3SK122
Abstract: sk 122 SK122 1SK09 W1217 4TO220 A109 Leistungstransistor
Text: A Strangkühlkörper 3,2 17 20 14,8 K/W 10 29 8 7 29 K SK 145 20 TO 220 15,5 12 17,7 3,2 50 1000 mm TO 220 14 4,5 11,3 7 29 SK 145 37,5 TO 220 3,2 100 150 200 mm 50 100 150 200 mm SK 145 50 TO 220 3,2 3 12 3,2 14 14,75 50 17,7 4,5 11,3 4,5 SK 145 25 TO 220
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SK 50 et 12
Abstract: Dissipateur A123 TO-66-3 a9311 Heatsinks to-220 AA93
Text: A U-Kühlkörper U-shaped heatsinks Dissipateurs en U K/W 25 9 20 15 15 1,5 SK 12 10 5 12 1000 mm 25 50 75 100 mm 50 100 150 200 mm 25 50 75 100 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 20 10 16 2 16 SK 192 18 14 12 14 50 1000 mm K/W 25
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Heatsinks sk 489
Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
Text: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247
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sk 473
Abstract: SK5137 A461A SK43A SK113 2SK519 SK1100 SK-1360 3SK122 SK1856
Text: A 1:1 Strangkühlkörper Dissipateurs extrudés Extruded heatsinks K/W 36 33 6,3 3,9 6,5 30 1,3 SK 522 27 10,6 12,6 24 15 25 37,5 50 1000 mm 15 30 45 50 mm 50 100 150 200 mm 50 100 150 200 mm 50 100 150 200 mm K/W 26 24 22 20 8 SK 521 3 18 15,3 25 37,5 50 75 100 1000 mm
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Untitled
Abstract: No abstract text available
Text: A U-Extruded heatsinks art. no. Rth [K/W] B 25 9 20 15 15 1,5 10 5 C 12 SK 12 . 25 50 100 [mm] 75 . please indicate: 1000 mm art. no. D Rth [K/W] 25 14 20 15 13 1,5 10 E 5 17 25 50 75 100 [mm] 100 150 200 [mm] SK 13 . please indicate: F . 25 35 mm
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Heatsinks sk 489
Abstract: SK481 W108 2SK514
Text: Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 29,4 45 K/W 10 8 6 4 SK 489 M3 2 8 12 25 37,5 50 75 84 100 1000 mm 50 100 150 200 mm 50 100 150
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SK 43
Abstract: SK482 Heatsinks sk 499 heatsinks SK495 A85A
Text: A Strangkühlkörper für Einrast-Transistorhaltefeder Extruded heatsinks for lock-in retaining spring Dissipateurs extrudés pour ressort de retenue à encliqueter 10,3 K/W 35 7 6 5 12,5 4 SK 482 3 2 1 M3 25 37,5 50 75 84 100 1000 mm 25 8 50 100 150 200 mm
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SK 50 et 12
Abstract: Heatsinks SK432 SK173 to 126 leistungstransistoren
Text: 1:1 A Dissipateurs spéciaux 26 Special heatsinks 51 Spezialkühlkörper K/W 2,5 2,0 1,5 51,5 1,0 0,5 SK 46 50 100 150 200 mm 50 75 1000 mm Taraudages, trous débouchants et fentes de fixation suivant votre spécification. 12 ,5 Threads, through holes and fixing slots
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thyristor st 103
Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction
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Varistoren lebensdauer
Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
Text: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen
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semikron skpt
Abstract: SKPT 11 semikron skpt 25 SK Ferrite Core semikron pulse transformer SEMIKRON type designation Semikron skpt 27 3/10 semikron Semiconductor Fuses current transformer semikron SKPT 25
Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction
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transistor k 525
Abstract: transistor 525 transistor 526 Dissipateur SK s 55 Heatsinks to-220 sk 100 transistor
Text: A AufsteckStrangkühlkörper Attachable extruded heatsinks Dissipateurs extrudés à enficher – dissipateurs extrudés avec dispositif de fixation à ressort intégré – montage facile en enfichant le dissipateur sur le transistor – transmission optimale de la chaleur
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Untitled
Abstract: No abstract text available
Text: RF2423 I MICRODEVICES 100 mW SPREAD-SPECTRUM TRANSMITTER IC Typical Applications • Digital Communications Systems • Analog Communications Systems • Spread Spectrum Communications Systems • FM, AM , SSB, DSB Modulation • FSK, G M SK , Q P S K , D Q P SK , Q AM Modulation • Portable Battery Powered Equipment
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RF2423
11Note
7341-D
RF2423-5
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Semikron sk 100 dal
Abstract: Semikron sk 75 SKHB10 Semikron sk 50 da SKHB 10 sk 100 transistor SK75DAL SK 300 CIRCUIT Semikron sk 100 semikron SK 50 DB 100 D
Text: se MIKRO n Section 7: SEMITRANS Bipolar Power Transistor Modules Summary of types Type Ptot h21E I tf ts resistive load Tvj = 25 °C Circuit Page VcEVsus le VcEsat V A V lc A VcE = 5V lc A W US M-S SK 50 DA 100 D • SK 50 DA 120 D 1000 1200 50 50 2,5 3
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T-047
Abstract: SK4909 SK9032 SK3996 SK9031 T047 SK3960 SK3959 SK3961 SK9034
Text: THOMSON/ ESQ DISTRIBUTOR SfiE D BIPOLAR TRANSISTORS • TDStjfl73 0 0 0 4 Ö 2 7 TOO ■ TCSK . coni Maximum Ratings TCE Type Breakdown Voltages Device Polarity <S Material Application ‘complementary äewce type Device Power Dissipato. Collector Current
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TD3bfl73
D0D4fl27
SK3949
SK3948
SK3958
SK3959
SK3959
SK3958
SK3960
SK3961
T-047
SK4909
SK9032
SK3996
SK9031
T047
SK3961
SK9034
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SK9042
Abstract: SK9134 SK9041 SK9111 SK9085 sk9131 SK9109 SK9107 SK9110 SK9115
Text: T H OM SO N/ D I S T R I B U T O R [ml] SflE D • T02bfl73 O Q O H a P T ÖÖ3 ■ TCSK BIPOLAR TRANSISTORS cour. Maximum Ratings Breakdown Voltages Device Polarity & TICE Type Application Material ’complementary device type Device Power Dissipatn.
