VOLTAGE LEVEL RELAY SM 125 230
Abstract: SM 125 230 SM 115 024 VOLTAGE LEVEL RELAY SM 125 724 relay SM-125 VOLTAGE LEVEL RELAY SM 125 024 VOLTAGE LEVEL RELAY SM 115 230 SM115024 SM 115 SM115115
Text: Current and Voltage Controls 1-Phase AC/DC Voltage - AC Current Control Types SM 115, SM 125 • AC/DC voltage/current control relay • Current measuring range: 0.5 - 500 AAC through current metering transformer • Voltage measuring range: 0.4 - 500 VAC/DC, divided
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VOLTAGE LEVEL RELAY SM 125 230
Abstract: spdt ac relay of 5 pins SM 125 230 SM 230 SM 115 VOLTAGE LEVEL RELAY SM 115 230 SM 115 024 SM 125-724 HF relay power supply 24 volt
Text: Current and Voltage Controls 1-Phase AC/DC Voltage - AC Current Control Types SM 115, SM 125 • AC/DC voltage/current control relay • Current measuring range: 0.5 - 500 AAC through current metering transformer • Voltage measuring range: 0.4 - 500 VAC/DC, divided
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IP20B
Abstract: Diode SJ Transistor SJ VOLTAGE LEVEL RELAY SM 125 230 PE Relay sj 45 3 volt latching relay 115150MV VOLTAGE LEVEL RELAY SM 125 024 VOLTAGE LEVEL RELAY SM 125 724
Text: Current and Voltage Controls 1-Phase DC Current Control Type SJ 115 • DC current control relay with absolute mV-scale for use with external standard shunt • Scale indication in absolute mV scale, measuring range: 10 - 150 mV • Knob-adjustable voltage level
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Abstract: No abstract text available
Text: Current and Voltage Controls 1-Phase DC Current Control Type SJ 115 • DC current control relay with absolute mV-scale for use with external standard shunt • Scale indication in absolute mV scale, measuring range: 10 - 150 mV • Knob-adjustable voltage level
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12 volt 5 pin relay
Abstract: star delta wiring diagram star delta control wiring diagram star delta control diagram star delta wiring star delta diagram motor star delta wiring diagram with timer star delta timer star delta circuit diagram star delta diagram
Text: Timers Star-Delta Control Relay Type S 115 • 4 selectable time ranges: 0.15 s to 800 s • Automatic start • Knob-adjustable time within range • Fixed delay between star and delta output • Oscillator-controlled time circuit • Repeatability deviation: ≤ 1%
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carlo gavazzi SM 125 230
Abstract: No abstract text available
Text: Timers Interval Types SC 210, SC 215 • One shot at supply on and/or supply off • Automatic start • SC 210: Fixed pulse duration: 0.5 s • SC 215: Knob-adjustable time pulse duration: 0.15 - 3 s • Output: 8 A DPDT relay • Plug-in type module • S-housing
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two-state relay
Abstract: carlo gavazzi SM 125 230 SG125230
Text: Timers Two-state Relay Type SG 125 • Two-state relay with built-in memory • Time ranges: 0.15 s to 3 s • Switches, with a preset delay, to opposite contact position at power supply interruption • Repeatability deviation: ≤ 1% • Output: 8 A SPDT relay
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firs50
two-state relay
carlo gavazzi SM 125 230
SG125230
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68230A
Abstract: pal16v8q PAL16R8ACN 99029 PAL16V8Q-15JC4 PAL16V8Z AM993 17640 8253 amd thermal analysis on pcb
Text: 9/5/01 PKG. TYPE CD 016 PD 016 PD 016 CD 020 CD 020 CD 020 CD 020 CD 020 PD 020 PD 020 Page 1 Thermal Resistance Analysis Update LD. FRM. NUMBER 18543 405 563 461 480 480 480 18550 590 590 X PAD DIM. MILS 167 140 150 127 160 160 160 167 150 150 MSD Advanced Assembly Technology
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74015A
7713A
67711C
7714A
7411Y
4196B
AMC67401
AM7940-125
67401N
PAL16V8Z
68230A
pal16v8q
PAL16R8ACN
99029
PAL16V8Q-15JC4
PAL16V8Z
AM993
17640
8253 amd
thermal analysis on pcb
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12 Volt DPDT Relay
Abstract: SPDT relay 12 Volt 230 volt ac overvoltage protection relay 5 volt relay 12 volt DPDT RELAY relay 24 volt 12 volt spdt relay SPDT relay WITH 12 VOLT INPUT SUPPLY 12 Volt DPDT Relay small
Text: Proximity Sensors Inductive Namur Amplifier Relays Types SD 110, SD 210, SD 270 • According to DIN 19 234 • SD 110/210: Amplifier with relay output • SD 270: Set/reset amplifier with relay output for 2 proximity switches • Power supply to proximity switch 8.2 VDC/1 kΩ
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Abstract: No abstract text available
Text: Timers Duty Recycler Type SC 255 • Time ranges: 0.15 s to 600 s • Automatic start ON- or OFF-time period first • Knob-adjustable duty cycle (ON/OFF ratio) • Fixed time cycles • Oscillator-controlled time circuit • Repeatability deviation: ≤ 1%
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Abstract: No abstract text available
Text: Timers Delay on Release Type SB 135 • Time ranges: 0.15 s to 180 h • Automatic start after drop-out of power supply • Knob-adjustable time within range • Oscillator-controlled time circuit • Repeatability deviation: ≤ 1% • Output: 8 A SPDT relay
