CK 77-1 3 94V-0
Abstract: BDP 548 P6SMBJ33CA 3T260AA P4SMAJ11CA GI 1.5KE250A ddx 2050 3T180AA 3T130AA Zener diode wz 162
Text: 3T Thyristor Series MERITEK UL E223027 SMA AND AXIAL LEAD DO-41 3T PART NUMBER 3T110AA 3T130AA 3T150AA 3T180AA 3T230AA 3T260AA 3T310AA 3T350AA MARKING CODE FOR AXIAL DO-41 PACKAGE FOR SMA PACKAGE 3T110AAL 3T130AAL 3T150AAL 3T180AAL 3T230AAL 3T260AAL 3T310AAL
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E223027
DO-41
3T110AA
3T130AA
3T150AA
3T180AA
3T230AA
3T260AA
3T310AA
3T350AA
CK 77-1 3 94V-0
BDP 548
P6SMBJ33CA
3T260AA
P4SMAJ11CA
GI 1.5KE250A
ddx 2050
3T180AA
3T130AA
Zener diode wz 162
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TR13
Abstract: No abstract text available
Text: Package Details SMA Case Mechanical Drawing Lead Code: Part Marking: 4-6 Character Alpha/Numeric Code Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R2 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details SMA Case
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EIA-481-1-A
TR13
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TVS SMA CM
Abstract: BM TVS TVS BM TVS AE SMA sd marking bh SMAJ10 SMAJ10A SMAJ11 SMAJ11A SMAJ12
Text: LESHAN RADIO COMPANY, LTD. SMA TVS Transient Voltage Suppressor TVS 400W SMAJ5.0-SMAJ170A TYPE Device Working Peak Reverse Marking Voltage Code Vwm Breakdown Voltage VBR (V) SMAJ5.0 SMAJ5.0A SMAJ6.0 SMAJ6.0A SMAJ6.5 SMAJ6.5A SMAJ7.0 SMAJ7.0A SMAJ7.5 SMAJ7.5A
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0-SMAJ170A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
TVS SMA CM
BM TVS
TVS BM
TVS AE SMA
sd marking bh
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
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934 marking code
Abstract: Diode SMA marking code PB TR13 SMA marking AG Package Details - SMA
Text: Package Details - SMA Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 4-6 Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)
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10-December
EIA-481-1-A
10-March
934 marking code
Diode SMA marking code PB
TR13
SMA marking AG
Package Details - SMA
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diodes STmicroelectronics marking DBK
Abstract: STMicroelectronics DIODE marking code AE transil diode sma SMAJ15A-TR diodes STmicroelectronics marking DBQ
Text: SMAJ TRANSIL FEATURES • Peak Pulse Power : 400 W 10/1000µs ■ Stand off voltage range: From 5V to 188V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA
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diodes STmicroelectronics marking DBK
Abstract: OF IC 317 eua SMAJ15A-TR SMAJ33A-TR STmicroelectronics marking SR SMA diodes STmicroelectronics marking DBQ SMAJ st
Text: SMAJ TRANSIL FEATURES • Peak Pulse Power : 400 W 10/1000µs ■ Stand off voltage range: From 5V to 188V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline DESCRIPTION The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA
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Untitled
Abstract: No abstract text available
Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type FEATURES APPLICATIONS Forward Voltage : VF=0.59V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V ABSOLUTE MAXIMUM RATINGS
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XBS306S17R-G
ETR1616-002a
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Untitled
Abstract: No abstract text available
Text: XBS206S17R-G ETR1613-002a Schottky Barrier Diode, 2A, 60V Type FEATURES APPLICATIONS Forward Voltage : VF=0.615V TYP. Rectification Forward Current : IF(AVE)=2A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V ABSOLUTE MAXIMUM RATINGS
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XBS206S17R-G
ETR1613-002a
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Untitled
Abstract: No abstract text available
Text: XBS203V17R-G ETR1611-001a Schottky Barrier Diode, 2A, 30V Type FEATURES APPLICATIONS Forward Voltage : VF=0.35V TYP. Rectification Forward Current : IF(AVE)=2A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V ABSOLUTE MAXIMUM RATINGS
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XBS203V17R-G
ETR1611-001a
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Untitled
Abstract: No abstract text available
Text: XBS304S17R-G ETR1615-002a Schottky Barrier Diode, 3A, 40V Type FEATURES APPLICATIONS Forward Voltage : VF=0.465V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V PACKAGING INFORMATION
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XBS304S17R-G
ETR1615-002a
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Untitled
Abstract: No abstract text available
Text: XBS204S17R-G ETR1612-002a Schottky Barrier Diode, 2A, 40V Type APPLICATIONS FEATURES Forward Voltage : VF=0.485V TYP. Rectification Forward Current : IF(AVE)=2A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V ABSOLUTE MAXIMUM RATINGS
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XBS204S17R-G
ETR1612-002a
204S17
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Untitled
