SMA5127

Contextual Info: SMA5127 N-channel + P-channel 3-phase motor drive External dimensions B Absolute maximum ratings Ta=25°C Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 20 V ID 4 –4 A ID(pulse) 8 (PW≤1ms, Duty≤1%) –8 (PW≤1ms, Duty≤1%) A 4 (Ta=25°C, with all circuits operating, without heatsink)

SMTO-8

Abstract: A511 CA511 SMA511
Contextual Info: Cascadable Amplifier 10 to 500 MHz A511/ SMA511 V2 Features • • • • Product Image HIGH POWER OUTPUT: +21 dBm TYP. HIGH THIRD ORDER IP3: +33 dBm (TYP.) HIGH EFFICIENCY: 52 mA (TYP.) @ +15 Vdc AVAILABLE IN BOTH TO-8 and SMTO-8 PACKAGES Description

CA51

Abstract: SMA51
Contextual Info: Cascadable Amplifier 10 to 400 MHz A51/ SMA51 V2 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.7 dB TYP. LOW VSWR <1.3:1 (TYP.) FLAT BANDWIDTH ±0.2 dB (TYP.) Description The A51 RF amplifier is a discrete hybrid design, which uses

Contextual Info: A515/SMA515 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER • HIGH GAIN: 27.5 dB TYP. · LOW NOISE: 3.5 dB (TYP.) · HIGH OUTPUT POWER: +22.0 dBm (TYP.) Typical Performance @ 25°C Specifications (PRELIMINARY)* Characteristics Typical Frequency Small Signal Gain (min.)

8A513

Contextual Info: Cascadable Amplifier 10 to 500 MHz A513/ SMA513 V3 Features Product Image • HIGH LINEARITY IP3: +30 dBm TYP. IP2: +50 dBm (TYP.) • HIGH GAIN: 20 dB (TYP.) • LOW VSWR: 1.4:1 (TYP.) Description The A513 RF amplifier is a discrete thin film hybrid design,

transistor A514

Abstract: A514 SMA514 A5-14 CA514
Contextual Info: A514 / SMA514 Cascadable Amplifier 10 to 500 MHz Rev. V1 Features Product Image • HIGH GAIN: 28 dB TYP. • LOW NOISE: 4.0 dB (TYP.) • HIGH OUTPUT POWER: +19 dBm (TYP.) Description The A514 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

SMA5103

Contextual Info: SMA5103 N-channel + P-channel H-bridge External dimensions B Absolute maximum ratings Ta=25°C Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 20 V ID ±5 4 A ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A EAS* 2 — mJ 4 (Ta=25°C, with all circuits operating, without heatsink)

SMA5112

Contextual Info: SMA5112 Absolute maximum ratings Symbol Ratings VDSS VGSS ID 250 ±20 ±7 ID pulse EAS* PT θ j-a θ j-c Tch Tstg N-channel 3-phase DC motor 100V AC direct drive External dimensions B Electrical characteristics (Ta=25°C) Unit V(BR)DSS IGSS IDSS VTH Re(yfs)

sma5106

Abstract: SDK04 SLA5010 SLA5012 SLA5037 SLA5007
Contextual Info: •M O S FE T Array Selection Chart 100 eo ±4 N ch ; ¿41 a41) §4!) ’¿41) Pch \ n i) n f ) n n | f ' ±S ±4 SLA5024 200 ±5 Ì '± 8 SLA5005 Stepper motor and Solenoid driving 12 SLA5031 SLA5040 SLA5033 SMA5102: SLA5002 SLA5003 SMA5105 SMA5109

SMA5101

Abstract: RF Double Balanced Mixer
Contextual Info: SMA5101 Ordering number : ENA1839 SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

Contextual Info: MOS FET Array SMA5113 35 Tc=25ºC, All circuits operate, ∞ Fin Unit V V A A W W 130 7 mJ A 4 (Ta=25ºC, All circuits operate, No Fin) PT EAS *2 IAS j-a 31.2 Junction - Ambientare, Ta=25ºC, All circuits operate ºC/W j-c 3.57 Junction - Case, Ta=25ºC, All circuits operate

CA51

Abstract: SMA51 A51 transistor
Contextual Info: A51/SMA51 10 TO 400 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · LOW NOISE 2.7 dB TYP. · LOW VSWR <1.3:1 (TYP.) · FLAT BANDWIDTH ±0.2 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/03)* Characteristics Typical Frequency

MAAM-007272-SMA514

Abstract: SMA514
Contextual Info: Cascadable Amplifier 10 to 500 MHz MAAM-007272-SMA514 V1 Features Product Image • HIGH GAIN: 28 dB TYP. • LOW NOISE: 4.0 dB (TYP.) • HIGH OUTPUT POWER: +19 dBm (TYP.) Description The SMA514 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate

SMA5104

Contextual Info: SMA5104 N-channel + P-channel 3-phase motor drive External dimensions B Absolute maximum ratings Ta=25°C Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 20 V ID ±5 4 A ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A EAS* 2 — mJ 4 (Ta=25°C, with all circuits operating, without heatsink)

Contextual Info: Ordering number : ENA1839A SMA5101 MMIC http://onsemi.com Mixer, IIP3=15dBm, Gc=-0.5dB@450MHz, MCPH6 Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm • • • High conversion gain : -0.5dB (@450MHz)

SMA5101

Contextual Info: SMA5101 Absolute maximum ratings N-channel General purpose External dimensions B ••• Ta=25°C Symbol Ratings VDSS VGSS ID 100 ±20 ±4 ±8 (PW≤1ms) 16 SMA (Ta=25°C) Unit Symbol V V A ID(pulse) A EAS* mJ 4 (Ta=25°C, with all circuits operating, without heatsink)

SMA5101

Contextual Info: SMA5101 Absolute maximum ratings N-channel General purpose Ratings Unit Symbol 100 ±20 ±4 ±8 PW≤1ms 16 V V A A mJ W W °C/W °C/W °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr θ j–a θ j–c Tch Tstg 4 (Ta=25°C, with all circuits operating, without heatsink)

SMA5106

Contextual Info: SMA5106 Absolute maximum ratings N-channel With built-in flywheel diode Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VDSS VGSS ID 100 ±10 ±4 ±8 (PW≤1ms) 16 4 (PW≤0.5ms, Du≤25%) 8 (PW≤10ms, Single pulse) 120 V V A A mJ A A V W

A511

Abstract: CA511 SMA511
Contextual Info: A511 / SMA511 Cascadable Amplifier 10 to 500 MHz Rev. V3 Features • • • • Product Image HIGH POWER OUTPUT: +21 dBm TYP. HIGH THIRD ORDER IP3: +33 dBm (TYP.) HIGH EFFICIENCY: 52 mA (TYP.) @ +15 Vdc AVAILABLE IN BOTH TO-8 and SMTO-8 PACKAGES Description

sma5113

Contextual Info: MOS FET Array SMA5113 35 Tc=25ºC, All circuits operate, ∞ Fin Unit V V A A W W 130 7 mJ A 4 (Ta=25ºC, All circuits operate, No Fin) PT EAS *2 IAS j-a 31.2 Junction - Ambientare, Ta=25ºC, All circuits operate ºC/W j-c 3.57 Junction - Case, Ta=25ºC, All circuits operate

bm10

Abstract: A1839
Contextual Info: SMA5101 Ordering number : ENA1839A SANYO Semiconductors DATA SHEET SMA5101 Silicon Monolithic Linear IC RF Double Balanced Mixer IC Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm

SLA5015

Abstract: Sla5013 SLA5038 SLA5047 sla5011 SLA5006 SMA5106 equivalent SLA5021
Contextual Info: MOSFET Array Equivalent circuit and Selection Chart VDSS V Equivalent circuit 2 4 9 60 100 150 200 250 Application 11 SLA5001 (5A) Nch 1 5 8 12 SMA5101 (4A) 3 6 7 10 A 3 6 7 10 SLA5024 1 Pch 5 8 12 (4A) SLA5005 SLA5004 (5A) (5A) 2 4 9 11 Stepper motor and

SMA5118

Contextual Info: SMA5118 Absolute maximum ratings Symbol Ratings VDSS VGSS ID 500 ±30 ±5 ID pulse EAS* External dimensions B ••• Electrical characteristics (Ta=25°C) Unit V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr * : VDD=30V, L=3.4mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.