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    SMBT3906 Search Results

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    SMBT3906 Price and Stock

    Infineon Technologies AG SMBT3906E6327HTSA1

    TRANS PNP 40V 0.2A SOT23
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    DigiKey SMBT3906E6327HTSA1 Digi-Reel 41,601 1
    • 1 $0.25
    • 10 $0.152
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    • 1000 $0.06122
    • 10000 $0.06122
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    SMBT3906E6327HTSA1 Cut Tape 41,601 1
    • 1 $0.25
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    • 1000 $0.06122
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    SMBT3906E6327HTSA1 Reel 36,000 3,000
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    Rochester Electronics SMBT3906E6327HTSA1 142,000 1
    • 1 $0.0317
    • 10 $0.0317
    • 100 $0.0298
    • 1000 $0.0269
    • 10000 $0.0269
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    TME SMBT3906E6327HTSA1 1,790 10
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    • 100 $0.058
    • 1000 $0.0445
    • 10000 $0.0414
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    Chip 1 Exchange SMBT3906E6327HTSA1 318,338
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    EBV Elektronik SMBT3906E6327HTSA1 12,000 5 Weeks 3,000
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    New Advantage Corporation SMBT3906E6327HTSA1 9,000 1
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    • 10000 $0.103
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    Win Source Electronics SMBT3906E6327HTSA1 42,800
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    • 1000 $0.0678
    • 10000 $0.0452
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    onsemi SMBT3906DW1T1G

    TRANS 2PNP 40V 200MA SC88/SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT3906DW1T1G Digi-Reel 29,796 1
    • 1 $0.52
    • 10 $0.318
    • 100 $0.52
    • 1000 $0.13564
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    SMBT3906DW1T1G Cut Tape 29,796 1
    • 1 $0.52
    • 10 $0.318
    • 100 $0.52
    • 1000 $0.13564
    • 10000 $0.13564
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    SMBT3906DW1T1G Reel 27,000 3,000
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    Avnet Americas SMBT3906DW1T1G Reel 12 Weeks 30,000
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    Mouser Electronics SMBT3906DW1T1G 14,989
    • 1 $0.35
    • 10 $0.218
    • 100 $0.12
    • 1000 $0.105
    • 10000 $0.082
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    Newark SMBT3906DW1T1G Reel 3,000
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    Onlinecomponents.com SMBT3906DW1T1G
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    Avnet Asia SMBT3906DW1T1G 12 Weeks 30,000
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    Avnet Silica SMBT3906DW1T1G 6,000 13 Weeks 3,000
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    Chip One Stop SMBT3906DW1T1G Cut Tape 2,825
    • 1 -
    • 10 $0.183
    • 100 $0.114
    • 1000 $0.0975
    • 10000 $0.0921
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    EBV Elektronik SMBT3906DW1T1G 27,000 14 Weeks 3,000
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    Flip Electronics SMBT3906DW1T1G 30,000
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    New Advantage Corporation SMBT3906DW1T1G 21,000 1
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    • 10000 $0.3274
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    Wuhan P&S SMBT3906DW1T1G 27,000 1
    • 1 $0.23
    • 10 $0.23
    • 100 $0.15
    • 1000 $0.11
    • 10000 $0.11
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    onsemi SMBT3906DW3T1G

    TRANS 2PNP 40V 200MA SC88/SC70
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT3906DW3T1G Bulk
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    Rochester Electronics SMBT3906DW3T1G 3,000 1
    • 1 $0.0885
    • 10 $0.0885
    • 100 $0.0832
    • 1000 $0.0752
    • 10000 $0.0752
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    Infineon Technologies AG SMBT-3906-B5003

    TRANS PNP 40V 0.2A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT-3906-B5003 Cut Tape 1
    • 1 $0.13
    • 10 $0.13
    • 100 $0.13
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    SMBT-3906-B5003 Digi-Reel 1
    • 1 $0.13
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    SMBT-3906-B5003 Reel 60,000
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    Infineon Technologies AG SMBT-3906-E6767

    TRANS PNP 40V 0.2A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMBT-3906-E6767 Reel 15,000
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    SMBT3906 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SMBT3906 Infineon Technologies PNP Silicon Switching Transistor Array with high current gain Original PDF
    SMBT3906 Infineon Technologies PNP Silicon Switching Transistor Original PDF
    SMBT3906 Infineon Technologies Fast Switching Transistors; Package: PG-SOT23-3; Polarity: PNP; VCEO (max): 40.0 V; Ptot (max): 330.0 mW; hFE (min): 100.0 - 300.0; IC: 10.0 mA; Original PDF
    SMBT3906 Infineon Technologies PNP Silicon Switching Transistor Original PDF
    SMBT3906 Siemens Cross Reference Guide 1998 Original PDF
    SMBT3906 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    SMBT3906 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SMBT3906 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    SMBT3906B5003 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR AF PNP SW 40V SOT-23 Original PDF
    SMBT 3906 B5003 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 40V 0.2A SOT-23 Original PDF
    SMBT3906DW1T1G On Semiconductor SMBT3906 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    SMBT3906E6327 Infineon Technologies PNP Silicon Switching Transistor Arra... Original PDF
    SMBT3906E6327 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 40V SOT-23 Original PDF
    SMBT3906E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 40V 0.2A SOT-23 Original PDF
    SMBT 3906 E6767 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 40V 0.2A SOT-23 Original PDF
    SMBT3906E6767 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP SW SOT-23 Original PDF
    SMBT3906S Infineon Technologies PNP Silicon Switching Transistor Array Original PDF
    SMBT3906S Infineon Technologies PNP Silicon Switching Transistor Array with high current gain Original PDF
    SMBT3906S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    SMBT3906S Siemens Cross Reference Guide 1998 Original PDF

    SMBT3906 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original
    SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23 PDF

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original
    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


    Original
    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Jul-11-2001 SMBT3906U PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original
    SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original
    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF

    ic power 22E

    Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


    Original
    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Nov-30-2001 ic power 22E H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768 PDF

    SMBT3906S

    Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
    Text: SMBT3906S PNP Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3904S (NPN)


    Original
    SMBT3906S 100mA SMBT3904S VPS05604 EHA07175 OT363 EHP00773 EHP00764 Nov-30-2001 SMBT3906S TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768 PDF

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original
    SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking PDF

    H12E

    Abstract: h11e ic power 22E
    Text: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


    Original
    SMBT3904U 100mA SMBT3906U VPW09197 EHA07178 EHP00763 EHP00764 Jul-02-2001 H12E h11e ic power 22E PDF

    ic power 22E

    Abstract: H12E h11e EHP00761 10K275 marking S1A
    Text: SMBT3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3906S (PNP)


    Original
    SMBT3904S 100mA SMBT3906S VPS05604 EHA07178 OT363 EHP00763 EHP00764 Jul-02-2001 ic power 22E H12E h11e EHP00761 10K275 marking S1A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original
    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


    Original
    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


    Original
    SMBT3904U 100mA SMBT3906U VPW09197 EHA07178 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)330m Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.


    Original
    SMBT3906 Freq250M PDF

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D PDF

    SMBT3906DW1T1G

    Abstract: MBT3906DW1T1G
    Text: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF

    transistor marking s1a

    Abstract: No abstract text available
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original
    SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 transistor marking s1a PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


    Original
    SMBT3904U 100mA SMBT3906U VPW09197 EHA07178 PDF

    H12E

    Abstract: SMBT3906U
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


    Original
    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 H12E SMBT3906U PDF

    1N916

    Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


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    SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 Feb-18-2002 1N916 MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E PDF

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original
    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904 PDF

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


    OCR Scan
    0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor PDF