Abstract: No abstract text available
Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type FEATURES APPLICATIONS Forward Voltage : VF=0.355V TYP. Rectification Forward Current : IF(AVE)=3A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V ABSOLUTE MAXIMUM RATINGS
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XBS303V17R-G
ETR1614-001a
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XBS304S17R-G
Abstract: ETR1615-002a XBS30 304S17
Text: XBS304S17R-G ETR1615-002a Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS304S17R-G
ETR1615-002a
XBS304S17R-G
ETR1615-002a
XBS30
304S17
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XBS306S17
Abstract: 306S17 XBS30
Text: XBS306S17R-G ETR1616-002a Schottky Barrier Diode, 3A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.59V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=60V
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XBS306S17R-G
ETR1616-002a
XBS306S17
306S17
XBS30
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XBS206S17R
Abstract: XBS206
Text: XBS206S17R-G ETR1613-002a Schottky Barrier Diode, 2A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.615V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS206S17R-G
ETR1613-002a
XBS206S17R
XBS206
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XBS203
Abstract: No abstract text available
Text: XBS203V17R-G ETR1611-001a Schottky Barrier Diode, 2A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.35V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V
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XBS203V17R-G
ETR1611-001a
XBS203
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XBS303V17R-G
Abstract: XBS303V17R XBS30
Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS303V17R-G
ETR1614-001a
XBS303V17R-G
XBS303V17R
XBS30
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Untitled
Abstract: No abstract text available
Text: Attenuator 100 to 2000 MHz Technical Data UTF-030 Features Description Pin Configuration • 40 dB Attenuation Range UTF-030, TO-8F • AGC Circuits The UTF-030 is a thin-film voltagecontrolled RF attenuator that offers a continuously-variable attenuation of up to 30 to 45 dB
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UTF-030
UTF-030,
UTF-030
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8C443
Abstract: No abstract text available
Text: PRODUCT INFORMATION 1300nm 8C443 1550nm PIN/Preamp Datacom, Telecom This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for FDDI, ATM and SDH/Sonet up to 155 Mbps. The AGC Automatic Gain Control
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1300nm
8C443
1550nm
8C443
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AF190
Abstract: AF320 AH202 AN213 AT224 AF320 af190 marking AB204
Text: CASE STYLES OUTLINE DIMENSIONS inch mm case no. AB185 AB186 AB204 AF190 AF320 AG191 AH202 AN213 AR214 AT224 AT577 AV243 AW254 AW256 AW257 AX255 A B C D E F G H J K L M N P Q R S T wt. grams. NOTES* 4.76 3.00 .53 120.90 76.20 13.46 .150 4.610 1.500 3.81 117.09 38.10
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AB185
AB186
AB204
AF190
AF320
AG191
AH202
AN213
AR214
AT224
AF190
AF320
AH202
AN213
AT224
AF320 af190 marking
AB204
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MRA4004T3G
Abstract: 403D MRA4003T3 MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3 SMA CASE 403D-02 footprint
Text: MRA4003T3 Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features • Compact Package with J−Bend Leads Ideal for Automated Handling
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MRA4003T3
MRA4003T3/D
MRA4004T3G
403D
MRA4003T3G
MRA4004T3
MRA4005T1
MRA4005T3
MRA4006T3
MRA4007T3
SMA CASE 403D-02 footprint
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 561 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 561 Series is a thin-film RF bipolar amplifier that is protected against excessive high input power protected and stabilized for
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MRA4004T3
Abstract: MRA4004T3G MRA4007T3G 403D MRA4003T3 MRA4003T3G MRA4005T1 MRA4005T3 MRA4006T3 MRA4007T3
Text: MRA4003T3 Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted Automotive application. • Compact Package with J−Bend Leads Ideal for Automated Handling
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MRA4003T3
MRA4003T3/D
MRA4004T3
MRA4004T3G
MRA4007T3G
403D
MRA4003T3G
MRA4005T1
MRA4005T3
MRA4006T3
MRA4007T3
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diode marking r14
Abstract: MRA4004T3G MRA4007T3G Diode SMA marking code PB 403D MRA4003T3 MRA4003T3G MRA4004T3 MRA4005T1 MRA4005T3
Text: MRA4003T3 Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted Automotive application. • Compact Package with J−Bend Leads Ideal for Automated Handling
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MRA4003T3
MRA4003T3/D
diode marking r14
MRA4004T3G
MRA4007T3G
Diode SMA marking code PB
403D
MRA4003T3G
MRA4004T3
MRA4005T1
MRA4005T3
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