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    SMD DK QK Search Results

    SMD DK QK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD DK QK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking HT1

    Abstract: SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga
    Text: 576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 smd transistor marking HT1 SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    RLDRAM mt49h

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MT49H16M18

    MICRON BGA PART MARKING

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M36

    MT49H32M18C

    Abstract: No abstract text available
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MT49H32M18C

    MICRON BGA PART MARKING

    Abstract: amd catalog MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MICRON BGA PART MARKING amd catalog MT49H32M18C

    MICRON BGA PART MARKING

    Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b59/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C

    smd code marking x18

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd code marking x18 MT49H16M36

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor ATV06B5V0-G Thru. ATV06B441-G Working Peak Reverse voltage: 5.0 ~ 440Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -600W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty cycle : 0.01%.


    Original     		PDF ATV06B5V0-G ATV06B441-G 440Volts SMB/DO-214AA -600W AEC-Q101. DO-214AA, 5AQW-BTV02 DO-214AA DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor TV06B5V0-HF Thru. TV06B441-HF Working Peak Reverse voltage: 5.0 ~ 440Volts Power Dissipation: 600 Watts RoHS Device Halogen free Features SMB/DO-214AA -Glass passivated chip. -600W peak pulse power capability with a 10/1000 s


    Original     		PDF TV06B5V0-HF TV06B441-HF 440Volts SMB/DO-214AA -600W DO-214AA, QW-JTV02 DO-214AA DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor TV06B5V0-G Thru. TV06B441-G Working Peak Reverse voltage: 5.0 ~ 440Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -600W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty cycle : 0.01%.


    Original     		PDF TV06B5V0-G TV06B441-G 440Volts SMB/DO-214AA -600W DO-214AA, QW-BTV02 DO-214AA DO-214AA