led flashlight
Abstract: sm power3 SGOLD3
Text: Pr oduc t Br ief P M B 6 821 SM -Power3 - Highly Integrated Power Ma nagement Units fo r Feature Rich Mobile De vi ces S M - P O W E R 3 extends the SM-Power family with a new highly integrated power management IC. It is optimized to support mobile devices
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B134-H8836-X-X-7600
led flashlight
sm power3
SGOLD3
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Untitled
Abstract: No abstract text available
Text: Master Catalog EL9020 Series Hardened 10/100/1000BASE-TX to Gigabit SFP Media Converter ITS Wide Temp Value UL508 SFP socket lexible for Gigabit iber optic expansion Harsh environment design and supports auto 10/100/1000BASE-T Ethernet transmission Speciic design for industrial communication applications with
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EL9020
10/100/1000BASE-TX
UL508
10/100/1000BASE-T
UL508
IEC61000-6-2
1000Mbps-Full-duplex,
ISO9001
48VDC
100pps
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UV 111A
Abstract: heidenhain power supply manual HEIDENHAIN HEIDENHAIN EnDat 2.1 rod+323+heidenhain
Text: Inverter Systems for HEIDENHAIN Controls Information for the Machine Tool Builder January 2015 HEIDENHAIN inverter systems The inverter systems from HEIDENHAIN are suitable for the HEIDENHAIN controls with digital speed control. They are designed for operating the synchronous and asynchronous
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040-A,
UV 111A
heidenhain power supply manual
HEIDENHAIN
HEIDENHAIN EnDat 2.1
rod+323+heidenhain
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Untitled
Abstract: No abstract text available
Text: 10/100/1000Base-TX to Gigabit SFP Hardened Media Converter EIR-G-SFP-T PRODUCT FEATURES • • • • • • • • • • • • The EIR-G-SFP-T, Gigabit Ethernet media converters are designed to operate in harsh environments. The EIR-G-SFP-T functions at
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10/100/1000Base-TX
1000Base
RJ-45
150KHz,
IEC60068-2-27
IEC60068-2-32
281ft.
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Untitled
Abstract: No abstract text available
Text: Agilent 83433A 10 Gb/s Lightwave Transmitter Agilent 83434A 10 Gb/s Lightwave Receiver Product Overview 83433A 83434A • Excellent 10 Gb/s and 2.5 Gb/s optical waveforms • Modulate at data rates from 2.4 to 10.7 Gb/s • Generates STM-64/OC-192 and STM-16/OC-48 compliant eye
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3433A
3434A
STM-64/OC-192
STM-16/OC-48
3434A-106,
3434A-H31
5968-9251E
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MCP79MXT-B3
Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE
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ISL10
ISL11
MCP79MXT-B3
ISL6258A
ti c3931
u9701
rtl8211* Reference design
L6703
C3931
88E1116R
FW643E
CS4206A
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Untitled
Abstract: No abstract text available
Text: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC7200S
power33
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SOT500AA1
Abstract: MOA2 IC 4822 S3001 CA94088-3409 ICS3001 R1211
Text: CHIP CARD MODULES ADDENDUM SL1 MOA2 S30 Contactless Chip Card Module Specification Product Specification Revision 1.0 PUBLIC Philips Semiconductors July 2001 Contents Rev. 1.0 2001-07-13 Contents 1 General
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SCB52
SOT500AA1
MOA2
IC 4822
S3001
CA94088-3409
ICS3001
R1211
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lad1 12vdc
Abstract: 26L531 sil 1162 pal 011 A SPEAKER OUTPUT IC 3000V diode sdm lf-h80p KI 2222A VT6301S PCT303a W83L950
Text: SERVICE MANUAL FOR 8011 BY: Ally Yuan Repair Technology Research Department /EDVD Oct.2004 8011 N/B Maintenance Contents 1. Hardware Engineering Specification ………………………………………………………………… 1.1 1.2 1.3 1.4 1.5 1.6
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JO501
ESD41A/NA
7535S-15G2T-05
SYN7535S
33P/NA
316685400004/ASSY
lad1 12vdc
26L531
sil 1162
pal 011 A SPEAKER OUTPUT IC
3000V diode sdm
lf-h80p
KI 2222A
VT6301S
PCT303a
W83L950
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Untitled
Abstract: No abstract text available
Text: FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC8360L
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Untitled
Abstract: No abstract text available
Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC8321L
FDMC8321L
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Untitled
Abstract: No abstract text available
Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description ̈ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC8321L
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Untitled
Abstract: No abstract text available
Text: FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS on = 4.3 mΩ at VGS = 10 V, ID = 18 A Termination is Lead-free This N-Channel MOSFET is produced using Fairchild
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FDMC86570L
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Untitled
Abstract: No abstract text available
Text: FDMC8360L N-Channel Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description Max rDS on = 2.1 mΩ at VGS = 10 V, ID = 27 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMC8360L
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oz9910
Abstract: 8258I li-ion 11.1v intel 945 motherboard schematic diagram lg r40 MOTHERBOARD CIRCUIT diagram 8258D mitac bios 8258i intel 945 ich7 family motherboard ICS9lpr310 schematic intel chipset 945 motherboard
Text: SERVICE MANUAL FOR 8258I BY: Sanny Gao Technical Maintenance Department /GTK MTC Jun.2006 / R01 8258I N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction …………………………………………………………………………………………………………….
