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    SKM 75 GAL 123 IGBT Search Results

    SKM 75 GAL 123 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SKM 75 GAL 123 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040


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    SKM 75 GAL 123 IGBT

    Abstract: skm 200 GB 12 V SKM 300 GB 12 V semikron skm 300 gar 123 SKM 300 CIRCUIT GAL 200 gb semikron skm 150 gal skm 125 ga 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


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    SKM 75 GAL 123 IGBT

    Abstract: SKM 600 gb skm 40 gb 123 d
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    SKM 75 GB 123

    Abstract: semikron skm 150 gal SKM 75 GAL 123 IGBT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    SKM 75 GAL 123 IGBT

    Abstract: SKM 75 GB 123 SKM 380 skm 50 gb 100 d Semitrans* IGBT GAL 200 gb
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = 25/80 °C


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    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


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    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


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    SKM 75 Gb 124 IGBT

    Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
    Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON


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    Semitrans M SKD 100 GAL

    Abstract: skm 50 gd 123 d SKM 75 GAL 123 IGBT SKM 25 GD semikron skd 60 Semitrans M SKD diode for piv 11v Semitrans inverter rectifier ic 747 skm 50 gb 100 d
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) 1200 1200 100 / 90 200 / 180 ± 20 per IGBT/D1/D8, Tcase=25 °C 690 / 125 / 125 – 40 . . .+150 (125) AC, 1 min.


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    752tic Semitrans M SKD 100 GAL skm 50 gd 123 d SKM 75 GAL 123 IGBT SKM 25 GD semikron skd 60 Semitrans M SKD diode for piv 11v Semitrans inverter rectifier ic 747 skm 50 gb 100 d PDF

    semikron skm 150 gb 123

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040


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    SKM 75 GAL 123 IGBT

    Abstract: semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040


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    75GD123D SKM 75 GAL 123 IGBT semikron SKD 75 gal Semitrans M SKD 100 GAL B6U 380 Semitrans M SKD brake chopper b6u 500 semikron semikron skd 75 semikron skd skd75 PDF

    Semitrans M SKD 100 GAL

    Abstract: SKM 75 GAL 123 IGBT skd 75 ic 747 Semitrans M SKD igbt sixpack semikron skd 100 SKM75GD123D b6u 500 semikron semikron SKD 75 gal
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040


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    SKM 75 GAL 123 IGBT

    Abstract: SKM 300 CIRCUIT GB-123 skm 50 gd 123 d GB173 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400
    Text: s e MIKROn Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower V c E s a t, soft and fast CAL diodes1*; Preliminary Data 4 Type Rthjc VcEsat RthCH Case Circuit 4) Tc lc Tea» Modul =25°C 25°C 25°C underdevelopment


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    GA123 GB123 GB173 SKM300GB SKM 75 GAL 123 IGBT SKM 300 CIRCUIT GB-123 skm 50 gd 123 d 1700V-Types GAL 700 SKM 25 GD SKM100GB173 skm400 PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms


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    75AFC

    Abstract: L56A b644 us25x
    Text: s e m ik r d n A b s o l u t e M a x im u m R a t in g s Sym bol C onditions ' V ets VcGR lc IcM R ge = 20 k ii Tcase= 25/80 °C Tcase= 25/80 °C; tp — 1 ms V ges Ptot per Tj, Tag Visoi humidity climate IGBT, Tcase= 25 °C AC, 1min. D1N 40 040 DINIEC68T.1


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    DINIEC68T se--25/80 B6-46 75AFC L56A b644 us25x PDF

    semikron SKm GAL 123D

    Abstract: CASED61
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm


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    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode


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    Semitrans M SKD 100 GAL

    Abstract: b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT
    Text: s e MIKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tag Visol humidity climate Diodes 9) If IfM= - ICM Ifsm l2t Values Conditions ' Units Rge = 20 kQ Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min.


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    m100gb12 xls-24 Semitrans M SKD 100 GAL b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT PDF

    Semikron SKM 173D

    Abstract: SK 200 GAR 125 SKM200GB173 B679
    Text: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi


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    SKM 200 CIRCUIT

    Abstract: B 688
    Text: se MIKRDn Absolute Maximum Ratings Symbol VcES VcGH lc IcM V qes Ptot Tj. Tstg Visol humidity climate V a lu e s | . 1 2 3 D 1 Conditions ' . 123 D 1200 1200 200/150 400/300 ±20 1250 - 4 0 . . .+150(125) 2 500 71 Class F 55/150/56 FWD6) 260/180 200/130


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    IEC68T SKM 200 CIRCUIT B 688 PDF

    skm150gb123d

    Abstract: semikron IGBT 100A SKM 75 GAL 123 IGBT SKM150GB123
    Text: SEMI KRÖN Absolute Maximum Ratings Sym bol VcES VcGR lc V a lu e s C onditions 1 Units 1200 1200 150 '100 300 / 200 ±20 800 - 4 0 . . .+150 125 2 500 7) Class F 55/150/56 Rge = 20 k£i Tease = 25/80 X Tease = 25/80 X ; tp = 1 ms ICM Vges Plot T|, (Tjtg)


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    IEC68T SKM150GB123D semikron IGBT 100A SKM 75 GAL 123 IGBT SKM150GB123 PDF

    VQE 23D

    Abstract: 6tv0 skm 40 gb 123 d
    Text: se MIKROn Absolute Maximum Ratings Sym bol C onditions ' V ce S Vcon lc Icm V qes R ge - 20 kQ Tease = 25/80 C Tease = 25/80 “C; tp — 1 ms Plot Tj, Tstg Visot humidity climate per IG BT , Tease = 25 °C AC, 1 min. DIN 4 0 0 4 0 DIN I E C 6 6 T . 1 Inverse Diode


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    5d4 diode

    Abstract: Semitrans M SKD 100 GAL SKM 75 GAL 123 IGBT b6u 500 semikron M0400 Semitrans M SKD
    Text: s e MIKRO n Absolute Maximum Ratings Symbol Units V cE S lc = 20 k£2 Tease = 25/80 °C ICM Tease = 25/80 °C; tp = 1 ms V cG R Rge V ges Ptot Tj, Tstg Visol humidity climate per IGBT/D1/D8, Tcase=25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 I f M= - IcM


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