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    SMD DIODE MARKING 303 Search Results

    SMD DIODE MARKING 303 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE MARKING 303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    67a smd

    Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6015 2N08L07 P-TO263-3-2 67a smd 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a

    14N03LA

    Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22

    14N03L

    Abstract: 14N03LA 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03LA 14N03

    13n03la

    Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
    Text: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level


    Original     		PDF IPD13N03LA IPU13N03LA P-TO252-3-11 P-TO251-3-21 Q67042-S4159 13N03LA 13n03la 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22

    14N03L

    Abstract: 14N03
    Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original     		PDF IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03

    IPB14N03LA

    Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
    Text: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB14N03LA PG-TO263-3-2 Q67042-S4156 14N03LA 14N03 14N03LA smd code D24 SMD CODE d20

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: SSESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that


    Original     		PDF SSESD11B ESD11B SSESD11B/D

    Untitled

    Abstract: No abstract text available
    Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that


    Original     		PDF ESD11B IEC61000-4-2 ESD11B/D

    Untitled

    Abstract: No abstract text available
    Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that


    Original     		PDF ESD11B ESD11B ESD11B/D

    024 marking bidirectional diode

    Abstract: smd diode marking coding
    Text: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that


    Original     		PDF ESD11B IEC61000-4-2 ESD11B/D 024 marking bidirectional diode smd diode marking coding

    Untitled

    Abstract: No abstract text available
    Text: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,


    Original     		PDF ESD11N5 ESD11N

    PNC0106A

    Abstract: No abstract text available
    Text: ESD5484FCT5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are


    Original     		PDF ESD5484FCT5G ESD5484 ESD5484/D PNC0106A

    024 marking bidirectional diode

    Abstract: laptop pcb circuits smd diode marking coding smd diode marking code 0s
    Text: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that


    Original     		PDF ESD11B5 ESD11B 024 marking bidirectional diode laptop pcb circuits smd diode marking coding smd diode marking code 0s

    Untitled

    Abstract: No abstract text available
    Text: ESD5484FCT5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are


    Original     		PDF ESD5484FCT5G ESD5484 IEC61000-4-2 ESD5484/D

    Untitled

    Abstract: No abstract text available
    Text: ESD5484FCT5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are


    Original     		PDF ESD5484FCT5G ESD5484 IEC61000-4-2 ESD5484/D

    smd diode marking code a 041

    Abstract: NUR30Q NUR30QW5T1 5M MARKING CODE SCHOTTKY DIODE smd marking 5 K sot-353
    Text: NUR30Q Quad Schottky Barrier Diodes Array These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where


    Original     		PDF NUR30Q NUR30Q/D smd diode marking code a 041 NUR30Q NUR30QW5T1 5M MARKING CODE SCHOTTKY DIODE smd marking 5 K sot-353

    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


    Original     		PDF BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5

    toshiba smd marking

    Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
    Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


    Original     		PDF NTHD3101F NTDH3101F/D

    NTHD3101FT1G

    Abstract: NTHD3101F NTHD3101FT1 TL82
    Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package


    Original     		PDF NTHD3101F NTHD3101F/D NTHD3101FT1G NTHD3101F NTHD3101FT1 TL82

    smd marking DA QT

    Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
    Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics


    Original     		PDF NTHD3133PF NTDH3133PF/D smd marking DA QT 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier


    OCR Scan     		PDF 6235bà P-DSO-14-1, P-DS0-14-4 35x45 Q254WIBi S35bG5