TRANSISTOR SMD MARKING CODE 1K
Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
|
OCR Scan
|
CLL5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE 1K
DIODE smd marking code UM 41
2/DIODE smd marking code UM 41
|
PDF
|
TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
|
OCR Scan
|
OT-23
350mW
CMPZ5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE w6
SMD TRANSISTOR MARKING 5H
|
PDF
|
smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
|
Original
|
RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
|
PDF
|
DIODE marking S4 77
Abstract: smd diode marking 77 marking s4 resistor DIODE S4 77 diode S4 SMD smd marking rd BAP70-02 DIODE marking S4 marking 77 diode MARKING 54 "Pin Diode"
Text: Diodes SMD Type Silicon PIN diode BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max
|
Original
|
BAP70-02
OD-523
77max
07max
DIODE marking S4 77
smd diode marking 77
marking s4 resistor
DIODE S4 77
diode S4 SMD
smd marking rd
BAP70-02
DIODE marking S4
marking 77 diode
MARKING 54 "Pin Diode"
|
PDF
|
smd diode UM 35
Abstract: smd JH DSAIH0002551
Text: Low Leakage Diode Applications 1 N 3595 I DO-35 Glass Package Used in instrum entation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package n o m in a l d im e n s io n s Six sigm a quality M etallurgical^ bonded
|
OCR Scan
|
DO-35
LL-34/35
il-S-19500/24'
MIL-STD-750
N3595-1
-213A
LL3595)
3595U
smd diode UM 35
smd JH
DSAIH0002551
|
PDF
|
sym 435
Abstract: smd rf transistor marking BAT68W smd diode UM 65 A
Text: Diodes SMD Type Silicon Schottky Diodes BAT68W Features For mixer applications in the VHF/UHF range For high speed switching Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current IF 150 mA P tot 150 mW
|
Original
|
BAT68W
sym 435
smd rf transistor marking
BAT68W
smd diode UM 65 A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Product specification BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max
|
Original
|
BAP70-02
OD-523
77max
07max
|
PDF
|
BAT68-03W
Abstract: 318 MARKING DIODE
Text: Diodes SMD Type Silicon Schottky Diode BAT68-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features For mixer applications in the VHF/UHF range +0.1 2.6-0.1 1.0max For high speed switching 0.375 +0.05 0.1-0.02 0.475 Absolute M axim um R atings Ta = 25
|
Original
|
BAT68-03W
OD-323
BAT68-03W
318 MARKING DIODE
|
PDF
|
smd transistor 1yc
Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Text: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice
|
OCR Scan
|
6N140A*
HCPL-675X
HCPL-570X
HCPL-177K
HCPL-573X
HCPL-673X
IL-PRF-38534
L-38534,
5964-2063E
5966-2799E
smd transistor 1yc
smd tr 1yc
smd marking ACH
marking code yc SMD Transistor
8302401E
marking code EA SMD Transistor
8302401EA
A13j
6n140a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m w m DF25SC6M o u tlin e 60V 25A Feature • SMD • SMD • P rrsm7 K 5 V v i S ’ Œ • P rrsm Rating • High lo Rating'Sm all-PKG Main Use • DC/DC n y jt — p • Switching Regulator • DC/DC Converter • m m .r - k .o A m s s
|
OCR Scan
|
DF25SC6M
150IIz
|
PDF
|
MARKING SOT23 jbs
Abstract: 45AP smd JS BAR74 smd diode BAR74 smd JS 3
Text: Diodes SMD Type Silicon Switching Diode BAR74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For high-speed switching applications +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05
|
Original
|
BAR74
OT-23
MARKING SOT23 jbs
45AP
smd JS
BAR74
smd diode BAR74
smd JS 3
|
PDF
|
diode tfk s 220
Abstract: TFK 490 tfk 123 7 TFK S
Text: Schottky Barrier Diode Twin Diode mtm DF25SC6M 60V m U nit-m m Package : STO -220 W eight 1.5g T y p P y K L l°-(ffl) 5A 10.2 Feature a <SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SM D • Tj=150°C • P OUTLINE rrsm 4.7 Main Use
|
OCR Scan
|
DF25SC6M
diode tfk s 220
TFK 490
tfk 123 7
TFK S
|
PDF
|
diods
Abstract: smd 123 smd diode Sod-123 smd transistor 123 1N4151W LL4151
Text: Diodes SMD Type SMALL SIGNAL DIODES 1N4151W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Silicon Epitaxial Planar Diode +0.1 3.7-0.1 Fast switching diods. This diods is also available in other case styles including: 0.50
|
Original
|
1N4151W
OD-123
OD-123
1N4151W
LL4151.
