MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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Untitled
Abstract: No abstract text available
Text: SO T2 23 PBSS4360Z 60 V, 3 A NPN low VCEsat BISS transistor 26 February 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBSS4360Z
OT223
SC-73)
PBSS5360Z.
AEC-Q101
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Text: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1115S
1440C
2SC5700
2SC5757
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
SMD MARKING CODE sg
2SC5700
2SC5757
HTT1115S
MARKING CODE SMD IC
DSA003640
Hitachi DSA003640
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smd transistor marking SL6
Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Text: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor
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HTT1213S
ADE-208-1448
2SC5700
D-85622
D-85619
smd transistor marking SL6
SMD MARKING CODE hitachi
HTT1213S
marking code s21 SMD Transistor
marking code e2 SMD Transistor
SMD MARKING CODE sg
2SC5700
Hitachi transistor
MARKING CODE SMD IC
TRANSISTOR SMD fr
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2SC5849
Abstract: 2SC5700 HTT1127E Transistors smd mark code 15 S2127 HITACHI SMD TRANSISTORS
Text: HTT1127E Silicon NPN Epitaxial Twin Transistor ADE-208-1540 Z Rev.0 Nov. 2002 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700
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HTT1127E
ADE-208-1540
2SC5700
2SC5849
D-85622
D-85619
2SC5849
2SC5700
HTT1127E
Transistors smd mark code 15
S2127
HITACHI SMD TRANSISTORS
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smd transistor 2a
Abstract: 5a SMD Transistor
Text: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1
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3DD13007
O-263
smd transistor 2a
5a SMD Transistor
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Untitled
Abstract: No abstract text available
Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA114TMB
DFN1006B-3
OT883B)
PDTC114TMB.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
OT223
OT223
MAM043
SCDS48
127061/1200/02/pp12
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R Y SMD TRANSISTOR
Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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OCR Scan
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BLT13
OT96-1
MAM227
OT96-1.
R Y SMD TRANSISTOR
2L smd transistor
AT 11-S-i
smd transistor 2T
SOT96-1
BLT13
D102
smd transistor nc 61
NCR100
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Untitled
Abstract: No abstract text available
Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor
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HTT1115E
REJ03G0838-0200
ADE-208-1439A)
2SC5700
2SC5757
PXSF0006LA-A
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TRANSISTOR SMD MARKING CODE 702
Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor
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HTT1115E
REJ03G0838-0200
ADE-208-1439A)
2SC5700
2SC5757
PXSF0006LA-A
TRANSISTOR SMD MARKING CODE 702
702 TRANSISTOR smd
HTT1115EFTL-E
2SC5700
2SC5757
HTT1115E
MARKING CODE SMD IC
transistor smd marking KA
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transistor smd marking KA
Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor
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HTT1127E
REJ03G0839-0100
ADE-208-1540)
2SC5700
2SC5849
PXSF0006LA-A
transistor smd marking KA
702 TRANSISTOR smd
2SC5700
2SC5849
HTT1127E
HTT1127ERTL-E
smd code marking for japanese
MARKING CODE SMD IC
HTT1127ERTL
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transistor smd marking KA
Abstract: No abstract text available
Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor
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HTT1127E
REJ03G0839-0100
ADE-208-1540)
2SC5700
2SC5849
PXSF0006LA-A
transistor smd marking KA
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702 TRANSISTOR smd
Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor
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HTT1129E
REJ03G0840-0200
ADE-208-1541A)
2SC5849
2SC5872
PXSF0006LA-A
702 TRANSISTOR smd
transistor smd marking KA
2sc5872
TRANSISTOR SMD MARKING CODE 702
2SC5849
HTT1129E
HTT1129EZTL-E
MARKING CODE SMD IC
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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Original
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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biss 0001
Abstract: No abstract text available
Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PBSS2515MB
OT883B
PBSS3515MB.
AEC-Q101
biss 0001
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BISS 0001
Abstract: No abstract text available
Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.
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PBSS2515MB
OT883B
PBSS3515MB.
AEC-Q101
BISS 0001
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA123YMB
DFN1006B-3
OT883B)
PDTC123YMB
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDTC124
Abstract: PDTC124XMB
Text: 83B PDTC124XMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC124XMB
DFN1006B-3
OT883B)
PDTA124XMB.
AEC-Q101
PDTC124
PDTC124XMB
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Untitled
Abstract: No abstract text available
Text: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS306PZ
OT223
SC-73)
PBSS306NZ.
AEC-Q101
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PDTC144V
Abstract: No abstract text available
Text: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA144VMB
DFN1006B-3
OT883B)
PDTC144VMB.
AEC-Q101
PDTC144V
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PDTA114TMB
Abstract: SMD TRANSISTOR MARKING 2X TRANSISTOR SMD 2X K
Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTA114TMB
DFN1006B-3
OT883B)
PDTC114TMB.
AEC-Q101
PDTA114TMB
SMD TRANSISTOR MARKING 2X
TRANSISTOR SMD 2X K
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S306PZ
Abstract: No abstract text available
Text: SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat BISS transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS306PZ
OT223
SC-73)
PBSS306NZ.
AEC-Q101
S306PZ
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