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    SMD TRANSISTOR 312 Search Results

    SMD TRANSISTOR 312 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PBLS4003D

    Abstract: tsop6 marking 312
    Text: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS4003D OT457 SC-74) PBLS4003D tsop6 marking 312

    PBLS4005D

    Abstract: No abstract text available
    Text: PBLS4005D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


    Original     		PDF PBLS4005D OT457 SC-74) PBLS4005D

    PBLS4004D

    Abstract: tsop6 marking 312
    Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS4004D OT457 SC-74) PBLS4004D tsop6 marking 312

    PBLS4001D

    Abstract: No abstract text available
    Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 02 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


    Original     		PDF PBLS4001D OT457 SC-74) PBLS4001D

    PBLS4003D

    Abstract: 15096
    Text: PBLS4003D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


    Original     		PDF PBLS4003D OT457 SC-74) PBLS4003D 15096

    PBLS4002D

    Abstract: No abstract text available
    Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


    Original     		PDF PBLS4002D OT457 SC-74) PBLS4002D

    006A

    Abstract: PBLS4004D SC74 marking 345
    Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


    Original     		PDF PBLS4004D OT457 SC-74) 006A PBLS4004D SC74 marking 345

    PBLS4005D

    Abstract: No abstract text available
    Text: PBLS4005D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS4005D OT457 SC-74) PBLS4005D

    PBLS4002D

    Abstract: No abstract text available
    Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS4002D OT457 SC-74) PBLS4002D

    PBLS4001D

    Abstract: No abstract text available
    Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS4001D OT457 SC-74) PBLS4001D

    PBSS304ND

    Abstract: PBSS304PD tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ
    Text: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS304PD OT457 SC-74) PBSS304ND. PBSS304PD PBSS304ND tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ

    Untitled

    Abstract: No abstract text available
    Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160T O-236AB) PBSS4160T. BCP52 BCX52 PBSS5160T

    SMD transistor MARKING CODE 312

    Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
    Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160T O-236AB) PBSS4160T. BCP52 BCX52 PBSS5160T SMD transistor MARKING CODE 312 SOT23-4 MARKING U6 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160

    smd transistor marking AJ

    Abstract: smd transistor AJ PBSS304ND PBSS304PD SMD transistor MARKING CODE 312 smd ic marking AJ philips motor control transistor smd marking AJ
    Text: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 01 — 30 May 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS304PD OT457 SC-74) PBSS304ND. PBSS304PD smd transistor marking AJ smd transistor AJ PBSS304ND SMD transistor MARKING CODE 312 smd ic marking AJ philips motor control transistor smd marking AJ

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB56EN DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65ENE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB120EPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZB350UPE DFN1006B-3 OT883B)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB75UPE DFN1010D-3 OT1215)

    NXP date code marking

    Abstract: a/NXP date code marking
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215)

    110N06L

    Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3 P-TO26 PG-TO220-3 110N06L 110N06L smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N diode smd 312

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A