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PED relay
Abstract: No abstract text available
Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible
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PED relay
Abstract: VOLTAGE LEVEL RELAY SM 125 230 SJ 155 Diode SJ sj 45 Transistor SJ relay 12 volt 6a 100MA RELAY PE Relay SJ 02
Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible
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Abstract: No abstract text available
Text: Current and Voltage Controls 1-Phase AC Current Control Type SJ 175 • AC current control relay • For AC standard current transformers • Current measuring range: . A/1 AAC or . A/5 AAC • Knob-adjustable current level • Latching at set level possible
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VOLTAGE LEVEL RELAY SJ 185 724
Abstract: VOLTAGE LEVEL RELAY SM 125 230 potentiometer 230 Transistor SJ 230 v relay SJ185 Diode SJ 24-VAC relay 9 volt voltage metering
Text: Current and Voltage Controls 1-Phase AC/DC Voltage Control Types SJ 135, SJ 185 • Voltage metering relay with absolute scale • Measuring ranges: SJ 135: 12 mV - 500 VDC divided into 10 ranges SJ 185: 20 mV - 500 VAC divided into 8 ranges • Knob-adjustable set point
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135/SJ
VOLTAGE LEVEL RELAY SJ 185 724
VOLTAGE LEVEL RELAY SM 125 230
potentiometer 230
Transistor SJ
230 v relay
SJ185
Diode SJ
24-VAC
relay 9 volt
voltage metering
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Untitled
Abstract: No abstract text available
Text: m/VEREX QRE2412001 120 Amp/Phase Preliminary Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 3 Phase Diode Bridge Module 120 Amp/Phase Up to 2400 Volts Description: Powerex 3 Phase Diode Modules are designed for use in applications
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QRE2412001
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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trw 1014
Abstract: No abstract text available
Text: O K I Semiconductor MSM511665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/ AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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MSM511665A/AL
536-Word
16-Bit
MSM511665A/
16-bit.
MSM511664A/AL
cycles/32ms
trw 1014
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Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor M SM 511664A/AL_ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/A L is a 65,536-word x 16-bit dynam ic RAM fabricated in OKI’s CM O S silicon gate technology. The M SM 511664A/A L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single metal CM OS. The M SM 511664A /A L is
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MSM511664A/AL_
536-Word
16-Bit
MSM511664A/AL
40-pin
44/40-pin
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Untitled
Abstract: No abstract text available
Text: SMF-24030 - ELECTRO NICS POW GT O p tÌlflÌZ G d Sam sung M icrow ave Sem ico nd ucto r GaAs FET 2-10 GHz Description Features The SM F-24030-200 is a packaged version of the S M F24000-200. The chip is a 2400 nm n-channei M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s power
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SMF-24030
F-24030-200
F24000-200.
F-24000-200
SMF-24030
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ah rzj
Abstract: MSM511002-10 MSM511002-12
Text: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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CI11SI
MSM511002RS/JS/ZS
576-WQRD
MSM511002
18-pin
MSM511002-10
MSM511002-12
ah rzj
MSM511002-10
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511664A/AL_ 65,536-Word x 16-Bit DYN AM IC RAM : FAST PAGE M O D E TYPE BYTE WRITE D E S C R IP T IO N The MSM511664A/AL is a 65,536-word x 16-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM511664A/AL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511664A/AL is
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MSM511664AL
536-Word
16-Bit
MSM511664A/AL
40-pin
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ca0005
Abstract: 800T-N YA3450N CA0015 lm 78 H 12 k
Text: ndex 58FCP . . 173 AR0001 . .85 AR0004 . .85
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58FCP
AR0001
AR0004
ca0005
800T-N
YA3450N
CA0015
lm 78 H 12 k
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OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
Text: ABOWEI n r r y /^ B i i ij Products BOWEI IN TEG RA TED C IR C U IT S C O .,LTD 2 0 0 7 .5 A bow ei BOWEI is one ofthe leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and manufacturing
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12000-square-meter
IS09000-2000,
Min15
MXF3200
MXF3200A
12WCMXF3200)
6WCMXF3200A)
OX36D-S-MR-R
dox5
18M08
transistor z7m
st z7m
Bowei Integrated Circuits
oxln50d
TXM11
tt 2246
transistor K117
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