SMD CODE E2 TRANSISTOR Search Results

SMD CODE E2 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SMD CODE E2 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN1294 Abstract: PD60015 PD60015S Text: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60015 PD60015S IS-97 PD60015 PowerSO-10RF. AN1294 PD60015S	PDF
pd55035 Abstract: smd transistor code A4 Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55035 PD55035S PowerSO-10RF. smd transistor code A4	PDF
smd transistor code A4 Abstract: AN1294 PD60004 PD60004S Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60004 PD60004S IS-97 PD60004 PowerSO-10RF. smd transistor code A4 AN1294 PD60004S	PDF
AN1294 Abstract: PD60030 PD60030S Text: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60030 PD60030S IS-97 PD60030 PowerSO-10RF. AN1294 PD60030S	PDF
smd code marking NEC Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part	Original	G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP	PDF
Untitled Abstract: No abstract text available Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55025 PD55025S PowerSO-10RF PD55025	PDF
AN1294 Abstract: LET20015 LET90015 Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION	Original	LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015	PDF
AN1294 Abstract: LET20015 LET90015 Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION	Original	LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015	PDF
smd code ND e3 Abstract: No abstract text available Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55035 PD55035S PowerSO-10RF. smd code ND e3	PDF
smd code ND e3 Abstract: No abstract text available Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55035 PD55035S PowerSO-10RF. smd code ND e3	PDF
transistor SMD Y1 Abstract: y1 smd transistor smd transistor E3 cdfp4-f16 smd transistor a2 SMD TRANSISTOR Y1 y4 smd transistor y6 smd transistor SMD transistor code AL 5962F9853401VEC Text: ACS138MS S E M I C O N D U C T O R Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs	Original	ACS138MS ACS138MS transistor SMD Y1 y1 smd transistor smd transistor E3 cdfp4-f16 smd transistor a2 SMD TRANSISTOR Y1 y4 smd transistor y6 smd transistor SMD transistor code AL 5962F9853401VEC	PDF
transistor SMD Y1 Abstract: y1 smd transistor SMD TRANSISTOR Y1 TRANSISTOR C 4460 CDFP4-F16 SMD TRANSISTOR Y7 Y5 smd transistor smd transistor E3 Text: ACTS138MS S E M I C O N D U C T O R Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACTS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three TTL level binary	Original	ACTS138MS ACTS138MS transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 TRANSISTOR C 4460 CDFP4-F16 SMD TRANSISTOR Y7 Y5 smd transistor smd transistor E3	PDF
capacitor 220 uf Abstract: No abstract text available Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead	Original	PD57060 PD57060S PD57060S PowerSO-10RF. capacitor 220 uf	PDF
Untitled Abstract: No abstract text available Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE	Original	PD57070 PD57070S PowerSO-10RF PowerSO-10RF.	PDF

y6 smd transistor Abstract: SMD TRANSISTOR Y1 cdfp4-f16 Y6 smd y4 smd transistor e2 smd transistor Y5 smd y1 smd transistor cdfp4 smd transistor A1 Text: ACS138MS Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs	Original	ACS138MS MIL-PRF-38535 ACS138MS 25Micron 100MeV/ y6 smd transistor SMD TRANSISTOR Y1 cdfp4-f16 Y6 smd y4 smd transistor e2 smd transistor Y5 smd y1 smd transistor cdfp4 smd transistor A1	PDF
y6 smd transistor Abstract: y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC Text: ACTS138MS Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACTS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three TTL level binary	Original	ACTS138MS MIL-PRF-38535 ACTS138MS 25Micron 100MeV/ y6 smd transistor y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC	PDF
BTS442E2 Abstract: E3043 E3062 E3062A Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 BTS442E2 E3062A Text: PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown	Original	O-220AB/5 O-220AB/5, E3043 E3043 Q67060-S6206-A2 Q67060-S6206-A3 E3062 BTS442E2 E3062A Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 BTS442E2 E3062A	PDF
4267 G Abstract: E2 SMD Transistor Text: 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms	Original	Q67000-A9153 Q67006-A9169 Q67000-A9246 P-TO220-7-3 P-TO220-7-180 P-TO220-7-230 P-DSO-14-8 P-TO220-7-3 O-220 E3180) 4267 G E2 SMD Transistor	PDF
Untitled Abstract: No abstract text available Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable	Original	Q67000-A8339 Q67000-A8340 GPD05583 GPS05121	PDF
P1M marking code sot 223 Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223 Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions	OCR Scan	PXTA14 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 P1M marking code sot 223 marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223	PDF
smd code marking v8 sot23 Abstract: SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13 Text: BROADBAND SMD TRANSISTORS DESCRIPTION • Philips Components broadband transistors are the result of leading-edge technology dedicated to expanding performance and selection in the wideband arena. The devices are ideal amplifiers for VHF, UHF, and microwave	OCR Scan	OT-223 BFG135 BFG197 BFG198 BFQ17 BFQ18A BFQ19 BFQ67 BFQ149 BFR53 smd code marking v8 sot23 SMD MARKING CODE 101 SOT23-5 SMD sot23 marking E6 smd p8 sot23 marking codes n1 transistors sot-23 SMD sot23-5 marking E2 marking code 4k SMD sot23-5 SMD CODE E2 smd code marking v8 sot223 SOT89 smd marking 13	PDF
smd code marking 2A sot23 Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23 Text: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection	OCR Scan	OT-89 OT-223 PMBT2907A PMBT3906 PMBT4403 PMBTA55 PMBTA56 PMBTA70 PXT2907A PXT3906 smd code marking 2A sot23 MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23	PDF
transistor kA2 smd Abstract: AEP01481 Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms	OCR Scan	Q67000-A9153 P-T0220-7-3 67006-A P-T0220-7-180 Q67000-A9246 P-T0220-7-230 GPT05887 transistor kA2 smd AEP01481	PDF
5cp smd Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23 Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro duction equipment to fulfill the need for generic, low-cost	OCR Scan	OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23	PDF

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SMD CODE E2 TRANSISTOR Search Results

SMD CODE E2 TRANSISTOR Result Highlights (5)

SMD CODE E2 TRANSISTOR Datasheets Context Search

AN1294

pd55035

smd transistor code A4

AN1294

smd code marking NEC

Untitled

AN1294

AN1294

smd code ND e3

smd code ND e3

transistor SMD Y1

transistor SMD Y1

capacitor 220 uf

Untitled

y6 smd transistor

y6 smd transistor

BTS442E2

4267 G

Untitled

P1M marking code sot 223

smd code marking v8 sot23

smd code marking 2A sot23

transistor kA2 smd

5cp smd