TGA4040
Abstract: TGA4031-SM 5V amplifier
Text: Not Recommended for New Designs Advance Product Information December 11, 2006 17 - 35GHz MPA/Multiplier TGA4040SM TriQuint Recommends the TGA4030-SM or TGA4031-SM be used for New Designs Key Features • • • • • • Frequency: 17 - 35 GHz 22 dB Nominal Gain @ Mid-band
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35GHz
TGA4040SM
TGA4030-SM
TGA4031-SM
TG4040SM
TGA4040
5V amplifier
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1092-01A-5
Abstract: VG-12 1092-01A5 Rogers 4350
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • Measured Performance 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range.
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TGA2522-SM
TGA2522-SM
TGA2522-SM,
1092-01A-5
VG-12
1092-01A5
Rogers 4350
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1092-01a-5
Abstract: 5V712
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
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TGA2522-SM
TGA2522-SM,
Feb2010
1092-01a-5
5V712
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1092-01a-5
Abstract: 5V712
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
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TGA2522-SM
TGA2522-SM,
1092-01a-5
5V712
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1092-01a-5
Abstract: 5V712
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
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TGA2522-SM
TGA2522-SM,
1092-01a-5
5V712
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1092-01A-5
Abstract: No abstract text available
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
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TGA2522-SM
TGA2522-SM
TGA2522-SM,
1092-01A-5
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Untitled
Abstract: No abstract text available
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • • • • 28 dBm Output Psat, 26 dBm P1dB, typical. 35 dBm Output TOI. 17 dB Typical Gain. Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
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TGA2522-SM
TGA2522-SM
TGA2522-SM,
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GRP1555C1H101JD01E
Abstract: No abstract text available
Text: Advance Product Information May 16, 2006 17 - 35GHz MPA/Multiplier TGA4040-SM Key Features • • • • • Frequency: 17 - 35 GHz 20 dB Nominal Gain @ Mid-band 18 dBm Nominal Output P1dB 2x and 3x Multiplier Function Package Dimensions: 5.0 x 5.0 x 1.1 mm
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35GHz
TGA4040-SM
TG4040-SM
TGA4040-SM
TGA4040SM
GRP1555C1H101JD01E
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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2sK2750 equivalent
Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21
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O-220SIS
BCE0017A
2sK2750 equivalent
equivalent 2sk2698 mosfet
2SK1603
2SK2996 equivalent
2SK3569 equivalent
2SK2056
2SK3565 equivalent
MOSFET 2SK1358 Transistor Guide
2SK3567 equivalent
2SJ238
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Untitled
Abstract: No abstract text available
Text: a WS128K32-XXX WHITE MICROELECTRONICS 128Kx32 SRAM M ODULE, SM D 5962-93187 & 5962-95595 FEATURES • Access Tim es of 15, 17, 20, 25, 35, 45, 55ns Commercial, Industrial and M ilita ry T em perature Ranges ■ MIL-STD-883 Compliant Devices A vaila b le 5 Vo lt Power Supply
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WS128K32-XXX
128Kx32
MIL-STD-883
WS128K32-XG2TX
S128K32-XH1X
WS128K32-XG4TX
512Kx32
66-pin,
10HYX
10HUX
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FS30ASH03
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics
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FS10ASH-03
FS10UMH-03
O-220
FS10VSH-03
O-220S
FS10KMH-03
O-220FN
FS30ASH-03
FS30UMH-03
FS30ASH03
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J20S
Abstract: SM5828P 5828B
Text: fUPC SM5828B 8-bit Advanced Shift Register NIPPON PRECISION CfRCWTS INC. • OVERVIEW The SM5828B is a varia&le-length 8-bit shift register fabricated using NPC's original molybdenum-gate CMOS technology. The external input pins of the TC allow 1 to 128-step shift register settings. The
