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    SL44 DIODE Search Results

    SL44 DIODE Result Highlights (5)

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    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SL44 DIODE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS Technical Data Data Sheet N1538, Rev. - SL42-SL44 Green Products SL42-SL44 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • •


    Original     		N1538, SL42-SL44 SL42-SL44 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42-M3, SL43-M3, SL44-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		SL42-M3, SL43-M3, SL44-M3 J-STD-020, DO-214AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42, SL43, SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, DO-214AB AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42 thru SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, AEC-Q101 DO-214AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42 thru SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, AEC-Q101 DO-214AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SL440

    Abstract: SL43M
    Text: SL42 thru SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, DO-214AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SL440 SL43M PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42, SL43, SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, DO-214AB AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42 thru SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, DO-214AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL42 thru SL44 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop


    Original     		J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AB 11-Mar-11 PDF

    si4800

    Abstract: LM431AIM3 EPCOS 3650 DPA424R PC357N1T B540C BAV19WS DI-37 SL44 design of line frequency inductor and transformer
    Text: Design Idea DI-37 DPA-Switch 16.5 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA424R 16.5 W 36-75 VDC 3.3 V Forward Sync. Rec. Design Highlights • • • • • voltages and linearly reduces the maximum duty cycle with


    Original     		DI-37 DPA424R si4800 LM431AIM3 EPCOS 3650 DPA424R PC357N1T B540C BAV19WS DI-37 SL44 design of line frequency inductor and transformer PDF

    LM431AIM3

    Abstract: Si4800 Forward Transformer Design design of line frequency inductor and transformer EPCOS 3650 B540C BAV19WS DI-37 PC357N1T SL44
    Text: DI-37 Design Idea DPA-Switch 16.5 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA424RN 16.5 W 36 – 75 VAC 3.3 V Forward Sync. Rec. Design Highlights • Low cost • 400 kHz synchronous rectification design


    Original     		DI-37 DPA424RN DI-37 LM431AIM3 Si4800 Forward Transformer Design design of line frequency inductor and transformer EPCOS 3650 B540C BAV19WS PC357N1T SL44 PDF

    lnk616pg

    Abstract: LinkSwitch-II EE16 LNK61 switching time 1N4007 t1 ee16 EE16 10 pin horizontal bobbin diode 1N4007 specifications TOPSWITCH battery charger lnk616
    Text: DI-158 Design Idea LinkSwitch-II 5 W Charger/Adapter Application Device Power Output Input Voltage Output Voltage Topology Charger/Adapter LNK616PG 5W 85 – 265 VAC 5V Flyback Design Highlights • Revolutionary control concept enables very low cost, low partcount solution


    Original     		DI-158 LNK616PG DI-158 lnk616pg LinkSwitch-II EE16 LNK61 switching time 1N4007 t1 ee16 EE16 10 pin horizontal bobbin diode 1N4007 specifications TOPSWITCH battery charger lnk616 PDF

    1N5822 SMD

    Abstract: 1N5822 SMD data sheet download smd package 1N5819 1N5820 SMA MELF GLASS Schottky Blue DO-213AB GLASS Schottky Blue 1N5822 smd diode 1n5819 smd 1N5822 SMc 1N5817 SPICE
    Text: N E Isolated TO-220 Schottky Rectifiers W P R Part Number Definition Recommended Mounting Techniques ITO-220 Introduction Applications Product Features Schottky Rectifiers Selector Chart Product Specifications Summary Cross Reference Isolation Voltage Case Outlines


    Original     		O-220 ITO-220 MBRF10xx MBRF16xx ITO-220AC ITO-220AB 1N5822 SMD 1N5822 SMD data sheet download smd package 1N5819 1N5820 SMA MELF GLASS Schottky Blue DO-213AB GLASS Schottky Blue 1N5822 smd diode 1n5819 smd 1N5822 SMc 1N5817 SPICE PDF

    power supply dvd player LG

    Abstract: LNK626PG B49 diode smd B34 SMD ZENER DIODE lnk624pg core EEL16 transformer LNK623PG smd DIODE B34 EE16 429 FR104 diode
    Text: Application Note AN-45 LinkSwitch-CV Family Design Guide Introduction The LinkSwitch-CV family is a highly integrated monolithic switching IC designed for off-line power supplies up to 17 W. Ideally suited for DVD player and Set-top box applications, LinkSwitch-CV provides constant voltage without using an


    Original     		AN-45 power supply dvd player LG LNK626PG B49 diode smd B34 SMD ZENER DIODE lnk624pg core EEL16 transformer LNK623PG smd DIODE B34 EE16 429 FR104 diode PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF