
HM55 CRB
smsc mec1308-nu
LTST-C193TBKT-AC
N11X-GE1
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bcore-an-008P
Abstract: BlueCore6 Selection of i2c eeproms for use with bluecore BC63C159A CS-112584-SP CS-116434-ANP CS-112584-SPP CS-116434-An bcore-an-066P JESD22-A224
Text: Device Features • ■ ■ ■ ■ ■ Single Chip Bluetooth v2.1 + EDR System Fully qualified Bluetooth v2.1 + EDR Full speed Bluetooth Operation with Piconet and Scatternet Support Best in Class Bluetooth Radio with +8dBm Transmit Power and -90dBm Receive Sensitivity
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-90dBm
16-bit
BC63C159A
2002/95/EC)
CS-114838-DSP2
bcore-an-008P
BlueCore6
Selection of i2c eeproms for use with bluecore
BC63C159A
CS-112584-SP
CS-116434-ANP
CS-112584-SPP
CS-116434-An
bcore-an-066P
JESD22-A224
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37 TV samsung lcd Schematic circuit diagram
Abstract: smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 BA41-01039A schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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BA41-01039A
BA41-01040A
BA41-01041A
BA41-01039A
/Users/mobile29/mentor/Bonn/BONN-INT
37 TV samsung lcd Schematic circuit diagram
smd 475 20k 233 DIODE
samsung lcd tv power supply schematic
pcb circuit diagram of crt tv samsung
BB509
ICSL6256
schematic diagram crt tv samsung
schematic Samsung TV led backlight
AP4435
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Sj 47 diode
Abstract: power supply 100v 30a schematic
Text: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3646-01L
Sj 47 diode
power supply 100v 30a schematic
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Microsemi
Abstract: 1N5120 SJ 9245 ic 7494 1N4973US JANTX1N4972
Text: Zener Regulator Diodes Microsemi h Part Number UZS750 Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana Scottsdale Scottsdale Watertown Watertown Santa Ana Watertown Santa Ana Santa Ana Scottsdale Scottsdale Santa Ana Santa Ana Santa Ana
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ZEN-123
Microsemi
1N5120
SJ 9245
ic 7494
1N4973US
JANTX1N4972
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CR356A
Abstract: SM355 SM351 CR344 CR345 CR346 CR347 CR348 CR349 CR350
Text: CURRENT REGULATOR DIODES Pin ch Oft Cun-ent at as VDC U A > IllilsS : P a rt N u m b er Packag e Type Minimum Nominal Maximum Limiting Voltage at 0.811,. V t (V o lts Dynam ic Im pedance at V, =25V Z. (K O h m sJ K nee Im pedance at V.= 6V Z. (K O h m s)
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CR344
CR345
CR346
CR347
CR348
CR349
4SM343
SM344
SM345
SM346
CR356A
SM355
SM351
CR344
CR347
CR349
CR350
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NA42
Abstract: No abstract text available
Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.
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1SV303
C2V/C25V
NA42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)
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1SV302
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE KSQ30A06 KSQ30A06B soa/ gov FEATURES o Sim ilar to TO-247AC TO-3P Case 15.91.626) I ' I5 .3 .6 n 2 )J 1 3.6( 1421 „ T irrm c O Low F orw ard V oltage Drop o Low Pow er Loss, High Efficiency o H igh Surge C urrent Capability 0 4 0 V olts thru 60 V olts Types
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KSQ30A06
KSQ30A06B
O-247AC
10ICII
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