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02Ufl73
SK9040
SK9041
SK9042
SK9042
SK9041
SK9076
SK3357
SK9085
SK9107
SK9134
SK9111
sk9131
SK9109
SK9110
SK9115
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transistor mpsa20 equivalent
Abstract: bc 357 transistor MPSA20 MPS-K20 MPS-K20 WHITE MPS-K21 MPS-K21 RED MPS-A20 Three-Five MPS-K22
Text: 2 SILICON M P S - A M P S - K 2 M P S - K 2 2 , M P S - 2 K I , NPN SILICON AMPLIFIER TRANSISTORS NPN SILICON ANN U LAR TRANSISTO RS . . designed fo r u n In audio, radio, a n d television applications. e e M P S - K 2 0 , M P S - K 2 1 , M P S - K 2 2 are 3, 5 and 9
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MPS-A20
MPS-K20,
MPS-K22
MPS-K21,
MPS-K22
MPS-A20,
transistor mpsa20 equivalent
bc 357 transistor
MPSA20
MPS-K20
MPS-K20 WHITE
MPS-K21
MPS-K21 RED
MPS-A20
Three-Five
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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SK3180
Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current
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SK3179B
SK3178B
SK3180
SK3181A
SK3181A
SK3180
SK3182
SK3183A
SK3183A
SK3182
SK3220
SK3219
SK3197
SK3188A
SK3191
SK3201
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2SK19Y
Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
2SK19Y
C682
2SK19GR
X70a
FSP400
40468
C621
K1202
C682A
C684
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sk9134
Abstract: SK9133 SK9085 SK9362 SK9117 rca 036 SK9134/181 SK9362/376 sk9363 SK9116
Text: THOMSON/ DISTRIBUTOR GTE D | “ìGSbflTa □ □ □ 3 3 b ci ñ | T-%Z - I "7 3ipolar Transistors cont’d CHARACTERISTICS LIMIT CONDITIONS BREAKDOWN VOLTAGE RCA Type Polarity and Material - Device D illipation Pi W SK9076/187A SK 9 0 85/379f PNPSi N PN Si
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33bcl
SK9076/187A
T0-202M
T-039
SK9085/379f
O-220
T-036
SK9112/377t
T0-220
sk9134
SK9133
SK9085
SK9362
SK9117
rca 036
SK9134/181
SK9362/376
sk9363
SK9116
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AUY 10
Abstract: AUY19 legiert Q62901-B11-A pnptransistor W130 AUY20V PNP-Germanium
Text: PNP-Transistoren für Schalteranw endungen bis 3 A A U Y 19 A U Y 20 A U Y 19, A U Y 20 sind legierte PNP-Germanium-Transistoren im Gehäuse 3 A 2 DIN 41872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren sind besonders für den Einsatz als NF-Leistungsschalter geeignet.
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Q62901-B11-A
Q62901-B13-B
Q60120-Y19-C
Q62901-B13-B
Q60120-Y19-D
Q62901-B11-A
AUY19
Q60120-Y19-E
Q60120-Y20-C
Q60120-Y20-D
AUY 10
legiert
pnptransistor
W130
AUY20V
PNP-Germanium
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Untitled
Abstract: No abstract text available
Text: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn zeichnet. Für folgende Arbeitspunkte gilt:
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Untitled
Abstract: No abstract text available
Text: BCX 24 N P N -S iliziu m N F -T ran sisto r V o r lä u f ig e D a te n B C X 24 ist ein epitaktischer NPN-Silizium -Planar-Transistor im Metall-Gehäuse 18 A 3 D IN 41 8 7 6 T O -1 8 . Besonders in N F -V o r- und Treiberstufen, sow ie für universelle A n
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Q62702-C750-S20
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