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    SMC CASE 403 Search Results

    SMC CASE 403 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    SMC CASE 403 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO-210AA

    Abstract: DO29 DO-201AR DO-204AF SOD JEDEC SMC 403-03 403A-03 CB-210 SOD106A jedec 5903
    Text: Geh.-Bez. Case type Diotec Äquivalent Diotec equivalent Geh.-Bez. Case type Diotec Äquivalent Diotec equivalent 1F SMB DO-29 DO-15 / DO-201 2F SMC DO-3 DO-201 / DO-15 / DO-41 267-03 C DO-201 DO-34 – < DO-35 403-03 B SMC DO-35 – 403A-03 B SMB DO-4 DO-4


    Original     		PDF DO-29 DO-15 DO-201 DO-201 DO-41 DO-34 DO-35) DO-35 DO-210AA DO29 DO-201AR DO-204AF SOD JEDEC SMC 403-03 403A-03 CB-210 SOD106A jedec 5903

    CASE 403-03

    Abstract: SMC 403-03 SMC case 403 403-03
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403–03 ISSUE D DATE 11/21/2001 SCALE 1:1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD


    Original     		PDF

    SMC 403-03

    Abstract: CASE 403-03 98ASB42668B SMC case 403
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E DATE 03 AUG 2005 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.


    Original     		PDF

    BJG 36

    Abstract: No abstract text available
    Text: SMCJ5.0 thru SMCJ440CA Pb Free Plating Product Pb SMCJ5.0 thru SMCJ440CA 1500W Surface Mount Transient Voltage Suppressors SMC/DO-214AB Mechanical Characteristics z CASE: Void-free, JEDEC DO-214AB Molded Plastic over glass passivated junction. .245 6.22


    Original     		PDF SMCJ440CA SMC/DO-214AB DO-214AB SMCJ400 SMCJ400C SMCJ400A SMCJ400CA SMCJ440 SMCJ440C BJG 36

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 403CMQ SERIES Technical Data Data Sheet N0990, Rev. E 403CMQ SERIES SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding


    Original     		PDF 403CMQ N0990,

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 403DMQ SERIES Technical Data Data Sheet N1676 Rev. - 403DMQ080/100 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding


    Original     		PDF 403DMQ N1676 403DMQ080/100

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 403CNQ… SERIES Technical Data Data Sheet N1226, Rev. D Green Products 403CNQ… SERIES SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding


    Original     		PDF 403CNQâ N1226,

    SMC case 403

    Abstract: MURS320T3 MURS320T3G MURS340T3 MURS340T3G MURS360T3 MURS360T3G case 403
    Text: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and


    Original     		PDF MURS320T3, MURS340T3, MURS360T3 SMC case 403 MURS320T3 MURS320T3G MURS340T3 MURS340T3G MURS360T3 MURS360T3G case 403

    5M MARKING CODE DIODE SMC

    Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G 5M MARKING CODE DIODE SMC SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode

    MBRS340T3G

    Abstract: MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D MBRS340T3G MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03

    marking B32 diode SCHOTTKY

    Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x

    MURS

    Abstract: MURS320T3G MURS360T3 MURS320T3 MURS340T3 MURS340T3G MURS360T3G
    Text: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and


    Original     		PDF MURS320T3, MURS340T3, MURS360T3 MURS320T3/D MURS MURS320T3G MURS360T3 MURS320T3 MURS340T3 MURS340T3G MURS360T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D

    SURS8320T3G

    Abstract: SURS8360T3G MURS340T3 MURS320T3G
    Text: MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high


    Original     		PDF MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G 15icable MURS320T3/D SURS8320T3G MURS340T3 MURS320T3G

    MBRS360BT3G

    Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
    Text: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D MBRS360BT3G MBRS360T3G MBRS360T3 B36 schottky diode

    Untitled

    Abstract: No abstract text available
    Text: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and


    Original     		PDF MURS320T3, MURS340T3, MURS360T3 200-60ight MURS320T3/D

    SMC case 403

    Abstract: No abstract text available
    Text: MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high


    Original     		PDF MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G 15licable MURS320T3/D SMC case 403

    GR-S-010

    Abstract: smc d-M9bW SMC D-A93 YG02 LZ 173 relay D-M9B ISO pneumatic standards symbols D-M9P CD-MU03 CQUB20-5
    Text: Compact Cylinder Plate type  Size: 20, 25, 32, 40 Width: Reduced by up to 40% compared with SMC CQ2 series    Total length: Reduced by up to 15% Volume: Reduced by up to 18% Mass: Reduced by up to 36% (compared with SMC MU series with 30 stroke)


    Original     		PDF SI-8210 GR-S-010 smc d-M9bW SMC D-A93 YG02 LZ 173 relay D-M9B ISO pneumatic standards symbols D-M9P CD-MU03 CQUB20-5

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36

    5M MARKING CODE DIODE SMC

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC

    MBRS320T3 MBRS330T3 MBRS340T3

    Abstract: marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G
    Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS320T3, MBRS330T3, MBRS340T3 MBRS340T3/D MBRS320T3 MBRS330T3 MBRS340T3 marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G

    SURS8360T3G

    Abstract: MURS320T3G MURS360T3G SURS8340T3G SURS8320T3G
    Text: MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high


    Original     		PDF MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G 15licable MURS320T3/D MURS320T3G MURS360T3G SURS8340T3G SURS8320T3G

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3

    gex 33

    Abstract: GFM 936 GFR 310 129 gez GFM 45 gfp 232 CASE 403-03 GeX 28 GEX MARKING gfk marking
    Text: SMC Devices Maximum die size 104 mil x 104 mil CASE 403-03 Rectifiers — Schottky Device MBRS340T3 MBRS360T3 VRRM Volts •o Amps Ifsm Amps V F @ 25°C Volts lR @ 25°C mA 40 60 3 3 80 80 0.525 0.74 2 2 If s m Amps Amps VF @ 25°C Volts lR @ 25°C Volts 200


    OCR Scan     		PDF MBRS340T3 MBRS360T3 MURS320T3 MURS360T3 gex 33 GFM 936 GFR 310 129 gez GFM 45 gfp 232 CASE 403-03 GeX 28 GEX MARKING gfk marking