transistor SMD Y1
Abstract: smd transistor Y1 sot-23
Text: Lighting Ballast - American Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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BUF644
100-kHz
O-220
BUF654
BUF742-S-069
O-252
transistor SMD Y1
smd transistor Y1 sot-23
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y1 smd transistor
Abstract: transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd
Text: Lighting Ballast - European Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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O-252
BUF644
100-kHz
O-220
BUF654
BUF742-S-069
y1 smd transistor
transistor SMD Y1
c3 smd transistor
smd transistor Y1 sot-23
TRANSISTOR SMD
x2 smd transistor
diode ZENER C2 smd
1/a4w smd transistor
Y1 smd
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vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m
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VMN-SG2125-1009
vishay 1N4007 DO-214AC
7 Segment common cathode
MBR360 smd
diode DGP30
05B2S
SMD DIODE UF4007
1N4007 DO-214BA
VS-30BQ100PBF
1N5822 SMD
1N4007 MINI MELF
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Selector Guide
Abstract: gl112 VS-20ETS08F SS10P2CL
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers
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VMN-SG2125-1407
DISC9337-2726
Selector Guide
gl112
VS-20ETS08F
SS10P2CL
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10BQ100PbF
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers
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VMN-SG2125-1403
DISC9337-2726
10BQ100PbF
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Untitled
Abstract: No abstract text available
Text: BYG10 VISHAY Vishay Semiconductors Standard Avalanche SMD Rectifier Features • • • • • Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable Applications Surface mounting
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BYG10
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
BYG10Y
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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BYG10
Abstract: BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y smd diode byg10
Text: BYG10 Vishay Semiconductors Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15 811 Applications Surface mounting General purpose rectifier
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BYG10
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
BYG10Y
D-74025
07-Sep-00
BYG10
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
BYG10Y
smd diode byg10
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telefunken
Abstract: BYG10 BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Text: BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15 811 Applications Surface mounting General purpose rectifier
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BYG10
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
BYG10Y
D-74025
07-Sep-00
telefunken
BYG10
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
BYG10Y
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
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vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
vishay MARKING UM SMA
smd code marking e3
BYG10D-BYG10M
BYG10Y
JESD22-B102D
J-STD-002B
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BYG10M
Abstract: BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG10M
BYG10D-BYG10M
BYG10Y
JESD22-B102D
J-STD-002B
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BYG10J
Abstract: No abstract text available
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
BYG10J
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vishay MARKING UM SMA
Abstract: BYG10D BYG10D-BYG10M BYG10Y J-STD-002 JESD 201 class 1A smd BYG10J BYG10G TR smd diode byg10K
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
18-Jul-08
vishay MARKING UM SMA
BYG10D-BYG10M
BYG10Y
J-STD-002
JESD 201 class 1A smd
BYG10J
BYG10G TR
smd diode byg10K
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Untitled
Abstract: No abstract text available
Text: BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction
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BYG10D,
BYG10G,
BYG10J,
BYG10K,
BYG10M,
BYG10Y
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: BYG10x-E3/HE3 www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10x-E3/HE3
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: BYG10x-M3/HM3 www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10x-M3/HM3
J-STD-020,
DO-214AC
AEC-Q101
200electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction
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BYG10D,
BYG10G,
BYG10J,
BYG10K,
BYG10M,
BYG10Y
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
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BYG10D
Abstract: BYG10D-BYG10M BYG10Y J-STD-002 BYG10M
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
11-Mar-11
BYG10D-BYG10M
BYG10Y
J-STD-002
BYG10M
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current
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BYG10D
BYG10Y
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current
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BYG10D
BYG10Y
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current
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BYG10D
BYG10Y
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current
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BYG10D
BYG10Y
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current
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BYG10D
BYG10Y
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
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