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    SMD TRANSISTOR 4D Search Results

    SMD TRANSISTOR 4D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 4D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8540X SC-62) PBHV9040X. AEC-Q101

    4d SMD Transistor

    Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO


    Original     		PDF BC859W BC860W BC859W BC859W; BC860W; BC859BW; BC860BW; BC859CW; BC860CW 4d SMD Transistor 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    3N0625

    Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
    Text: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9


    Original     		PDF IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 IPP25N06S3-25 3N0625 BIPP25N06S3-25, 3N0625 INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon

    2n0303

    Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
    Text: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance


    Original     		PDF SPI80N03S2-03 SPP80N03S2-03 SPB80N03S2-03 SPP80N03S2-03 Q67040-S4247 Q67040-S4258 2N0303 Q67042-S4079 2n0303 INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		PDF IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		PDF IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03

    2n0404

    Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
    Text: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2


    Original     		PDF SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04 SPP80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 2n0404 ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 DSA003760

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING

    2N0807

    Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
    Text: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 SPP80N08S2-07 Q67040-S4263 Q67040-S4264 2N0807 Q67060-S6082 2N0807 Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 A410

    3N0607

    Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
    Text: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3-07 IPP80N06S3-07 IPB80N06S3-07 IPP80N06S3-07 3N0607 BIPP80N06S3-07, 3N0607 ANPS071E IPB80N06S3-07 IPI80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code

    2N0404

    Abstract: ANPS071E SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.4 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 BSPP80N04S2-04 BSPB80N04S2-04, 2N0404 ANPS071E SPB80N04S2-04 SPP80N04S2-04

    2n0404

    Abstract: ANPS071E SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 40 RDS on max. SMD version 3.4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 Q67040-S4260 2N0404 Q67040-S4257 BSPP80N04S2-04 BSPB80N04S2-04, 2n0404 ANPS071E SPB80N04S2-04 SPP80N04S2-04

    2n0605

    Abstract: d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.8 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 2N0605 Q67040-S4255 BSPP80N06S2-05, BSPB80N06S2-05 2n0605 d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05

    2n0404

    Abstract: 240 -TO263-3-2
    Text: SPP80N04S2-04 SPB80N04S2-04 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 40 V 3.4 mΩ 80 A P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP80N04S2-04 SPB80N04S2-04 SPB80N04S2-04 Q67040-S4260 Q67040-S4257 2N0404 2N0404 BSPP80N04S2-04 BSPB80N04S2-04, 240 -TO263-3-2

    D67A

    Abstract: 2n08l07 67a smd 2N08L07 POWER smd diode 67A 2n08l 2n08l07 marking ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 2N08L07 Q67060-S6016 BSPP80N08S2L-07 BSPB80N08S2L-07, D67A 2n08l07 67a smd 2N08L07 POWER smd diode 67A 2n08l 2n08l07 marking ANPS071E SPB80N08S2L-07 SPP80N08S2L-07

    2N03L06

    Abstract: ANPS071E SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 SPB80N03S2L06 INFINEON PART MARKING to263 2N03L
    Text: SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 5.9 mΩ ID 80 A • Logic Level • Low On-Resistance RDS(on) P- TO262 -3-1 P- TO263 -3-2


    Original     		PDF SPI80N03S2L-06 SPP80N03S2L-06 SPB80N03S2L-06 SPP80N03S2L-06 Q67042-S4088 Q67042-S4089 2N03L06 Q67042-S4092 2N03L06 ANPS071E SPB80N03S2L-06 SPI80N03S2L-06 SPB80N03S2L06 INFINEON PART MARKING to263 2N03L

    ANPS071E

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
    Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP100N04S2L-03 SPB100N04S2L-03 SPP100N04S2L-03 Q67060-S6038 PN04L03 SPB100N04S2L-03 Q67060-S6039 BSPP100N04S2L-03 BSPB100N04S2L-03, ANPS071E PN04L03

    2N04L03

    Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE
    Text: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP80N04S2L-03 SPB80N04S2L-03 Q67040-S4261 2N04L03 Q67040-S4262 BSPP80N04S2L-03 BSPB80N04S2L-03, 2N04L03 ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE

    2n0605

    Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 2N0605 Q67040-S4255 BSPP80N06S2-05, BSPB80N06S2-05 2n0605 BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking

    ANPS071E

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03
    Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP100N04S2L-03 SPB100N04S2L-03 SPP100N04S2L-03 Q67060-S6038 SPB100N04S2L-03 Q67060-S6039 PN04L03 BSPP100N04S2L-03 BSPB100N04S2L-03, ANPS071E