smd jpS
Abstract: smd JS SMD MARKING E 5 smd diode s 4 j SMD MARKING P smd ja smd transistor js BAW101 GE-250 smd JS p
Text: Diodes SMD Type Silicon Switching Diode Array BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e
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BAW101
smd jpS
smd JS
SMD MARKING E 5
smd diode s 4 j
SMD MARKING P
smd ja
smd transistor js
BAW101
GE-250
smd JS p
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smd JSs diode
Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Text: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e
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BAW100
smd JSs diode
smd JSs
smd JSs 75
marking JSs
BAW100
smd JS
smd JSs 85
smd JS p
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smd JS
Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Text: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature
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BAT62
smd JS
smd diode marking ja
diode js
smd transistor js
650 DIODE
k 650
smd diode JS
smd diode nh
BAT62
ja smd
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smd JS
Abstract: smd JS 3 diode smd transistor js DIODE JS marking bbs diode sot 100 mA diode diode ja smd marking SOT343 smd diode marking ja
Text: Diodes SMD Type Silicon RF Switching Diode BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100
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BAR81W
OT-343
smd JS
smd JS 3
diode
smd transistor js
DIODE JS
marking bbs diode sot
100 mA diode
diode ja
smd marking SOT343
smd diode marking ja
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smd diode marking Av
Abstract: 54s diode BAT17-05W "BAT17" marking 1AV BAT17-04W BAT17-06W BAT17-04 1AV marking
Text: Diodes SMD Type Silicon Schottky Diode BAT17-04W,BAT17-05W,BAT17-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Sym bol Value Unit VR 4 V IF 130
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BAT17-04W
BAT17-05W
BAT17-06W
smd diode marking Av
54s diode
"BAT17"
marking 1AV
BAT17-06W
BAT17-04
1AV marking
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318 MARKING DIODE
Abstract: smd rf transistor marking BAT68-04W BAT68-05W BAT68-06W bat68
Text: Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current
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BAT68-04W
BAT68-05W
BAT68-06W
BAT68-04W
BAT68-05W
318 MARKING DIODE
smd rf transistor marking
BAT68-06W
bat68
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smd diode UM
Abstract: SMD 3E marking 3e smd diode marking um "Schottky Barrier Diode" Schottky RB717F
Text: Diodes SMD Type Schottky barrier diode RB717F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current * IO 30 mA I FSM 200
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RB717F
smd diode UM
SMD 3E
marking 3e
smd diode marking um
"Schottky Barrier Diode"
Schottky
RB717F
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3D smd marking
Abstract: smd diode UM smd diode marking um SHOTTKY diode SMD marking 3D smd marking 3d SHOTTKY DIODE SMD MARKING 3D SMD 3D diode shottky
Text: Diodes SMD Type Shottky barrier diode RB715F Features Small mold type. UMD3 High reliability. Absolute Maxim um Ratings Ta = 25 Param eter Reverse voltage (repetitive peak) Sym bol Lim its Unit V RM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current
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RB715F
3D smd marking
smd diode UM
smd diode marking um
SHOTTKY diode SMD
marking 3D smd
marking 3d
SHOTTKY DIODE
SMD MARKING 3D
SMD 3D diode
shottky
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smd JS
Abstract: smd marking S9 BAT14-099 smd JS 5 marking s9 DIODE JS smd transistor js BAT14 bat14-099 data sheet smd rf transistor marking
Text: Diodes SMD Type Silicon Dual Schottky Diode BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55
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BAT14-099
smd JS
smd marking S9
BAT14-099
smd JS 5
marking s9
DIODE JS
smd transistor js
BAT14
bat14-099 data sheet
smd rf transistor marking
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sym 435
Abstract: smd rf transistor marking BAT68W smd diode UM 65 A
Text: Diodes SMD Type Silicon Schottky Diodes BAT68W Features For mixer applications in the VHF/UHF range For high speed switching Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current IF 150 mA P tot 150 mW
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BAT68W
sym 435
smd rf transistor marking
BAT68W
smd diode UM 65 A
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR
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BAR81
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smd marking 35
Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current
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1SS378
smd marking 35
1SS378
smd diode UM
smd diode marking um
smd diode UM 85
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current
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1SS372
