SPP70N05L
Abstract: Q67040-S4000-A2 sl diode
Text: BUZ 100 SL Preliminary data SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 SL
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SPP70N05L
O-220
Q67040-S4000-A2
04/Nov/1997
SPP70N05L
Q67040-S4000-A2
sl diode
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SPP70N05L
Abstract: Q67040-S4000-A2
Text: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP70N05L
O-220
Q67040-S4000-A2
30/Jan/1998
SPP70N05L
Q67040-S4000-A2
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BUZ100
Abstract: smd diode code A Q67040-S4000-A2 SPP70N05L
Text: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP70N05L
O-220
Q67040-S4000-A2
30/Jan/1998
BUZ100
smd diode code A
Q67040-S4000-A2
SPP70N05L
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BLV101A
Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
Text: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.
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Original
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SC08b
LLE18010X
LLE18040X
LLE18150X
BGY1816
LFE18500X
BLV101A
BLX94
BLV101B
BLW91
BFR96S
BFR96S equivalent
rf bipolar transistor application notes philips
BGY19
LLE18010X
BLV99
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MDA380
Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU99
BLU99/SL
BLU99
OT122A)
BLU99/SL
MDA380
4312 020 36642
MDA385
TRANSISTOR SL 100
"2222 352"
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Diode sl
Abstract: Q67040-S4012-A2 SPP20N05L 450uH
Text: BUZ 101 SL Preliminary data SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 101 SL
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Original
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SPP20N05L
O-220
Q67040-S4012-A2
04/Nov/1997
Diode sl
Q67040-S4012-A2
SPP20N05L
450uH
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transistor buz 350
Abstract: Q67040-S4004-A2
Text: BUZ 110 SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP80N05L
O-220
Q67040-S4004-A2
28/Jan/1998
transistor buz 350
Q67040-S4004-A2
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BUZ102
Abstract: Q67040-S4010-A2 SPP47N05L SMD SL
Text: BUZ 102 SL SPP47N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP47N05L
O-220
Q67040-S4010-A2
30/Jan/1998
BUZ102
Q67040-S4010-A2
SPP47N05L
SMD SL
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Q67040-S4006-A2
Abstract: SPP13N05L spp13n
Text: BUZ 104 SL Preliminary data SPP13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 104 SL
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Original
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SPP13N05L
O-220
Q67040-S4006-A2
04/Nov/1997
Q67040-S4006-A2
SPP13N05L
spp13n
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Q67040-S4004-A2
Abstract: 110SL transistor buz 19 transistor buz 350 Semiconductor Group 1997
Text: BUZ 110 SL Preliminary data SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 110 SL
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Original
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SPP80N05L
O-220
Q67040-S4004-A2
04/Nov/1997
Q67040-S4004-A2
110SL
transistor buz 19
transistor buz 350
Semiconductor Group 1997
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Q67040-S4008-A2
Abstract: SPP28N05L Transistor Data sl 103
Text: BUZ 103 SL Preliminary data SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 SL
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Original
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SPP28N05L
O-220
Q67040-S4008-A2
04/Nov/1997
Q67040-S4008-A2
SPP28N05L
Transistor Data sl 103
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Q67040-S4008-A2
Abstract: SPP28N05L EAS120
Text: BUZ 103 SL SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP28N05L
O-220
Q67040-S4008-A2
30/Jan/1998
Q67040-S4008-A2
SPP28N05L
EAS120
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SPP47N05L
Abstract: Q67040-S4010-A2 buz102sl
Text: BUZ 102 SL Preliminary data SPP47N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 102 SL
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Original
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SPP47N05L
O-220
Q67040-S4010-A2
04/Nov/1997
SPP47N05L
Q67040-S4010-A2
buz102sl
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PDF
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Q67040-S4012-A2
Abstract: SPP20N05L sl diode
Text: BUZ 101 SL SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP20N05L
O-220
Q67040-S4012-A2
29/Jan/1998
Q67040-S4012-A2
SPP20N05L
sl diode
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AUIRG4BC30S
Abstract: AUIRG4BC30
Text: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant
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Original
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AUIRG4BC30S-S
AUIRG4BC30S-SL
O-262
AUIRG4BC30S
AUIRG4BC30
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Q67040-S4006-A2
Abstract: SPP13N05L
Text: BUZ 104 SL SPP13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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SPP13N05L
O-220
Q67040-S4006-A2
29/Jan/1998
Q67040-S4006-A2
SPP13N05L
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package
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AUIRG4BC30U-S
AUIRG4BC30U-SL
O-262
O-262
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C2100
Abstract: SL-7-C2100
Text: ET S - SL-5-C2100-/ / SL-7-C2100 * y Dual 100-Bit Static Shift Registers FEATURES • ■ ■ ■ ■ ■ T T L/D T L C om patible C lock in p u t T T L/D T L C om patible Data— N o external interfa cin g com ponents required on data inputs o r outputs.
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OCR Scan
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SL-5-C2100-/
SL-7-C2100
100-Bit
SL-5-C2100
SL-7-C2100
C2100
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BC337 BC547
Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150
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OCR Scan
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bSD113Q
2N4032
2N6554
BT2907A
PN2907A
PN3645
PN4249
PN4250A
PN4355
TN2905A
BC337 BC547
BC182 BC547
BC547 surface mount
T0-92
TN2905A
BC237
2n5962
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PDF
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ltaft
Abstract: No abstract text available
Text: 1DI75F-100 75a : Outil ne Drawings POWER TRAN SISTO R MODULE • Features • ¡SW7± High Voltage • 7 U —+"<ij KrtiSE • ASO ^/SL' • ifeiffl? Including Free W heeling Diode Excellent Safe Operating Area Insulated Type - % IA M H N o . l l D e q u i » « l |
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OCR Scan
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1DI75F-100
E82988
I95t/R89)
ltaft
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PDF
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131S
Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
Text: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60
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OCR Scan
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sdt7413
sdt7414
sdt7415
sdt7416
sdt7417
sdt7418
sdt7419
sdt9001
sdt9002
sdt9003
131S
2N3026
15149
sdt8004
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PDF
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SL 100 NPN Transistor
Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE
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OCR Scan
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THC-2484
THC-4123
THC-4124
THC-4125
THC-4126
THC-40D4
THC-40D5
THC-41D4
THC-41D5
SL 100 NPN Transistor
bc337-40 npn transistor
transistor TE 901
Transistor BC239c
SL 100 power transistor
of transistor sl 100
Transistor BC413C
TRANSISTOR SL 100
te 901 pnp Transistor
sl 100 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
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OCR Scan
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bbS3T31
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
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PDF
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122d
Abstract: BLU98 ON4612 sot37 172d BLV100
Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7
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OCR Scan
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BFR90A
BFG90A
BFR91A
BFG91A
BLU98
BLV90
BLT80
BLT81
BLV90/SL
BLV91/SL
122d
ON4612
sot37
172d
BLV100
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