Untitled
Abstract: No abstract text available
Text: SKM 400GA173D Absolute Maximum Ratings Symbol Conditions IGBT ?IW& EI EI[$ ?¥W& M-^9 ,M<+16 ?'<./ SEMITRANSTM 4 IGBT Modules SKM 400GA173D SKM 400GA173D1S Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.>
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400GA173D
400GA173D1S
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Untitled
Abstract: No abstract text available
Text: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& U-^9 ,U<+16 ?'<./ SEMITRANSTM 3 IGBT Modules SKM 150GB173D Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;.12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.>
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150GB173D
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Untitled
Abstract: No abstract text available
Text: SKM 300GA123D Absolute Maximum Ratings Symbol Conditions IGBT ?IT& EI EIX$ ?ZT& M-¥9 ,M<+16 ?'<./ SEMITRANSTM 4 IGBT Modules SKM 300GA123D Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;.12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.>
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300GA123D
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semikron SKS
Abstract: B43875A5478 B43875 SKS 50F 9CN1 CN25 B6CI semikron SKpc 22 Three-phase inverter SEMISTACK
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITRANS Stack 1 Three-phase inverter SKS 50F B6U+B6CI+B1CI 19 V12 SKM 100 GB 124D SKKD 46/12 P3/380F SKHI 22B Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w
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10min
B43875A5478
semikron SKS
B43875
SKS 50F
9CN1
CN25
B6CI
semikron SKpc 22
Three-phase inverter
SEMISTACK
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400V igbt dc to dc buck converter
Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
Text: SEMISTACK - IGBT Circuit Irms A Vac / Vdcmax Types B6CI 30 440 / 750 SEMITEACH - IGBT Symbol Conditions Irms SEMITRANS Stack1) Three-phase rectifier + inverter with brake chopper SEMITEACH - IGBT SKM 50 GB 123D SKD 51 P3/250F Features VCES VCE(SAT) VGES
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F/400V
P3/250F
400V igbt dc to dc buck converter
semikron SKm 123D
semikron SKm 50 GB 123D
SEMITEACH
single phase inverter IC IGBT
123D
Semitrans inverter rectifier
B6U 380
single phase inverter IGBT
b6u b6ci
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skm 195 gb 125 dn
Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D
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400GAL125D
101GD066HDS
151GD066HDS
201GD066HDS
202GB066HDs
302GB066HDs
402GB066HDs
SEMIX171KH16S
SEMIX191KD16S
SEMIX241DH16S
skm 195 gb 125 dn
IGBT ultra fast
SKM200GB12E4
303GB12E4s
SKM300GB123D
igbt sixpack
skm 50 gb 100 d
151GB12E4s
skm200gb123d
bridge rectifier 107
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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B43875
Abstract: B43875A5228 semikron SKHI 123D SKS 25F semikron SKm 50 GB 123D semikron SKS B6CI 16 V12 IGBT J19 Connector SKHI B4387
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITRANS Stack Three-phase inverter SKS 25F B6U+B6CI 09 V12 SKM 50 GB 123D SKKD 46/12 P3/410F SKHI 23/12-S 1 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling
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10min
B43875A5228
B43875
semikron SKHI 123D
SKS 25F
semikron SKm 50 GB 123D
semikron SKS
B6CI 16 V12
IGBT J19
Connector SKHI
B4387
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Untitled
Abstract: No abstract text available
Text: SKM 200 GB 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: SKM 145 GB 128 DN Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C
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IGBT SKM 145 GB 063 DN
Abstract: M145GB063DN
Text: SKM 145 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
IGBT SKM 145 GB 063 DN
M145GB063DN
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Semikron SKM 145 GB 124 DN
Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
Text: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
Semikron SKM 145 GB 124 DN
skm 40 gb 124 d
M145GB124DN
LB 124 transistor
the calculation of the power dissipation for the igbt and the inverse diode in circuits
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Untitled
Abstract: No abstract text available
Text: SKM 145 GB 128 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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T\datbl\B06-ig
bt\145
gb128d
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skm 50 gb 100 d
Abstract: No abstract text available
Text: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
skm 50 gb 100 d
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skm 195 gb 125 dn
Abstract: NPT-IGBT SKM skm195gal
Text: SKM 195 GB 063 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1
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3K7/IE32
skm 195 gb 125 dn
NPT-IGBT SKM
skm195gal
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AX-52 diode
Abstract: No abstract text available
Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& M-^9 ,M<+16 ?'<./ M3 V PR ,ZQ6 WI + V N ;< M%TX[JME%7 _ M<+1 IGBT Modules EG EG[$ M3 V PR ,ZQ6 WI +) V N ;< EG&$ +) V NQ ;<b <' Ub M^ V NRQ WI EG EG[$ M3 V PR ,ZQ6 WI +) V N ;<
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200GB173D
200GB173D1
200GAL173D
200GAR173D
AX-52 diode
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Untitled
Abstract: No abstract text available
Text: SKM 200GB173D M3 V PR WI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IX& MY V PR WI EI MY V NRQ WI NSQQ ? PPQ J M30<2 V [Q WI NRQ J OQQ J ^ PQ ? NQ b< M30<2 V PR WI NRQ J M30<2 V [Q WI NQQ J OQQ J MY V NRQ WI NcRQ J M30<2 V PR WI
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200GB173D
200GB1+
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Untitled
Abstract: No abstract text available
Text: SKM 150GB123D R3 S NT UI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IV& RW S NT UI EI RW S MTO UI MNOO ? MTO J R30<2 S YO UI MMO J NOO J ¥ NO ? MO `< R30<2 S NT UI MTO J R30<2 S YO UI MOO J NOO J RW S MTO UI MMOO J R30<2 S NT UI
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150GB123D
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f422
Abstract: No abstract text available
Text: SKM 75GD123D L3 Q RS TI9 * /2; .+824=';2 ; 23'F'25 Absolute Maximum Ratings Symbol Conditions IGBT >IU& LV Q RS TI DI LV Q NSX TI DI[$ NRXX > YS P L30;2 Q ZX TI SX P NXX P ] RX > LV Q NRS TI NX a; L30;2 Q RS TI YS P L30;2 Q ZX TI SX P NXX P SSX P NXX P E cX bbbd NSX
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75GD123D
75GD123DL
75GDL123D
f422
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 V cG R R ge = 20 lc Tease = 2 5 / 6 5 °C 190 / 150 IcM Tease = 2 5 / 6 5 °C ; tp = 1 ms 380 / 300 ±20 V ges Ptot pe r IG B T , T oase = 2 5 °C 800 - 4 0 . + 1 5 0 1 2 5 )
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 1200 380 / 300 760 / 600 ± 20 1650 -4 0 . +150 125) 2500 V cE S V cG R lc IcM = 20 Toase = 25/65 °C Toase = 25/65 °C; tp = 1 ms R ge V ges Ptot Tj, (Tstg) Vsol humidity climate
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