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    SMD TRANSISTOR 5 LEAD Search Results

    SMD TRANSISTOR 5 LEAD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 5 LEAD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


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    PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PDF PXTA42 SC-62) PXTA92. AEC-Q101

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PDF PXTA42 SC-62) PXTA92. AEC-Q101 TRANSISTOR SMD MARKING CODE 1d SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code

    2d SMD PNP TRANSISTOR

    Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


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    PDF PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: No abstract text available
    Text: PBSS5560PA 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    PDF PBSS5560PA OT1061 PBSS4560PA. PBSS5560PA NXP SMD TRANSISTOR MARKING CODE

    PBSS4041PX

    Abstract: MARKING SMD TRANSISTOR P TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD TRANSISTOR MARKING 6G
    Text: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4041PX SC-62) PBSS4041NX. AEC-Q101 PBSS4041PX MARKING SMD TRANSISTOR P TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD TRANSISTOR MARKING 6G

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.


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    PDF PBHV8540X SC-62) PBHV9040X. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS4041PX SC-62) PBSS4041NX. AEC-Q101 PBSS4041PX

    PBLS4003D

    Abstract: tsop6 marking 312
    Text: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PDF PBLS4003D OT457 SC-74) PBLS4003D tsop6 marking 312

    TRANSISTOR SMD MARKING CODE f6

    Abstract: PBLS2001D
    Text: PBLS2001D 20 V PNP BISS loadswitch Rev. 01 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


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    PDF PBLS2001D OT457 SC-74) PBLS2001D TRANSISTOR SMD MARKING CODE f6

    PBLS4001D

    Abstract: No abstract text available
    Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 02 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


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    PDF PBLS4001D OT457 SC-74) PBLS4001D

    PBLS4002D

    Abstract: No abstract text available
    Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PDF PBLS4002D OT457 SC-74) PBLS4002D

    PBLS4001D

    Abstract: No abstract text available
    Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


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    PDF PBLS4001D OT457 SC-74) PBLS4001D

    PBSS301ND

    Abstract: PBSS301PD
    Text: PBSS301ND 20 V, 4 A NPN low VCEsat BISS transistor Rev. 01 — 5 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD.


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    PDF PBSS301ND OT457 SC-74) PBSS301PD. PBSS301ND PBSS301PD

    PBSS4350D

    Abstract: PBSS5350D
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101 PBSS4350D PBSS5350D

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


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    PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    Untitled

    Abstract: No abstract text available
    Text: PMPB47XP 30 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


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    PDF PMPB47XP DFN2020MD-6 OT1220) Quic11

    Untitled

    Abstract: No abstract text available
    Text: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


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    PDF PMPB29XPE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchMOSTM transistor Standard level FET KUK7605-30A 1 .2 7 -0+ 0.1.1 TO-263 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 0.1max +0.1 1.27-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 +0.1 1.27-0.1


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    PDF KUK7605-30A O-263

    PBHV8115Z

    Abstract: PBHV9115Z SC-73
    Text: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.


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    PDF PBHV8115Z OT223 SC-73) PBHV9115Z. AEC-Q101 PBHV8115Z PBHV9115Z SC-73

    MARKING CODE SMD IC

    Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
    Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


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    PDF PBHV8540T O-236AB) PBHV9040T. AEC-Q101 PBHV8540T MARKING CODE SMD IC PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23

    KUK110-50GL

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK110-50GL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 5 V input level Low threshold voltage also allows 5 V control


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    PDF KUK110-50GL O-263 KUK110-50GL

    l14 254

    Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
    Text: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The


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    PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 l14 254 AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026

    transistor SMD 12E

    Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


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    PDF BFS469L6 BFR460L3, BFR949L3) transistor SMD 12E SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36