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    SMD LNW Search Results

    SMD LNW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD LNW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Bridge Diode SMD/DIP •外観図 OUTLINE LN1WBA60 Unit : mm Package:1W(SMD) 10.2 600V 1.1A ④ ① 品名略号 Type No. LNWB 6030 • 小型 SMDパッケージ または • 小型 DIP パッケージ ①+ ③~ ②∼ 6.2 特長 • 低ノイズ


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    LN1WBA60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bridge Diode Low Noise type Dual In-Line Package OUTLINE LN1WBA60 Package 1W Unit : mm Weight : 0.46g typ. SMD 10.5 ④ 600V 1.1A • • ① 品名略号 Type No. DIP LNWB 6030 ①+ ③~ ②∼ 6.5 ③ 級表示(例) Class Feature ④− ② ロット記号(例)


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    LN1WBA60 J534-1 PDF

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


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    S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet PDF

    SN74AVCA164245DGG

    Abstract: transistor cl100 C26 A410 2012 B 100NF samsung S3C2413 XF10B11A-COMBO1-4S smd A12 5PIN KS24C080C SMD 5pin E2 S14423DY
    Text: 5 4 3 2 1 SMDK2413 Board S3C2413 Evaluation Board PCB Revision Date Description Ver : 1.0 (20050720) July 20, 2005 First release version (Production for Customer) Ver : 1.1 (20050805) Aug 05, 2005 1. Sheet 10 : Connect U22(CF050-YAMAICHI) Pin44(ATA_NDMARK) with R87


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    SMDK2413 S3C2413 CF050-YAMAICHI) Pin44 SN74LVC8T345-- SN74AVCA16425DGG) CON90 SN74LVXC8T245 SN74AVCA164245DGG) SN74AVCA16425DOG) SN74AVCA164245DGG transistor cl100 C26 A410 2012 B 100NF samsung XF10B11A-COMBO1-4S smd A12 5PIN KS24C080C SMD 5pin E2 S14423DY PDF

    S3C2412

    Abstract: S3C2412X OSC-HALF 12Mhz tcon100 Samsung s3c2412 c2061 C26 A410 SN74AVCA164245DGG u61c SMDK2412
    Text: 5 4 3 2 1 SMDK2412 Board S3C2412 Evaluation Board PCB Revision Date Description Ver : 1.0 (20050720) July 20, 2005 First release version (Production for Customer) Ver : 1.1 (20050805) Aug 05, 2005 1. Sheet 10 : Connect U22(CF050-YAMAICHI) Pin44(ATA_NDMARK) with R87


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    SMDK2412 S3C2412 CF050-YAMAICHI) Pin44 SN74LVC8T345-- SN74AVCA16425DGG) CON90 SN74LVXC8T245 SN74AVCA164245DGG) SN74AVCA16425DOG) S3C2412X OSC-HALF 12Mhz tcon100 Samsung s3c2412 c2061 C26 A410 SN74AVCA164245DGG u61c PDF

    lnwb

    Abstract: 603-D diode smd marking BUF LN1WBA60
    Text: Bridge Diode 低ノイズタイプ デュアルインライン型 Low Noise type Dual In-Line Package •外観図 OUTLINE LN1WBA60 Unit : mm Weight : 0.46g (typ.) Package:1W(SMD) 10.5 600V 1.1A ④ ① 品名略号 Type No. 特長 • 低ノイズ


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    LN1WBA60 25unless J534-1 layer35 lnwb 603-D diode smd marking BUF LN1WBA60 PDF

    LNWB

    Abstract: 603-D LN1WBA60 marking 6 bridge diode
    Text: Bridge Diode 低ノイズタイプ デュアルインライン型 Low Noise type Dual In-Line Package •外観図 OUTLINE LN1WBA60 Unit : mm Weight : 0.46g (typ.) Package:1W(SMD) 10.5 600V 1.1A ④ ① 品名略号 Type No. 特長 • 低ノイズ


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    LN1WBA60 25unless 1mst10msTj LNWB 603-D LN1WBA60 marking 6 bridge diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Bridge Diode 低ノイズタイプ デュアルインライン型 Low Noise type Dual In-Line Package •外観図 OUTLINE LN1WBA60 Unit : mm Weight : 0.46g (typ.) Package:1W(SMD) 10.5 600V 1.1A ④ ① 品名略号 Type No. 特長 • 低ノイズ


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    LN1WBA60 PDF

    TM-10160

    Abstract: TM10160 TM1060 xd405 CM06151G6 LBTM005100NS-V00 CM60130GK LBTM010500N7-V0 CM35500GK LPT211205N
    Text: AMORPHOUS CHOKE COILS CAT. No. E1008E ?List of products Series Major uses Miniatur- Thin ization Type Low loss Low cost Large capacity Classification Standard Specifications & Coil Series Guide CM Switching mode power supplies DC-DC converter Normal mode line filter


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    E1008E LNC462725G LNC462715G LNC372310G LNC251510G LNC221310G LNC191305G LNC211205G LNC150905G LNC130805G TM-10160 TM10160 TM1060 xd405 CM06151G6 LBTM005100NS-V00 CM60130GK LBTM010500N7-V0 CM35500GK LPT211205N PDF

    AC toroidal choke

    Abstract: TM10160 EI40 transformer TM-10160 Chemi-Con DATE Coding LBTM020100N6-V0E FM2010 NANOCRYSTALLINE nippon chemi-con date code TM1060
    Text: AMORPHOUS/DUST CHOKE COILS AMORPHOUS / DUST CHOKE COILS CAT. No. E1008K ?List of products Series Major uses Miniatur- Thin ization type Low loss Low cost Large capacity Classification Standard Specifications & Coil Series Guide CM Switching mode power supplies