100MHz,
D-123)
diods
smd 123
smd diode Sod-123
smd transistor 123
LL4151
|
PDF
|
SMD LED 5630
Abstract: led smd 5630 LED 5630 smd 5630 smd LED smd 2 led 5630 5630 LED smd smd led 5630 technical 7D smd s7d smd PL-563X
Text: W hpX HEW LETT mUHM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6 N 134* 81028 H C PL-563X H C PL-663X H C PL-565X 5 9 6 2 -9 8 0 0 1 H C PL-268K H C PL-665X 5 9 6 2 -9 0 8 5 5 H C PL-560X *See matrix for available extensions.
|
OCR Scan
|
PL-563X
PL-663X
PL-565X
PL-268K
PL-665X
PL-560X
IL-PRF-38534
L-38534,
HCPL-565X
MIL-PRF-38534
SMD LED 5630
led smd 5630
LED 5630 smd
5630 smd LED
smd 2 led 5630
5630 LED smd
smd led 5630 technical
7D smd
s7d smd
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Whß% H E W L E T T mLEM P A C K A R D Hermetically Sealed, Very High Speed, Logic Gate Optocouplers HCPL-643X 5962-89571 HCPL-540X* 5962-89570 HCPL-543X Technical Data *See m atrix for available extensions. F eatu res • D ual M arked w ith D ev ice P art N um ber and DSCC
|
OCR Scan
|
HCPL-540X*
HCPL-543X
HCPL-643X
IL-PRF-38534
L-38534,
54AS1000)
5965-3004E
5968-0405E
|
PDF
|
MARKING SMD 43t
Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Text: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,
|
OCR Scan
|
S12AS4
waveli50HÂ
C59SE
J532-1)
MARKING SMD 43t
43t SMD
smd 43t
a13g
smd 2au
smd marking 9T
smd diode marking JC
DIODE marking VU
49LC
AI 186 N
|
PDF
|
smd rf transistor marking
Abstract: smd transistor js BAR60 BAR61
Text: Diodes SMD Type Silicon PIN Diodes BAR60;BAR61 Unit: mm Features RF switch RF attenuator for frequencies above 10 MHz Absolute M axim um R atings T a = 25 P aram eter R everse voltage Forward current Total power dissipation, T S 65 N ote 1 S ym bol V alue
|
Original
|
BAR60
BAR61
BAR60
smd rf transistor marking
smd transistor js
BAR61
|
PDF
|
SMD 100 6n cap
Abstract: smd transistor marking 6n SMD TRANSISTOR MARKING 6C
Text: Wißt H E W L E T T mLfïM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N 134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X :'See m atrix for available extensions. F eatu res
|
OCR Scan
|
HCPL-563X
HCPL-663X
HCPL-268K
HCPL-665X
HCPL-560X
MIL-PRF-38534
QML-38534,
6N137,
HCPL-2601,
HCPL2630/-31
SMD 100 6n cap
smd transistor marking 6n
SMD TRANSISTOR MARKING 6C
|
PDF
|
MARKING l7
Abstract: sot-23 diode L9 transistor sot-23 marking L8 BAR14 BAR15 BAR16
Text: Diodes SMD Type Silicon PIN Diodes BAR14;BAR15;BAR16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 RF attenuator for frequencies above 10 MHz 0.55 RF switch +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low distortion factor +0.05 0.1-0.01
|
Original
|
BAR14
BAR15
BAR16
OT-23
BAR14
BAR15
MARKING l7
sot-23 diode L9
transistor sot-23 marking L8
BAR16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time
|
Original
|
BYG23M
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time
|
Original
|
BYG23M
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time
|
Original
|
BYG23M
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-214AC
2011/65/EU
2002/95/EC.
2011/65/EU.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CS1107 Single Relay Driver IC Description This ASIC provides u p to 350mA of drive current for driving a relay. On-chip diagnostic features include open and short circuit detection in the on state, duty cycle current limit control, and therm al shutdown. Faults are reported on the Fault
|
OCR Scan
|
CS1107
350mA
CS1107DR8
CS1107D8
|
PDF
|
bas16ld
Abstract: No abstract text available
Text: BAS16LD Single high-speed switching diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device SMD plastic package with visible and solderable side pads.
|
Original
|
BAS16LD
OD882D
AEC-Q101
771-BAS16LD315
BAS16LD
|
PDF
|
