IG 2200 19
Abstract: No abstract text available
Text: Rectifier diodes Type Vrrm V r sm I f r u SM = V rrm If-SM / i2dt 10 m s, 10 ms, t. A V D 121 N D 121 K D 150 N 800 1200 1800 2000 800 1200 1800 2000 2800 3200 kA 360 1400 mû. 2.6 kA2s 33.8 D 255 N 1400 330 2.4 28.8 3600 420 3.7 68.5 t v, t., ir,i. 180°el
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dt61n
Abstract: dt250n DT18N td18n
Text: EUPEC MIE D • 3MD35T7 DOGDiaD STI ■ Thyristor-diode-modules for current source inverters Type Vdrm Vrrm TRM SM dv/dt cr ^ th J C yp- DIN EC 747-6 180 °el sin. ns V/flS 50 100 di/dt)cr /'i2dt tavm/Ic 10 ms, 10 ms, VJ V] max 180 °el sin. VJ = v] max vj max
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3MD35T7
dt61n
dt250n
DT18N
td18n
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dd 76 N powerblock
Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
Text: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline
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DD122S
PB50ND
B50/1
43DP9
dd 76 N powerblock
powerblock dd 82 S 800
powerblock DD 76 N 1200
PB20S
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Untitled
Abstract: No abstract text available
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It rm sm A D iode (Thyr.) kA 10 ms, J ¡2dt kA2s 10 ms, ^vj max 1,40 It sm It A V M ^ c V (T O ) V ^vj max A/°C 180° el sin ^vj max 9,8 60/85 ri ma (di/dt) or tq MS (di/dt) or V/ps DIN IEC
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34G3ET7
0GD21Ã
/M5x11Z4-1
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D1809
Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
Text: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000
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0DQ2170
D1809
2040.2590
68 4401
D1029
D1030
D1049
D1069
D1800
D452N
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Untitled
Abstract: No abstract text available
Text: ZMUIOO . Z M U 180 ^Cathode Mark 1 J Silicon Planar Zener Diodes for use in stabilizing and clipping circuits with higher power rating. — 1 The Zener voltages are graded according to the international E 12 standard. Sm aller voltage tolerances on request.
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DO-41
ZPU180.
ZMU100
ZMU120
ZMU150
ZMU180
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EUPEC DD 104 N 16
Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
Text: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el
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34Q32T?
EUPEC DD 104 N 16
EUPEC DD 105 N 16 L
EUPEC DD 31 800
EUPEC DD 600
eupec dd 76 n 1200
EUPEC DD 171 N
EUPEC DD 89
DD 85 N 1600
EUPEC DD 105 N 16
157000
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BYS 045 v 72
Abstract: BYS 045 bys 26-45 bys 27-45 DS17 BYS 26-90 BYS 21-45 bys 22-50 SCHOTTKY bys 50 BYS 045 v 75
Text: Overview Diodes in Disk Housings Rectifier Diodes Type V rrm V V rsm Ifrm sm I f SM Ji2d t IFA V M / t c V TO rT A kA A 2s A fC V m fi 10 ms, = V RR!.1 + 100 V (50V) 1) . T "v jm a x — T vj m ax R th J C ° c /w T , m ax o u tlin e °C 180° el sin
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5x103
40x10
BYS 045 v 72
BYS 045
bys 26-45
bys 27-45
DS17
BYS 26-90
BYS 21-45
bys 22-50
SCHOTTKY bys 50
BYS 045 v 75
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T 698
Abstract: No abstract text available
Text: -as" :hyris:ors "ype V drm Itrm sm Its m / ¡ 2dt ^TAVM^C V TO rT (di/dt)cr *q (dv/dt)cr Vqt Igt RthJC DIN IEC 747-6 tvj = 25 “C tvj = 25 °C 180 °el sinus V mA °C/W °c tvj max Outline Vrrm 10 ms, 10 ms, tvj max tvj max 180 °Bl sin. t,j = tvj ma, tvj =
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Untitled
Abstract: No abstract text available
Text: □ IXYS MCC60 Thyristor Module TRMS •TAVM V RRM, DRM Preliminary data V RSM V RRM V DSM V DRM V V 1700 1600 Conditions I t RMS j I f r m s T vj - T Vjm T c = 85°C ; 180° sine I t SM! I f SM l2dt T vj = T Vjm V R= 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine
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MCC60
O-240
2x100
60-16io1
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D-68623
Abstract: d 966 ixys 047
Text: □ IX Y S Advanced Technical Data Power Schottky Rectifier Symbol Test Conditions DSS10 Maximum Ratings per diode ^FRMS Tc = 135°C; rectangular, Uav t U sM = 10 ms 13 A; L d = 0.5 (50 Hz), sine = 180 |aH; TVJ = 2 5 °C; non repetitive Eas l AS = lAR VA =1.5 x VRRM; f=10 kHz; repetitive
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DSS10
10-0035B
10-0045B
O-220
D-68623
d 966
ixys 047
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SP5LFG
Abstract: sp5lf SM3f SM3F - HVCA SP5L HVCA SM3FG SP5LG
Text: HIGH VOLTAGE SURFACE MOUNT DIODES – SM & SP SERIES FIGURE 94 .160 .180 .110 .117 .101 .112 .065 .094 .204 .220 .030 .060 .008 .067 .088 .02 8.00 5.90 8.60 6.30 FIGURE 95 0.20 0.50 2.74 2.84 4.06 4.57 7° 0.61 1.65 2.13 2.85 2.05 7° 1.00 1.30 1.70 2.21 All dimensions in mm
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100mA,
250mA,
SP5LFG
