HIR26-21C
Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight
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CT1003Q43-V2
HIR26-21C
w32 smd transistor
w32 smd transistor 143
17-21SYGC/S530-E2/TR8
3A-01-B74-Y9C-A1S1T1DH-AM
ELM-1882-UYWB
19-223SURSYGC/S530-A3/E3/TR8
l289
itr8102
w27 smd transistor
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omron 8567
Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Text: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830
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Untitled
Abstract: No abstract text available
Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
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smd transistor marking A13C
Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
Text: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)
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MT5C6404
22L/300
MIL-STD-883
smd transistor marking A13C
smd transistor A6t 12
smd transistor A6t
A6T TRANSISTOR
A6t smd
a6t smd transistor
smd transistor wc
smd transistor A6t 50
C17E
smd transistor wc dc
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Untitled
Abstract: No abstract text available
Text: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300
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WME128K8-XXX
128Kx8
300nS
MIL-STD-883
Cycl250nS
128Kx
200nS
03HYX
150nS
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SMD A7c
Abstract: No abstract text available
Text: WHITE M IC R O E L E C T R O N IC S W S128K8-XCX 128Kx8 SRAM MODULE, SMD 5962 93156 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 A16C 2 A14C 3 A12C 4 A7C 5 E W 32 El Vcc 30 □ NC 29 □ w i 28 El A13 D A8 27 A3 C 9 24 E O E A2 C 10 A 1 C 11 23 A O C 12
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128Kx8
S128K8-XCX
120ns
100ns
01HXX
02HXX
03HXX
04HXX
05HXX
SMD A7c
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smd transistor A6t
Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
Text: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)
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MT5C6401
M38510/292
64Kx1
22L/300
T-46-23-r05
MIL-STD-883
smd transistor A6t
A4U marking transistor
A6t smd Transistor
A6T TRANSISTOR
smd transistor A4U
smd transistor A6t 14
SMD TRANSISTOR MARKING A1 T46
smd transistor A6t 50
transistor A6t 45
smd transistor marking a7*c
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Untitled
Abstract: No abstract text available
Text: WS256K8-XCX M/HITE / M I C R O E L E C T R O N I C S 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NC C 1 32 D V cc A16 C 2 31 □ A 15 A14 C 3 30 □ A 1 7 A12C 4 29 H W E A7C 5 2 8 □ A 13 A6 C 6 27 H AS C 7 26 □ A 9 as
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WS256K8-XCX
256Kx8
120ns
MIL-STD-883
100ns
01HXX
02HXX
03HXX
04HXX
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Untitled
Abstract: No abstract text available
Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns
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S512K8-XCX
512Kx8
120ns
MIL-STD-883
01HXX
02HXX
03HXX
04HXX
05HXX
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Untitled
Abstract: No abstract text available
Text: WS57C128FB MILITARY HIGH SPEED 16Kx 8 CMOS EPROM KEY FEATURES • EPI Processing • Ultra-Fast Access Time — Latch-up Immunity Up to 200 mA — 45 ns • Standard EPROM Pinout • DIP and Surface Mount Packaging Available • Low Power Consumption • DESC SMD No. 5962-87661
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WS57C128FB
WS57C128FB
MIL-STD-883C
MIL-STD-883C
WS57C128FB-45DMB
WS57C128FB-55CMB
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Untitled
Abstract: No abstract text available
Text: G2 WME128K8-XXX M/HITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300ns PIN C O N FIG U R A T IO N ■ JEDEC Approved Packages 32 DIP 32 CSOJ • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300
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WME128K8-XXX
128Kx8
300ns
200ns
150ns
140ns
01HXX
250ns
02HXX
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27c256l
Abstract: No abstract text available
Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns A ccess Tim e • EPI Processing * Fast Programming — Latch-U p Im m unity to 200 m A * DESC SMD No. 5962-86063 — ESD Protection E xceeds 2000 Volts
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WS27C256L
-883C
-883C
256L-15T
256L-20D
WS27C256L.
