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    SMD TRANSISTOR 1E Search Results

    SMD TRANSISTOR 1E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 1E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		PDF BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a

    smd transistor marking BL

    Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL smd transistor marking 1E smd transistor .1G CSC2712 ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF CSC2712 OT-23 CSC2712Y CSC2712GR CSC2712BL C-120 ts 4141 TRANSISTOR smd

    smd transistor marking BL

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

    smd transistor marking BL

    Abstract: MARKING 1F SMD Transistor 1f transistor marking 1f CSC2712 CSC2712BL CSC2712GR CSC2712Y
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL MARKING 1F SMD Transistor 1f transistor marking 1f CSC2712

    smd diode marking Ja sot

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 smd diode marking Ja sot

    MOSFET TRANSISTOR SMD MARKING CODE

    Abstract: MOSFET marking smd
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 MOSFET TRANSISTOR SMD MARKING CODE MOSFET marking smd

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature


    Original     		PDF BC846AW-G BC848CW-G BC846W BC847W BC848W OT-323 OT-323, MIL-STD-750, QW-BTR35 BC846AW-G TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28

    smd transistor marking 1B

    Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter


    Original     		PDF BC846W BC847W BC848W BC846W BC847W BC846AW BC846BW BC847AW smd transistor marking 1B SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g

    PMPB40SNA

    Abstract: transistor smd 1E
    Text: PMPB40SNA 60 V N-channel Trench MOSFET 28 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101 PMPB40SNA transistor smd 1E

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    03AF6

    Abstract: No abstract text available
    Text: PMZB790SN 60 V, single N-channel Trench MOSFET 14 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB790SN DFN1006B-3 OT883B) 03AF6

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Transistors smd 1G

    Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
    Text: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications


    Original     		PDF KC846A B/KC847A C/KC848A BC846A B/BC847A C/BC848A OT-23 KC846 KC847 KC848 Transistors smd 1G SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23

    A08K

    Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4


    Original     		PDF KO3416 OT-23-3 A08K a08k transistor SMD TRANSISTOR mosfet marking pd

    BC847 smd

    Abstract: smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD Transistor 1f SMD TRANSISTOR MARKING 1B 1F transistor smd SMD Transistor BC847 smd transistor footprint smd transistor marking 1h 1D smd transistor
    Text: Transistors IC SMD Type NPN General Purpose Transistor BC846,BC847,BC848 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 65 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF BC846 BC847 BC848 OT-23 BC846 BC847 BC846A BC846B BC847 smd smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD Transistor 1f SMD TRANSISTOR MARKING 1B 1F transistor smd SMD Transistor BC847 smd transistor footprint smd transistor marking 1h 1D smd transistor

    CL-201IR

    Abstract: No abstract text available
    Text: 表面実装型チップフォトトランジスタ CPT-230 シリーズ Surface Mountable Chip Photo-transistor CPT-230 Series 特徴／ Features 1. Developed as a chip type SMD phototransistor for both reverse and top surface mounting 2. Small and square size, dimensions：


    Original     		PDF CPT-230 CPT-230 CL-201IR 20mW/Sr 10mW/Sr CL-201IR

    CL-201IR

    Abstract: CPT-290
    Text: 表面実装型チップフォトトランジスタ CPT-290 シリーズ Surface Mountable Chip Photo-transistor CPT-290 Series 特徴／ Features 1. Developed as a chip type SMD phototransistor for both reverse and top surface mounting 2. Small and square size, dimensions：


    Original     		PDF CPT290 CPT290 CL201IR CL-201IR 20mW/Sr 10mW/Sr CL-201IR CPT-290

    CL-201IR

    Abstract: No abstract text available
    Text: 表面実装型チップフォトトランジスタ CPT-184 シリーズ Surface Mountable Chip Photo-transistor CPT-184 Series 特徴／ Features 1. Developed as a chip type SMD phototransistor for both right-angle and upright uses 2. Small and square size, dimensions：


    Original     		PDF CPT-184 CPT-184 20mW/Sr 10mW/Sr CL-201IR CL-201IR

    CL-201IR

    Abstract: d-101-00
    Text: 表面実装型チップフォトトランジスタ CPT-182 シリーズ Surface Mountable Chip Photo-transistor CPT-182 Series 特徴／ Features 1. Developed as a chip type SMD photo- 1. チップ型フォトトランジスタで上面 及び側面受光可能。


    Original     		PDF CPT-182 CPT-182 20mW/Sr 10mW/Sr CL-201IR CL-201IR d-101-00

    transistor smd LC 77

    Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
    Text: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a


    OCR Scan     		PDF BLT81 OT223 OT223 MAM043- 7110fl2b MRC089 711Dfl2b S0T223. 711002b transistor smd LC 77 smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901

    transistor A25 SMD

    Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
    Text: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo­ transistor for both reverse and top


    OCR Scan     		PDF CPT-290 100ST2 L-201IR CL-201 transistor A25 SMD transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314