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    SMD 6V TRANSISTOR Search Results

    SMD 6V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD 6V TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50


    Original     		HN1C07F 400mA 100mA 100mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Diodes SMD Type Product specification HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage


    Original     		HN1C07F 400mA 100mA 100mA, PDF

    3V IC LINEAR SMD

    Abstract: smd marking 806 FMMT459 450V 50MA NPN SOT23 LINEAR MARKING
    Text: Transistors SMD Type Silicon NPN High Voltage Switching Transistor FMMT459 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage - 90mV @ 50mA hFE 0.55 6V reverse blocking capability 2 +0.1 0.95-0.1 +0.1


    Original     		FMMT459 OT-23 150mA 20MHz 3V IC LINEAR SMD smd marking 806 FMMT459 450V 50MA NPN SOT23 LINEAR MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT459 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low saturation voltage - 90mV @ 50mA hFE 0.55 6V reverse blocking capability 2 +0.1 0.95-0.1 +0.1 1.9-0.1 50 @ 30 Ma +0.05


    Original     		FMMT459 OT-23 150mA 20MHz PDF

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode PDF

    smd transistor A5

    Abstract: smd transistor marking A5 SMD MARKING A16
    Text: Transistors IC SMD Type Product specification FMY1A • Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 3 Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter


    Original     		32MHZ smd transistor A5 smd transistor marking A5 SMD MARKING A16 PDF

    smd transistor marking L6 NPN

    Abstract: SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5
    Text: Transistors SMD Type NPN Silicon Transistor 2SC1623 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE = 200 TYP. 0.55 High DC Current Gain: +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 VCE = 6.0 V, IC = 1.0 mA +0.05 0.1-0.01 +0.1 0.97-0.1


    Original     		2SC1623 OT-23 smd transistor marking L6 NPN SMD TRANSISTOR L6 smd transistor marking l6 smd transistor marking l7 marking L6 npn smd L7 smd transistor L6 smd transistor SMD TRANSISTOR MARKING l4 smd sot23 marking l6 smd marking l5 PDF

    A08 smd transistor

    Abstract: smd transistor A5 SMD a16 Transistor smd transistor marking A5 SMD MARKING A16
    Text: Transistors IC SMD Type Emitter Common Dual Transistors FMY1A • Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 (3) Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃


    Original     		32MHZ A08 smd transistor smd transistor A5 SMD a16 Transistor smd transistor marking A5 SMD MARKING A16 PDF

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04 PDF

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3 PDF

    IPB80P04P4-07

    Abstract: PG-TO262-3-1 S 6085 J 4P0407
    Text: IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.4 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-07 S 6085 J 4P0407 PDF

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1 PDF

    transistor SMD MARKING CODE HF

    Abstract: SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t PDF

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE PDF

    smd transistor A5

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Power Management Dual Transistors FMY4A • Features Unit: mm ● Collector-emitter voltage: Tr1=-50V,Tr2=50V ● Collector current: Tr1=-150mA,Tr2=150mA 4 5 (3) (2) 1 (1) 2 3 Tr1 Tr2 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃


    Original     		-150mA 150mA 32MHZ smd transistor A5 PDF

    A06 smd transistor

    Abstract: smd transistor marking A5 SMD MARKING A16
    Text: Transistors IC SMD Type Product specification FMY4A • Features Unit: mm ● Collector-emitter voltage: Tr1=-50V,Tr2=50V ● Collector current: Tr1=-150mA,Tr2=150mA 4 5 3 (2) 1 (1) 2 3 Tr1 Tr2 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Rating


    Original     		-150mA 150mA 32MHZ A06 smd transistor smd transistor marking A5 SMD MARKING A16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) PDF

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4 PDF

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse PDF

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type General Purpose Transistor 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		2SC2412K OT-23 32MHZ PDF

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03 PDF

    SMD BR

    Abstract: 2SA1687
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1687 Features Very small-sized package. High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage


    Original     		2SA1687 -50mA SMD BR 2SA1687 PDF

    smd transistor m6

    Abstract: transistor smd marking m6
    Text: Transistors SMD Type PNP Silicon Transistor 2SA733 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector-Base Voltage: VCBO=-60V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		2SA733 OT-23 -10mA 100HZ -100mA, smd transistor m6 transistor smd marking m6 PDF