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SM5828B
SM5828B
128-step
28-pin
16-bit
5828B)
J20S
SM5828P
5828B
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T70 N03 412
Abstract: FS70SM FS10UM-2
Text: S h o r t F o rm D 3 t3 Powerex, Inc., 200 H lllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C
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O-220
O-220S
T0-220FN
FS10AS-2
FS10UM-2
FS10VS-2
FS10KM-2
72R4L
T70 N03 412
FS70SM
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RM2507M
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS » Ä Ä iä L S PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE RANGE : -55 °C to + 1 7 5 ”C jjiiu&friftlgSit._ TYPE M axim um Average Rectified Current @ Half W ave Resistive Load 60Hz lo@ Tc Maxim um Peak
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OCR Scan
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DO-201
DO-41
Q007L
RM2507M
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Untitled
Abstract: No abstract text available
Text: Whp% H E W L E T T WÜKM P A C K A R D 17.7-32 GHz A m plifier F ea tu res HM M C-5032 • 2 2 dB m O u tp u t P .icjB • 8 dB G a in • 50 H I n p u t/O u tp u t M a tc h in g • S m a ll Size • B ias: 4.5 V olts, 250 m A Chip Size: Chip Size Tolerance:
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C-5032
HMMC-5032
HMMC-5040
HMMC-5618
HMMC-5032/rev
HMMC-5040
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) b it N A N D E le c tric a lly Erasab le and
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TC58128DC
128-MBIT
TC58128
528-byte
FDC-22A
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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db3 c502
Abstract: st DB3 C502 8570A
Text: COMMUNICATION CONTROLLER TC8570AP/AF Universal Asynchronous R/T 1. GENERAL DESCRIPTION In m icro-peripherals, ¡8251 is one of the se ria l com m unication L S I which h ave a function of the U A R T. To accom plish the com m unication w ith telephone line, other circu its are needed. T h ese are baudgen erato r which gen erato r which ge n e rate s clock sig n al for com m unication ra te called baud-rate,
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TC8570AP/AF
TC8570AP/AF-26
DIP40-P-600
TC8570AP/AF-27
QFP44-P-1414F
TC8570AP/AF-28
db3 c502
st DB3 C502
8570A
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THD 0207
Abstract: No abstract text available
Text: TO SH IBA TC9293AF/AFN/AN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9293AF, TC9293AFN, TC9293AN 2 A MODULATION SYSTEM DA CONVERTER WITH ANALOG FILTER TC9293AF, TC9293AFN, TC9293AN are a 2'nd order 2-4 modulation system 1-bit DA converter with a built-in 8
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TC9293AF/AFN/AN
TC9293AF,
TC9293AFN,
TC9293AN
TC9293AN
SSOP24
SDIP24,
de-empha17
THD 0207
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AL14L4
Abstract: No abstract text available
Text: Sm all 2 0 S e rie s 10H 8, 12H 6, 14H 4, 16H 2, 1 6 C 1 , 1 0 L 8 , 1 2 L 6 , 1 4 L 4 , 1 6 L 2 Small 20 Series STANDARD INPUTS P AL10H 8 P AL12H 6 P AL14H 4 P AL16H 2 PAL16C1 PAL10L8 PAL12L6 P AL14L4 P AL16L2 10 12 14 16 16 10 12 14 16 OUTPUTS POLARITY 8
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AL10H
AL12H
AL14H
AL16H
PAL16C1
PAL10L8
PAL12L6
AL14L4
AL16L2
20-pin
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PDF
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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Untitled
Abstract: No abstract text available
Text: DS2143/DS2143Q DALLAS SEMICONDUCTOR FEATURES • E1/ISDN-PRI framing transceiver • Frames to CAS, CCS, and CRC4 formats • Parallel Control Port • Onboard two frame elastic store slip buffer D S 2 1 4 3 /D S 2 1 4 3 Q E1 C ontroller PIN ASSIGNMENT TCLK c 1
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DS2143/DS2143Q
DS2141AT1
40-pin
44-pin
DS2143Q)
DS2143
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