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Text: SKM 150GB128D . Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Symbol Conditions SEMITRANSTM 3 SPT IGBT Modules SKM 150GB128D Target Data IGBT VCES Tcase = 25 80 °C IC ICRM Tcase = 25 (80) °C, tp = 1 ms VGES Tvj, (Tstg) TOPERATION ≤ Tstg
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150GB128D
150GB128D
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150GB128D
Abstract: No abstract text available
Text: SKM 150GB128D Absolute Maximum Ratings Symbol Conditions IGBT % % 56 7 9" 1 3 SEMITRANSTM 3 SPT IGBT Modules SKM 150GB128D Preliminary Data Features
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150GB128D
150GB128D
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Untitled
Abstract: No abstract text available
Text: SKM 150GB128D Absolute Maximum Ratings Symbol Conditions IGBT % % 67 9 ;" 1 3 SEMITRANSTM 3 SPT IGBT Modules SKM 150GB128D Preliminary Data Features
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150GB128D
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Untitled
Abstract: No abstract text available
Text: SKM 150GB128D Absolute Maximum Ratings Symbol Conditions IGBT % % 56 7 9" 1 3 SEMITRANSTM 3 SPT IGBT Modules SKM 150GB128D Features !"
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150GB128D
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5193M
Abstract: No abstract text available
Text: SKM 150GB128D Absolute Maximum Ratings Symbol Conditions IGBT % % 56 7 9" 1 3 SEMITRANSTM 3 SPT IGBT Modules SKM 150GB128D Features !"
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150GB128D
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SKM150GB128D
Abstract: SKM 150GB128D
Text: SKM 150GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* )* & 2* . 13* & )* & 7 )* 1* ; )- . 1-* & 2* . 1* & )* & 11* & -* & 3*= @ 1-*
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150GB128D
SKM150GB128D
SKM 150GB128D
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Untitled
Abstract: No abstract text available
Text: SKM 150GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* )* & 2* . 13* & )* & 7 )* 1* ; )- . 1-* & 2* . 1* & )* & 11* & -* & 3*= @ 1-*
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150GB128D
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SKM150GB128D
Abstract: No abstract text available
Text: SKM 150GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* )* & 2* . 13* & )* & 7 )* 1* ; )- . 1-* & 2* . 1* & )* & 11* & -* & 3*= @ 1-*
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150GB128D
SKM150GB128D
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453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1
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AN-9001
453gb12e4s
SEMIX 71GD12E4S
300gb12e4
igbt cross-reference
SKM200GB128D
SEMiX 202GB12E4s
SEMiX453GB12E4
101GD12E4s
IGBT cross reference semikron
303GD12E4-c
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