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8258I
8258I
F041-SINGLE
945GM
W83L951G
oz9910
li-ion 11.1v
intel 945 motherboard schematic diagram
lg r40 MOTHERBOARD CIRCUIT diagram
8258D
mitac bios 8258i
intel 945 ich7 family motherboard
ICS9lpr310
schematic intel chipset 945 motherboard
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rtm875t-606
Abstract: G546B2 SCK 054 VARISTOR G546B2 MOSFET realtek rts5158 VARISTOR SCK 058 varistor sck 083 NS892405 intel G41 MOTHERBOARD crb SCK VARISTOR 083
Text: 5 4 3 2 1 MA8 BLOCK DIAGRAM X'TAL 14.318MHz CPU Yonah/Merom D CPU THERMAL SENSOR +3.3V 479 Micro-FCPGA PG 3 +1.5V +1.05V_VCCP +VCC_CORE CPU CLK_ 200MHz CLOCK GEN GMCH CLK_ 200MHz DREFCLK_96MHz ICS9LPRS365/RTM875T-606 64pins PCIE MCH CLK_100MHz +3.3V PG 2
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318MHz
200MHz
96MHz
100MHz
ICS9LPRS365/RTM875T-606
64pins
ISL6260C
ISL6208
05VCCP
rtm875t-606
G546B2
SCK 054 VARISTOR
G546B2 MOSFET
realtek rts5158
VARISTOR SCK 058
varistor sck 083
NS892405
intel G41 MOTHERBOARD crb
SCK VARISTOR 083
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varian klystron
Abstract: varian reflex klystron klystron applications for two cavity klystron 4X150G reflex klystron varian two cavity klystron s band klystron reflex klystron klystron television
Text: TENTATIVE DATA 3K20,000LA 3K20,000LF 3K20.000LK E I T E L - M c C U L L O U G H , I nc KLYSTRO N S SAN BRUNO, • CALIFORNIA L -B A N O A M P L I F IE R S The E im a c 3 K 2 0 . 0 0 0 L A , 3 K 2 0 . 0 0 0 L F a nd 3 K 2 0 . 0 0 0 L K klystro ns are three
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000LA
000LF
000LK
000LA,
000LK
00ted
varian klystron
varian reflex klystron
klystron
applications for two cavity klystron
4X150G
reflex klystron varian
two cavity klystron
s band klystron
reflex klystron
klystron television
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TRANSISTOR ST25A
Abstract: ST25A transistor intel 4362 al microprocessor superset system design Pentium II Xeon BUT13 wintel ST25A
Text: PENTIUM II XEON PROCESSOR AT 400 AND 450 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications running on advanced 32-bit operating systems ■ Dynamic Execution micro architecture
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32-bit
TRANSISTOR ST25A
ST25A transistor
intel 4362 al microprocessor superset system design
Pentium II Xeon
BUT13
wintel
ST25A
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a114 os hen nec
Abstract: apic S15 b154 sam la 8155 intel microcontroller architecture transistor b143 e.s A15-3P a45 dc he nne Pentium II Xeon DIODE 8137 DB83
Text: PENTIUM II XEON PROCESSOR AT 400 MHZ • Binary compatible with applications running on previous members of the Intel microprocessor family ■ Single Edge Contact S.E.C. cartridge packaging technology; the S.E.C. cartridge delivers high performance
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32-bit
a114 os hen nec
apic S15
b154 sam la
8155 intel microcontroller architecture
transistor b143 e.s
A15-3P
a45 dc he nne
Pentium II Xeon
DIODE 8137
DB83
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AMD K6
Abstract: No abstract text available
Text: Preliminary Information AMDB AMD-K6-2E Embedded Processor Data Sheet Publication # 22529 Issue Date: Jan 2000 Rev: B Amendment/0 2000 Advanced Micro Devices, Inc. All rights reserved. T h e c o n te n ts of th is d o c u m e n t a r e p ro v id e d in co n n e c tio n w ith A d v a n c e d M icro
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AMD-K6-2E/350AFR
321-pin
AMD-K6-2E/333AFR
AMD-K6-2E/300AFR
AMD-K6-2E/266AFR
AMD-K6-2E/233AFR
AMD K6
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100MAS
Abstract: No abstract text available
Text: Catalog 1 3 0 7 5 1 5 Issued 9-99 M T -R J Transceivers Continued Ethernet, Token Ring, Fast Ethernet 10 Mb/s Multimode MT-RJ Transmitter/Receiver Module Product Facts • Surface mount compatible ■ Industry standard MT-RJ interface ■ Smallest optical duplex
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850nm
10BASE-FL)
100BASE-SX)
10BASE-FL
100MAS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGS1100 MGS1100 Carbon Monoxide Gas Sensor The Motorola MGS1100 carbon m onoxide CO sensor features a gas sensitive, thin film m e tal-oxid e layer over an em bedded m icro-heater, see Figure 1. The heater is used to raise the tem perature of the film to enhance its sensitivity to CO. This structure is
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MGS1100
MGS1100
90CNOM.
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W22C
Abstract: S12301DS 5133S stp520 t12m256 T12M256A-12J UPC507 MITAC PC515 GP014
Text: MODEL : 5133S Revision 02A Table of Contents page 1 Cover Sheet Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier 9 Enhance IDE & FDD Connector
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5133S
VT82C686A
1000P
2N7002
2N7002
MLL34B
SCK431CSK-1
OT23N
W22C
S12301DS
stp520
t12m256
T12M256A-12J
UPC507
MITAC
PC515
GP014
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Untitled
Abstract: No abstract text available
Text: AMDÎ1 AMD-K6 E High-Performance, AMD-K6 Embedded Processor DISTINCTIVE CHARACTERISTICS • Advanced 6-Issue RISC86 Superscalar Microarchitecture - Seven parallel specialized execution units ■ Large On-Chip Split 64-Kbyte Level-One L1 Cache - 32-Kbyte instruction cache with additional
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RISC86Â
64-Kbyte
32-Kbyte
x86-to-RISC86Â
RISC86
754-Compatible
854-Compatible
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