27c256l
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Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
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MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
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256Kx8bit
Abstract: No abstract text available
Text: M4HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 A18C 1 • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
Re128Kx8
512Kx
256Kx8bit
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Untitled
Abstract: No abstract text available
Text: 77 WHITE /M IC R O ELEC T R O N IC S WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES • Access Times of 70, 9 0 ,1 2 0 ,1 50ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
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WMF512K8-XXX5
512Kx8
512Kx8
512Kx
64KByte
120ns
02HYX
03HYX
04HYX
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256k x 8 SRAM
Abstract: SRAM 8T 256K x 8 SRAM dip
Text: WHITE /MICROELECTRONICS □ WS256K8-XCX 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 • A ccess Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW W 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 U □ □ □ H □ □ □ Vcc A15 A17 w i A13 A8 A9
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WS256K8-XCX
256Kx8
IL-STD-883
06HXX
07HXX
08HXX
256k x 8 SRAM
SRAM 8T
256K x 8 SRAM dip
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27s35a
Abstract: 82hs189 27S35
Text: ^D jSTRJB^nO N^TAT^W EN ^^ Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 SMD Drawing Number 5962-86706 Generic Part Number 27S35/37 4-213 i l AMD 1. SCOPE 1-1 Scope. This drawing describes device requirements f o r c la s s B m ic ro c irc u its In accordance w ith
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27S35/37
MIL-STD-883,
MIL-STD-883
MIL-M-38510
27s35a
82hs189
27S35
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Untitled
Abstract: No abstract text available
Text: M/HITE M IC R O ELE C TR O N IC S WMF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 PRELIMINARY* FEATURES • Access Times o f 60, 70, 90, 120 and 150nS ■ 5 V o lt P rogram m ing. 5V ± 10% Supply. ■ Packaging ■ Low Pow er CMOS • 3 2 lead. H erm etic Ceramic, 0.400" SOJ Package 101
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WMF128K8-XXX5
128Kx8
150nS
16KBytes
16KByte
120nS
01HXX*
02HXX*
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Untitled
Abstract: No abstract text available
Text: T T WHITE M IC R O E LE C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A ieC A 16 C A 15 Ü A 12 C A7 C A6 C A5 Ü A4 C A3 C A2 C 1 2 3 4
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
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Untitled
Abstract: No abstract text available
Text: WHITE M I C R O E L E C T R O N I C S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CM OS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W 32 □ V . 31 □ WE 30 □ A17 A18C 1 A16C 2 A15C 3
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300nS
MIL-STD-883
Typical/100mA
512Kx
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Untitled
Abstract: No abstract text available
Text: ca I/I/HITE / M I C R O E L E C T R O N I C S WMS128K8-XXX 128Kx8 MONOLITHIC SRAM. SMD 5962-96691 pending FEATURES A c c e s s Tim es 17, 20, 25, 35, 45, 55n s M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le Radiation Tolerant D e vice s A va ilab le
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WMS128K8-XXX
128Kx8
05HZX*
06HZX*
07HZX*
08HZX*
09HZX*
10HZX*
128KX
05HXX*
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i05 SMD
Abstract: onolithic
Text: T T WMS128K8-XXX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending PRELIMINARY * FEATURES • Access Tim es 17, 20, 25, 35, 45, 55nS M IL-S TD -883 C om p liant Devices A va ila b le ■ R adiation T o le ra n t Devices A va ila b le
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WMS128K8-XXX
128Kx8
05HZX*
07HZX*
08HZX*
09HZX*
10HZX*
128KX
05HXX*
07HXX*
i05 SMD
onolithic
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UA15
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W S512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW ^ 32 31 30 29 28 27 26 25 24 D Vcc ÜA15 J A17 HWË H A13 H A8 H A9 U A11 Access Tim es 20, 25, 35, 45ns • S tandard M ic ro c irc u it D raw ing , 5962-92078
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S512K8-XCX
512Kx8
I/02C
MIL-STD-883
06HTX
07HTX
08HTX
09HTX
UA15
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256K x 8 SRAM dip
Abstract: No abstract text available
Text: WS256K8-XCX I/I/HITE /M ICRO ELECTRO N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 W 32 ^ Vcc □ A15 A16C 2 31 A14C 3 A12C 4 30 □ A 1 7 29 □ W E A7C 5 28 A6 C 6 A5 C 7 27 H8 25 A4 □ A13 □ A8 26 □ A9 Standard Microcircuit Drawing, 5962-93157
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WS256K8-XCX
256Kx8
120ns
MIL-STD-883
100ns
01HXX
02HXX
03HXX
256K x 8 SRAM dip
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