sp5lf
SM3f
SM3F - HVCA
SP5L
HVCA
SM3FG
SP5LG
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SM3f
Abstract: SM3FG SP5LG sp5l SM3F - HVCA SP5S Sp5l - HVCA HV Component Associates HVCA
Text: HIGH VOLTAGE SURFACE MOUNT DIODES – SM & SP SERIES FIGURE 94 .160 .180 .110 .117 .101 .112 .065 .094 .204 .220 .030 .060 .008 .067 .088 .02 8.00 5.90 8.60 6.30 FIGURE 95 0.20 0.50 2.74 2.84 4.06 4.57 7° 0.61 1.65 2.13 2.85 2.05 7° 1.00 1.30 1.70 2.21 All dimensions in mm
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900mA
100mA,
250mA,
SM3f
SM3FG
SP5LG
sp5l
SM3F - HVCA
SP5S
Sp5l - HVCA
HV Component Associates
HVCA
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Rectifier Diode DSI 2x55 IFAVM = 2x56 A V rrm = 1200-1600 V Preliminary Data vR SM V 1300 1700 vR AM V 1200 1600 Conditions ^FRMS 'favm 'fsm TVj = Tvjm Tc =80°C; 180° sine TVJ = 45°C; :=> ° - |— 120 56 A A t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine
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2x55-12A
2x55-16A
OT-227
D-68623
DDG471Ã
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Untitled
Abstract: No abstract text available
Text: s e M IK R D N V r sm Ifrm s V rrm SEMIPACK 2 maximum values for continuous operation 450 A Ifa v V Fast Diode1* Modules (sin. 180; Tease = 85 °C; 50 H z) 220 A 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12 Symbol Conditions SKKE 301 F Preliminary data
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fll3bti71
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Untitled
Abstract: No abstract text available
Text: SEM IKRON V r sm I fr m s maximum values for continuous operation V rrm 110 A SEMIPACK 2 Fast Diode 1) Modules I fa v (sin. 180; Tease = 65 °C ; 50 Hz) 70 A V SKKD 60 F 1500 SKKD 60 F 15 1600 SKKD 60 F 16 SKKD 60 F Units 58 70 A A Tvj = 25 °C; 10 ms
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B2-11
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semikron skkt 41
Abstract: T42B SKKT 41/12E
Text: SEMIKRON V r sm V rrm dv/ SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation 75 A V drm dt)cr It a v (sin. 180; Tease = 68 °C) V V/|as V 500 400 500 48 A - - SKKH 41/04 D - 700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D
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41/12D
semikron skkt 41
T42B
SKKT 41/12E
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thyristor tt 250 n 16
Abstract: thyristor TD 25 N ot 3000 DI 210 dt61n dt250n
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
0DD21Ã
/M6x15Z4-1
thyristor tt 250 n 16
thyristor TD 25 N
ot 3000
DI 210
dt61n
dt250n
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ITT DIODE 210
Abstract: 81 210 W 20 TD92N ITT DIODE 128 dt61n dt250n IC 7476
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
/M6x15Z4-1
ITT DIODE 210
81 210 W 20
TD92N
ITT DIODE 128
dt61n
dt250n
IC 7476
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Untitled
Abstract: No abstract text available
Text: S E M IK R O N V r sm V r rm dv/ SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation 95 A V d rm dt)cr ITAV (sin. 180; Tcase = 74 °C) V V/|as V 500 400 500 60 A - - SKKH 56/04 D - 700 600 500 SKKT 56/06 D SKKT 57/06 D
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56/12D
KT05609
KT05610
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AS150A
Abstract: SKMT91 diode T-91 SKMT912
Text: SEMIKRON V r sm V r rm SEMIPACK 1 Thyristor/ Diode Modules It r m s maximum value for continuous operation (dv/ 150 A V d rm dt)cr ITAV (sin. 180 ; Tcase = 85 °C) V V/|as V 95 A 500 400 500 700 600 500 S K KT 91/06 D SKKH 91/04 D - SKKH 91/06 D SKKH 92/06 D
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SKKT92B
SKMT912)
js100
AS150A
SKMT91
diode T-91
SKMT912
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Fast Recovery Rectifier Diodes maximum values for continuous operation 30 A 47 A 72 A V r sm I fr m s V r rm IfA V (sin. 180; Tease = 85 °C; 50 Hz) 48 A SKR20 F SKR 31 F SKR 48 F V 20 A 31 A 1000 SKR 20F10 SKR 31F10 SKR 48F10 1200 SKR 20F12 SKR 31F12
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SKR20
20F10
31F10
48F10
20F12
31F12
48F12
SKR20F
SKR31F
SKR48F
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eupec rectifier
Abstract: D1809 0 280 130 037
Text: EUPEC ‘H E D Rectifier diodes Type Ifrm sm V rrm V A • !fsm 3 4 0 3 ^ 7 DDDD11D 3ST ■ UPEC / ¡ 2dt I favm / I c V TO Tt R th jc T-OItv j m a x 10 ms, 10 ms, tv, = tv, = 180 “el tv; max tvj max tvj max tv] max sin. kA A2s V mQ K/W •c A /'C Outline
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DDDD11D
eupec rectifier
D1809
0 280 130 037
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dd 76 N powerblock
Abstract: No abstract text available
Text: Rectifier Diode Modules Type V rrm Ifr m sm V A Ifsm A 10 ms, VRSM = VRRM + 100 V Jpdt IfavM / T c A2s A/°C 10ms, T vjmaXi T vjm a x *103 28,8 V TO V T‘ V] =T1v) max rT m fi T„; RfhCK T v j m ax ° c /w °C /W °c o u tlin e 180° e! sin ^ v| rr a <
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