Semikron sk 20
Abstract: Semikron Semitop sk 70 dt 08 field controlled thyristor 3SK40 SK 70 DT 16
Text: SK 40 DT, SK 70 DT VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge
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SK40DT
Semikron sk 20
Semikron Semitop sk 70 dt 08
field controlled thyristor
3SK40
SK 70 DT 16
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3SK40
Abstract: field controlled thyristor
Text: VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge Recitifiers SK 40 DT
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12ward
SK40DT
ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk40dt
3SK40
field controlled thyristor
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3SK40
Abstract: No abstract text available
Text: VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge Recitifiers SK 40 DT
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SK40DT
ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk40dt
3SK40
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SK1640C
Abstract: SK16100C
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1600-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-220AB PACKAGE Low switching noise FULLY INSULATED PACKAGE A
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SBDT-1600-1B
O-220AB
SK1640C
O-220
SK1640C-1650C
SK1660C-1670C
SK16100C
97bsbdt16
SK1640C
SK16100C
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3SK80
Abstract: No abstract text available
Text: SK 80 GB 063 Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 81 / 57 162 / 114 79 / 53 158 / 106 V V A A A A – 40 . + 150 – 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C
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80GB063
3SK80
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relais thermique
Abstract: S507 SKL20120
Text: S/MOD/SKL20120/C/18/02/2005 page 1 / 3 F/GB Relais Statique pour circuit imprimé Solid State Relay for printed circuit board SKL20120 8-32VDC control 16A*/ 230VAC output • Gamme pour circuit imprimé pour montage sur dissipateur thermique. • Technologie DCB Direct Copper Bonding
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S/MOD/SKL20120/C/18/02/2005
SKL20120
8-32VDC
230VAC
0A/1800A2s
5A/5000A2s
0A/1800A2s
relais thermique
S507
SKL20120
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3MWS
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 1200 ± 20 16 / 11 32 / 22 18 / 12 36 / 24 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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SK10GD123
ETIN\FRAMEDAT\datbl\B17-Semitop\sk10gd123
3MWS
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SK24100C
Abstract: SK2440C SK2460C TO247AB SK1640C
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-2400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop
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SBDT-2400-1B
O-247AB
SK2460C
O-247
SK1640C-1650C
SK1660C-1670C
SK16100C
97bsbdt24
SK24100C
SK2440C
SK2460C
TO247AB
SK1640C
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Untitled
Abstract: No abstract text available
Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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SK52B
SK515B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B102
D1309050
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Untitled
Abstract: No abstract text available
Text: SK12B thru SK115B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SK12B
SK115B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B102
D1307003
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c2810
Abstract: thermique relais thermique 98055 S507 SKL10120
Text: S/MOD/SKL10120/C/28/10/2004 page 1 / 3 F/GB Relais Statique pour circuit imprimé Solid State Relay for printed circuit board SKL10120 4-14VDC control 16A*/ 230VAC output • Gamme pour circuit imprimé pour montage sur dissipateur thermique. • Sortie AC synchrone.
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S/MOD/SKL10120/C/28/10/2004
SKL10120
4-14VDC
230VAC
WF032000
0A/1800A2s
5A/5000A2s
c2810
thermique
relais thermique
98055
S507
SKL10120
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Untitled
Abstract: No abstract text available
Text: SK22A thru SK215A Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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SK22A
SK215A
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
JESD22-B102
D1308027
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Untitled
Abstract: No abstract text available
Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SK52B
SK515B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
D1406034
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Untitled
Abstract: No abstract text available
Text: SK52B thru SK515B Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SK52B
SK515B
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B102
D1309050
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Untitled
Abstract: No abstract text available
Text: SK22A thru SK215A Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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SK22A
SK215A
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
D1308027
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SK 200 GAR 125
Abstract: 3SK60 2SK60
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 1200 ± 20 58 / 40 116 / 80 57 / 38 104 / 76 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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SK60GAR/L123
tin\FRAMEDAT\datbl\B17-Semitop\sk60gal123
SK 200 GAR 125
3SK60
2SK60
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Untitled
Abstract: No abstract text available
Text: SK 45 GH 063 Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 45 / 30 90 / 60 57 / 38 114 / 76 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C
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45GH063
xls-13
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SCT 380
Abstract: t15 thyristor sk 3003 s Semikron Semitop sk 70 dt 08 SEMITOP t15-40 thyristor BRIDGE-RECTIFIER compact SK 70 DT 16
Text: SK 70 DT k - 68 A full conduces« C V -e o -c ) VRWi- VOFM V SEMITOP0 3 V 930 800 S K 70 D T 08 1300 1200 S K 70 D T 12 1700 1600 S K 70 D T 16 S ym bol C o n d itio n s «0 T # - 8 0 -C •tsm T ^ - 2 5 *C ; 10 ms 450 A T ^ - 1 2 5 *C; 1 0 m s 380 A T ^ - 2 5 -C; 8 .3 . 1 0 ms
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)
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TC524162
TC524165
TC524162/I65
144-words
16-bits
512-words
TC524162/165
C-352
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DIODE T25 4 H5
Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 V126 SEMITOP weight THYRISTOR tv 930
Text: SK 70 DH V RW i- V OFM V k - 68 A fu ll co n d uce s« V 9C0 800 S K 70 DH 08 1300 1200 S K 70 DH 12 1700 1600 S K 70 DH 16 S ym bol C o n d itio n s 'o T # - 8 0 -C •f sm •' T ^ - 2 5 *C ; 10 ms C V -e o -c ) V alues - 126 *C; 1 0 m s SEMITOP 3 Half Controlled Bridge
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Untitled
Abstract: No abstract text available
Text: NM93C86A N a tio n al Semiconductor NM93C86A 16,384-Bit Serial Interface, Standard Voltage CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The NM93C86A is 16,384 bits of CMOS nonvolatile, electri cally erasable memory available in user organized as either
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NM93C86A
384-Bit
NM93C86A
16-bit
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skiip gb 120
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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Untitled
Abstract: No abstract text available
Text: silìJllCllii Ifrm s V rsm 110 A V rrm Ifa v sin. 180; Fast Diode 1 Modules = 65 °C; 50 Hz) 70 A T ease V 1600 SKKD 60 F 16 1700 SKKD60 F 17 Symbol Conditions Ifa v Sin. 180; T ease = T ease = Ifs m T vj = T vj = i2t I rm SEMIPACK 2 (maximum values for continuous operation)
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SKKD60
B2-11
O-240
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n V rsm V rrm dv/ SEMIPACK 1 Thyristor / Diode Modules Itrms (maximum value for continuous operation 180 A V drm dt)cr Itav (s ¡n - 180; Toase = 80 °C) V V V/|xs 115 A 500 400 500 - - SKKH 105/04 D - 700 600 500 SKKT 105/06 D SKKT 106/06 D
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SKKT106B
KT10510
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