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    SMD MARKING S2 Search Results

    SMD MARKING S2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING S2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FAIRCHILD SMD MARKING

    Abstract: 1N4148WS Small Signal Diodes 1N4448WS fairchild smd marking code 1N914BWS smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • • • • • • • Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 General Purpose Diodes Fast switching Device TRR < 4.0 ns Very Small and Thin SMD package Moisture Level Sensitivity 1


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS 1N4148WS 1N4448WS OD-323F 1N914BWS FAIRCHILD SMD MARKING Small Signal Diodes fairchild smd marking code smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    smd marking g12

    Abstract: smd marking g24
    Text: SMD TVS Arrays Multiple Terminals Part No. Marking Code SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) Peak Max Power Min. Dissssipa- Reverse Breakdown Stand-Off tion @ Voltage Voltage 8x20µs Peak Pulse Current Off-State Capacitance Pinout Package


    Original     		PDF TVG12RVAWT TVG03VAWS TVG05VAWS TVG12VAWS TVG15VAWS TVG24VAWS TVG36VAWS TVG12RVAWS TVG24RVAWS TVT12LCW smd marking g12 smd marking g24

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    Untitled

    Abstract: No abstract text available
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes Features • • • • • • • Device Marking Code General Purpose Diodes Fast Switching Device TRR < 4.0ns Very Small and Thin SMD Package Moisture LevelSensitivity 1 Pb-free Version and RoHS Compliant


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS 1N4148WS 1N4448WS OD-323

    FAIRCHILD SMD MARKING

    Abstract: fairchild smd marking code 1n4148ws 1N4448WS fairchild diode smd code 1N914 FAIRCHILD DIODE fairchild make diodes list SOD323F SOD323 1N4148WS
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes Features • • • • • • • Device Marking Code General Purpose Diodes Fast Switching Device TRR < 4.0ns Very Small and Thin SMD Package Moisture Level Sensitivity 1 Pb-free Version and RoHS Compliant


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS OD-323 FAIRCHILD SMD MARKING fairchild smd marking code fairchild diode smd code 1N914 FAIRCHILD DIODE fairchild make diodes list SOD323F SOD323 1N4148WS

    marking code p60 SMD

    Abstract: TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4
    Text: Schottky Barrier Diodes Two Terminals Part No. TSD013-730F3 Marking Code Max. Average Rectified Current lo(AV) (mA) Q Peak Repetitive Reverse Voltage SMD Schottky Max. Forward Voltage @ IF Max. Reverse Current @ VR R TSD013-730WU TSD013L-720WU TSD023-54WU


    Original     		PDF TSD013-730F3 BAS85 LL5711 LL6263 LL103C LL103B LL103A LL101C LL101B LL101A marking code p60 SMD TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4

    1g smd

    Abstract: SPK-F550 Ultrasonic Resonator
    Text: SAW FILTER SMD TYPE SPK-F550 SPK ELECTRONICS CO., LTD. 1.Package Ceramic package QCC8C Dimensions in mm, approx.weight 0.1g Pin configuration 2 input 6 output 4,8 Ground case 2.Marking Rugular 2.1.Center Frequency (MHz): 433.92 3.Performance 3.1 Absolute Maximum Ratings


    Original     		PDF SPK-F550 1g smd SPK-F550 Ultrasonic Resonator

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    dh 321

    Abstract: SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883
    Text: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


    Original     		PDF MT5C2565 MIL-STD-883 28-Pin T5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX 5962-8952405XX dh 321 SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883

    Untitled

    Abstract: No abstract text available
    Text: COPAL ELECTRONICS SLIDE SWITCHES SMD RoHS compliant CJS INTERNAL STRUCTURE ① ② ⑤ ③ ⑥ ④ Part name •FEATURES ● RoHS compliant ● Easy to set slider with line marking ● With neutral detent type lined up to 1 pole 2contacts switch ● Compatible with most automatic pick & place machinery


    Original     		PDF UL-94V-0 CJS-1200TAâ 1200TBâ 1201TAâ 1201TBâ CJS-1200B1)

    Untitled

    Abstract: No abstract text available
    Text: COPAL ELECTRONICS SLIDE SWITCHES SMD RoHS compliant CJS INTERNAL STRUCTURE ① ② ⑤ ③ ⑥ ④ Part name •FEATURES ● RoHS compliant ● Easy to set slider with line marking ● With neutral detent type lined up to 1 pole 2contacts switch ● Compatible with most automatic pick & place machinery


    Original     		PDF UL-94V-0 CJS-1200TAâ 1200TBâ 1201TAâ 1201TBâ CJS-1200B1)

    43211

    Abstract: MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256
    Text: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


    Original     		PDF MT5C2565 MIL-STD-883 28-Pin 5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX 5962-8952405XX 43211 MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256

    CJS-1200TA1

    Abstract: CJS-1200A1 CJS-1201A CJS-1200B smd marking diode pack smd transistor marking PA SMD MARKING CODE catalog CJS-1200TA CJS12 1200TA
    Text: COPAL ELECTRONICS SLIDE SWITCHES SMD RoHS compatible CJS INTERNAL STRUCTURE 1 2 5 3 6 4 Part name • FEATURES ● Lead-free soldering ● Easy to set slider with line marking ● With neutral detent type lined up to 1 pole 2contacts switch ● Compatible with most automatic pick & place machinery


    Original     		PDF UL-94V-0 CJS-1200TA, 1200TB, 1201TA, 1201TB CJS-1200B1) CJS-1200TA1 CJS-1200A1 CJS-1201A CJS-1200B smd marking diode pack smd transistor marking PA SMD MARKING CODE catalog CJS-1200TA CJS12 1200TA

    MT5C2565EC-25

    Abstract: No abstract text available
    Text: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access


    Original     		PDF MT5C2565 MIL-STD-883 28-Pin C-25/883C MT5C2565C-35/883C MT5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX MT5C2565EC-25

    smd 5 pin marking a9

    Abstract: No abstract text available
    Text: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access


    Original     		PDF MT5C2565 MIL-STD-883 28-Pin C-25/883C MT5C2565C-35/883C MT5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX smd 5 pin marking a9

    CJS-1200TA1

    Abstract: JIS C 0806 CJS-1200TA2 CJS-1200TB
    Text: COPAL ELECTRONICS SLIDE SWITCHES SMD RoHS compliant CJS INTERNAL STRUCTURE 1 2 5 3 6 4 Part name • FEATURES ● Lead-free soldering ● Easy to set slider with line marking ● With neutral detent type lined up to 1 pole 2contacts switch ● Compatible with most automatic pick & place machinery


    Original     		PDF UL-94V-0 CJS-1200TA, 1200TB, 1201TA, 1201TB CJS-1200B1) CJS-1200TA1 JIS C 0806 CJS-1200TA2 CJS-1200TB

    smd diode code g3

    Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
    Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6

    smd diode S6

    Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6

    smd diode S4

    Abstract: No abstract text available
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 100-01X1-SMD 220-004P3 20070906c smd diode S4

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		PDF BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99