smd code marking HD SOT23
Abstract: No abstract text available
Text: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
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PBSS5130T
AEC-Q101
smd code marking HD SOT23
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TRANSISTOR SMD MARKING CODE QR
Abstract: 2PMV65XP
Text: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
TRANSISTOR SMD MARKING CODE QR
2PMV65XP
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placeholder for manufacturing site code
Abstract: No abstract text available
Text: PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
placeholder for manufacturing site code
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SOt23-3 footprint wave soldering
Abstract: MARKING TR SOT23-3 P MOSFET
Text: PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
SOt23-3 footprint wave soldering
MARKING TR SOT23-3 P MOSFET
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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PMEG3010BEA
Abstract: PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV PMEGXX10BEA PMEGXX10BEV SC-76 SMD MARKING g5
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier
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PMEGXX10BEA;
PMEGXX10BEV
PMEGXX10BEA
R76/04/pp11
PMEG3010BEA
PMEG2010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEA
PMEG4010BEV
PMEGXX10BEA
PMEGXX10BEV
SC-76
SMD MARKING g5
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV30UN2
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSH205G2
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV75UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 13 March 2014 Preliminary data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV130ENEA
O-236AB)
AEC-Q101
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV48XPA
O-236AB)
AEC-Q101
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PMEG3010BEA
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA;
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PMEGXX10BEA;
PMEGXX10BEV
PMEGXX10BEA
R76/04/pp11
PMEG3010BEA
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV250EPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XPEA
O-236AB)
AEC-Q101
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SOt23-3 footprint wave soldering
Abstract: No abstract text available
Text: PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
SOt23-3 footprint wave soldering
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PMV65XP
Abstract: No abstract text available
Text: SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
PMV65XP
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SMD MARKING g5
Abstract: smd diode g5 PMEG3010BEA diode smd marking SOD323 5-6 transistor smd code marking 420 PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product specification Supersedes data of 2004 Apr 02 2004 Jun 14 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier
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PMEGXX10BEA;
PMEGXX10BEV
PMEGXX10BEA
SCA76
R76/04/pp11
SMD MARKING g5
smd diode g5
PMEG3010BEA
diode smd marking SOD323 5-6
transistor smd code marking 420
PMEG2010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEA
PMEG4010BEV
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DIODE smd marking CODE NZ
Abstract: MARKING CODE 16 transistor sot23 smd code marking HD SOT23
Text: SO T2 3 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
DIODE smd marking CODE NZ
MARKING CODE 16 transistor sot23
smd code marking HD SOT23
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV250EPEA
O-236AB)
AEC-Q101
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Philips MARKING CODE a91
Abstract: smd code marking TV sot23 smd code marking e3 5C sot23 SOT-23 marking code IT smd code marking HD smd sot23 marking E3 5c sot-23 sot23 marking 5c 8 smd marking NC package sot23
Text: 11 Voltage Reference SMD Diodes Voltage Reference SMD® Diodes % % % % Description Mechanical Data Philips Components voltage reference series is composed of stabistors low voltage stabilizing diodes and tempera ture compensating 6.2V reference diodes. Primary applica
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OT-23
OT-23
TRL13
Philips MARKING CODE a91
smd code marking TV sot23
smd code marking e3
5C sot23
SOT-23 marking code IT
smd code marking HD
smd sot23 marking E3
5c sot-23
sot23 marking 5c 8
smd marking NC package sot23
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