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Product specification BAT14-099 Unit: mm Features DBS mixer application to 12 GHz Low noise figure Medium barrier type Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Reverse voltage VR 4 V Forward current IF 90 mA 55 P tot
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BAT14-099
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smd rf transistor marking
Abstract: smd transistor js BAR60 BAR61
Text: Diodes SMD Type Silicon PIN Diodes BAR60;BAR61 Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter R everse voltage Forward current Total power dissipation, T S 65 N ote 1 S ym bol V alue
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BAR60
BAR61
BAR60
smd rf transistor marking
smd transistor js
BAR61
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MARKING C7
Abstract: HSB88WA r c e marking
Text: Diodes SMD Type Silicon Schottky Barrier Diode HSB88WA Features Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it
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HSB88WA
MARKING C7
HSB88WA
r c e marking
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A CLIPPER CIRCUIT APPLICATIONS
Abstract: smd transistor marking A14 MARKING A14 diode marking 1200 diode for clippers marking 720 transistor 1SS305 D R MARKING
Text: Diodes SMD Type SILICON SWITCHING DIODE 1SS305 Features Low capacitance: Ct = 4.0 pF MAX. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r S ym bol
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1SS305
A CLIPPER CIRCUIT APPLICATIONS
smd transistor marking A14
MARKING A14
diode marking 1200
diode for clippers
marking 720 transistor
1SS305
D R MARKING
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smd diode S4
Abstract: smd diode marking s4 DIODE marking S4 DIODE S4 smd S4 DIODE S4 SMD diode DIODE S4 s4 diode smd Diode SMD S4 smd diode DIODE S4
Text: Diodes SMD Type Band-switching diode BA891 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Very small plastic SMD package + +0.1 0.6-0.1 - Low diode capacitance:max. 1.05 pF Low diode forward resistance:max. 0.7 +0.1 1.6-0.1 0.77max +0.05
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BA891
OD-523
77max
07max
smd diode S4
smd diode marking s4
DIODE marking S4
DIODE S4 smd
S4 DIODE
S4 SMD diode
DIODE S4
s4 diode smd
Diode SMD S4
smd diode DIODE S4
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smd diode marking Ja
Abstract: SMD DIODE DEVICE marking R diode diode 230 BAT74 Low Forward Voltage Diode single power diode package smd ae smd diode j smd diode S
Text: Diodes SMD Type Schottky Barrier Double Diode BAT74 Unit: mm Features Low forward voltage Guard ring protected Small SMD package. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current Symbol Test Condition Min 30
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BAT74
smd diode marking Ja
SMD DIODE DEVICE marking R
diode
diode 230
BAT74
Low Forward Voltage Diode
single power diode package
smd ae
smd diode j
smd diode S
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l77a
Abstract: L03A L03B LP2981IM5-3.2 l04b regulator L04B SOT-23 L05b L0DA L05A L77B
Text: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all
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LP2981
OT-23
LP2981
l77a
L03A
L03B
LP2981IM5-3.2
l04b regulator
L04B SOT-23
L05b
L0DA
L05A
L77B
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l04a SMD
Abstract: L03A l03a smd TRANSISTOR SMD MARKING CODE L03A L0DA LP2981IM5-5.0 L05A L05B L77A L77B
Text: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all
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LP2981
OT-23
LP2981
l04a SMD
L03A
l03a smd
TRANSISTOR SMD MARKING CODE L03A
L0DA
LP2981IM5-5.0
L05A
L05B
L77A
L77B
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L77A
Abstract: l04a L03B L05A L03A l36a l05b smd transistor TRANSISTOR SMD MARKING CODE L03A l03a smd l0db
Text: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all
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LP2981
OT-23
LP2981
L77A
l04a
L03B
L05A
L03A
l36a
l05b smd transistor
TRANSISTOR SMD MARKING CODE L03A
l03a smd
l0db
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L03A
Abstract: L77A l04a SMD l03a smd L03B L05A L05B L77B LP2981 MF05A
Text: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all
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LP2981
OT-23
LP2981
L03A
L77A
l04a SMD
l03a smd
L03B
L05A
L05B
L77B
MF05A
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l03a smd
Abstract: l04b SMD l04a SMD L03A TRANSISTOR SMD MARKING CODE L03A smd code marking LP2981 l03b SMD smd code L35a L0cB l04a
Text: LP2981 Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 and micro SMD Packages General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all
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LP2981
OT-23
LP2981
CSP-9-111S2)
CSP-9-111S2.
l03a smd
l04b SMD
l04a SMD
L03A
TRANSISTOR SMD MARKING CODE L03A
smd code marking LP2981
l03b SMD
smd code L35a
L0cB
l04a
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