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    E1008K AC toroidal choke TM10160 EI40 transformer TM-10160 Chemi-Con DATE Coding LBTM020100N6-V0E FM2010 NANOCRYSTALLINE nippon chemi-con date code TM1060 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    TM-10160

    Abstract: JLH 94 V0 TM10160 LBTM005750N5-V0E FM2010 F322015MK 1D2 SMD Ei40 10T LNC181210G LNC251515G
    Text: アモルファス/ダスト チョークコイル CAT.No.1008O 目 次 製品検索 製品一覧表 製品体系図 一般規格(標準トロイダルコイル) 使用上の注意 製品ガイド アクセサリー 信頼性試験条件 カスタム仕様設計条件


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    1008O 2095RH 2080RH 20kHz500kHz TM-10160 JLH 94 V0 TM10160 LBTM005750N5-V0E FM2010 F322015MK 1D2 SMD Ei40 10T LNC181210G LNC251515G PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


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    HX84050 1x106 1x101 1x109 0GD1755 PDF

    501D

    Abstract: RO25 meggitt resistors Meggitt CGS Meggitt Electronic Components R018 0805 SMD resistors derating
    Text: Is Or iu. o § MEOGITT CGS H IG H jvO L T A G E R E S IS T O R S H IO H V A L U E R E S IS T O R S H IG H jP O W E R R E S IS T O R S A L U M IN IU M C L A D R E S IS T O R S C U R R E N T S E N S E R E S IS T O R S SMD Low Ohmic - Current Sense Resistors


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    00-Jew-9i. 96ZI-0 0IN0dl0313 11I903W 501D RO25 meggitt resistors Meggitt CGS Meggitt Electronic Components R018 0805 SMD resistors derating PDF

    transistor lnw smd

    Abstract: No abstract text available
    Text: Pulse-load Battery Monitor D escription T h e C S -2 5 1 6 is d e s ig n e d fo r u s e in b a t­ te ry p o w e re d m e d ic a l, s e c u r ity , o r e n v ir o n m e n ta l s y s te m s w h e r e p r io r n o tific a tio n o f im p e n d in g p o w e r


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    CS-2516 CS-2516N8 CS-2516D8 transistor lnw smd PDF

    SMD MARKING CODE C72

    Abstract: A 434 RF Receiver TRANSMITTER PAIR " QML-38535 SMD D234 dscc 10011 A 434 RF Receiver TRANSMITTER PAIR D312 1015 CY7B933-LMB qml38535 2T43
    Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 19 20 21


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    5962-E027-97 TDD470Ã T0Q47GÃ SMD MARKING CODE C72 A 434 RF Receiver TRANSMITTER PAIR " QML-38535 SMD D234 dscc 10011 A 434 RF Receiver TRANSMITTER PAIR D312 1015 CY7B933-LMB qml38535 2T43 PDF

    QML-38535

    Abstract: 5962R9584502VYC XVHC MIL-PRF-38535A GDIP1-T28 5962H9584502VZC 5962R9584501 5962-95845 5962R9584501VZC 5962h9584502vxc
    Text: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA Add case outline U Add note 2/ to sheet 2. Add note 5/ to table IA Add note 6/ to tyVHWL Make corrections to notes on sheets 11 and 13. Add note 3 to figure 3. Add note 2 to figure 5, Read Cycle. Add note 6 to figure 5, Write Cycle. Make correction to note 5 of figure 6


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    PDF

    ASTM E235

    Abstract: wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR
    Text: REVISIO N S LTR D ESC R IPTIO N D ATE YR-MO-DA A P P R O V ED Update boilerplate. Add devices 13 and 14. Add case outlines P and 9. Add C A G E 52088 as source of supply for devices 13 and 14. Editorial changes


    OCR Scan
    5962-R259-94. 5962-R097-96 5962-R122-96 96-0endor ASTM E235 wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR PDF

    A1020 Y

    Abstract: smd transistor E5 GHL 88
    Text: Military Field Programmable Gate Arrays Features A C T 3 Features • Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family • System Performance to i( MHz over Military Temperature


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    20-pin A1020 Y smd transistor E5 GHL 88 PDF

    transistor SMD 1p4

    Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
    Text: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab


    OCR Scan
    TQ-220AB C67078-A5007-A2 Q67060-S6202-A2 E3043 Q67060-S6202-A4 GPT05165 O-22QAB/5, E3062 BTS432E2 E3062A transistor SMD 1p4 KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A PDF

    ic ntp- 3000

    Abstract: PEB 2060N PEB2060 ITD00647 ITT00649 THL3000 siemens FLH PEB2050
    Text: C IC M C M C J l t l Y I t l ì l J Signal Processing Codec Filter SICOFI PEB 2060 Features CMOS 1C • Single chip codec and filter • Band limitation according to all CCITT and AT & T recommendations • Digital Signal Processing techniques • Digital voice transmission


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    512-kHz-SLD-Bus ic ntp- 3000 PEB 2060N PEB2060 ITD00647 ITT00649 THL3000 siemens FLH PEB2050 PDF

    tech rh 024c

    Abstract: 0000040BH P23Q qfp 136 PH4148 zx 0408 pdro
    Text: • D ESC R IP T IO N The MB91103 is a standard single-chip microcontroller constructed around the 32-bit R IS C CPU FR20 Series core with abundant I/O resources and bus control functions optimized tor high-pertormance/high-speed CPU processing for embedded controller applications. To support the vast memory space accessed by the 32-bit


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    MB91103 32-bit FR20CPU F9707 tech rh 024c 0000040BH P23Q qfp 136 PH4148 zx 0408 pdro PDF