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    SMD TRANSISTOR 68 W Search Results

    SMD TRANSISTOR 68 W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 68 W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 PDF

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 PDF

    3C95

    Abstract: d2s diode series zener SOD-123 1-800-515-8514 1N4148B smd transistor pinout sot23 TL431 SMD AND8119 d2s 51 diode 1N5239B SMD
    Text: AND8247/D Application Note for a 6.5 W POE DC to DC Converter Prepared by: Frank Cathell ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION converters at the load end of the cables which transform the 48 V to logic levels such as 5.0 Vdc or 3.3 Vdc or both, to


    Original     		AND8247/D 3C95 d2s diode series zener SOD-123 1-800-515-8514 1N4148B smd transistor pinout sot23 TL431 SMD AND8119 d2s 51 diode 1N5239B SMD PDF

    transformer egston

    Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
    Text: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and


    Original     		AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical PDF

    smd transistor A7p

    Abstract: smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
    Text: LF Driver ATA5279 with Channel Extension Using NMOS Antenna Multiplexer 1. Description Several automotive Passive Entry applications require more than the six LF antennas usually supported by the ATA5279 LF driver. Figure 1-1 on page 2 shows how to expand the device to drive a greater number 9 of LF antennas. In this proposal, an


    Original     		ATA5279 ATA5279 smd transistor A7p smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p PDF

    4894B

    Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
    Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring


    Original     		ATAK5278-82 ATA5278 ATA5282. ATA5278 ATA5282, 4894B 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols PDF

    smd transistor 203

    Abstract: MSD230 SC-75 SC-89 smd transistor 493
    Text: Philips Semiconductors’ family of resistor-equipped transistors offers a cost-effective solution for next-generation consumer products. These small-signal devices integrate up to two bias resistors Resistor-equipped transistors – diffused with the transistor in a single die – to save board space


    Original     		PDF

    atmel 0720

    Abstract: 3DC1515S ATAK5276-83 ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283
    Text: LF Wake-up Demonstrator ATAK5276-83 1. General Description ATAK5276-83 is intended to demonstrate the performance of an LF wake-up channel needed for battery-driven systems. Typical wake-up applications can be found in vehicles for Tire Pressure Monitoring TPM .


    Original     		ATAK5276-83 ATAK5276-83 ATAB5276) ATAB5283) ATA5276 ATA5283 4857C atmel 0720 3DC1515S ATAB5276 ATAB5282 3DC1515S-0477X smd x17 auto transmission in vehicles using microcontroller smd transistor t2 ATAB5283 PDF

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor PDF

    6 pin TRANSISTOR SMD CODE 21

    Abstract: No abstract text available
    Text: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)


    Original     		6N1135, 6N1136 i179081 2002/95/EC 2002/96/EC i179081 6N1135 6N1136 11-Mar-11 6 pin TRANSISTOR SMD CODE 21 PDF

    smd transistor 312

    Abstract: rf amplifier siemens 10 ghz SIEMENS MICROWAVE RADIO 8 GHz BGA310 BGA312 BGA318 Siemens MMIC Polytechnic diagram radar circuit SMX-1
    Text: APPLICATIONS MMICs Gerhard Lohninger ● Knut Brenndörfer Jakob Huber ● Thomas Pollakowski Monolithic broadband amplifiers go mobile In wireless communications, there is a distinct trend toward more compact and lighter terminals. This means that the components used


    Original     		PDF

    smd transistor marking a7

    Abstract: amplifier A62 marking A76A LMV711 LMV712 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		LMV712 LMV712 200pF smd transistor marking a7 amplifier A62 marking A76A LMV711 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM PDF

    how to test scr

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		LMV712 200pF how to test scr PDF

    Untitled

    Abstract: No abstract text available
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They


    Original     		LMV712 200pF PDF

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Text: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


    Original     		AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc PDF

    SMD TRANSISTOR MARKING 1M

    Abstract: smd transistor marking BL A76A NV SMD TRANSISTOR smd transistor marking TL differential pair cascode SMD TRANSISTOR MARKING 76 LMV712 LMV712BL LMV712LD
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a


    Original     		LMV712 LMV712 200pF SMD TRANSISTOR MARKING 1M smd transistor marking BL A76A NV SMD TRANSISTOR smd transistor marking TL differential pair cascode SMD TRANSISTOR MARKING 76 LMV712BL LMV712LD PDF

    smd 2sd882

    Abstract: 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v
    Text: UM0674 Application note STEVAL-ISA054V1, 100 W SMPS based on the STW9N150 Power MOSFET and UC3844B for industrial applications Introduction This document introduces a solution for industrial power supplies. It takes advantage of the high voltage Power MOSFET, i.e. 1500 V breakdown voltage, to optimize the operation of


    Original     		UM0674 STEVAL-ISA054V1, STW9N150 UC3844B UC3844B. L5970D, smd 2sd882 2SB772 SMD 47nF-X2 UM0674 uc3844b application note 2SB772 equivalent MAGNETICA TRANSFORMER 230VAC to 5V DC POWER SUPPLY with transformer, br 2sd882 equivalent 68uf450v PDF

    SMD TRANSISTOR MARKING 76

    Abstract: smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a


    Original     		LMV712 LMV712 200pF SMD TRANSISTOR MARKING 76 smd a62 smd marking CF smd a61 differential pair cascode SMD A115 LMV712MM LMV712MMX LMV712TL LMV711 PDF

    smd diode 949

    Abstract: transistor SMD 361 C120T101 diode c05*10 varistor 60 volt C050T331 C050T4R7 varistors rfe transistor a 949 JMV0402C050T120
    Text: MULTILAYER CHIP VARISTOR JMV C Series: SMD ESD & EMI MOV INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in


    Original     		C5BC01 C050T4R7 C050T100 C050T120 C050T150 C050T220 C050T390 C050T470 C050T560 C050T820 smd diode 949 transistor SMD 361 C120T101 diode c05*10 varistor 60 volt C050T331 C050T4R7 varistors rfe transistor a 949 JMV0402C050T120 PDF

    SMD A115

    Abstract: differential pair cascode LMV711 LMV712 LMV712BL LMV712LD LMV712LDX LMV712MM LMV712MMX
    Text: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-toRail inputs combined with speed and low noise. They offer a


    Original     		LMV712 LMV712 200pF SMD A115 differential pair cascode LMV711 LMV712BL LMV712LD LMV712LDX LMV712MM LMV712MMX PDF

    transistor C143

    Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
    Text: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999


    Original     		ElanSC520 000MHz 768kHz 333MHz 318MHz ECSMA-25 ECSMA-24 ECPSM29T-32 transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231 PDF

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13 PDF

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 PDF

    smd diode K7

    Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
    Text: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter


    OCR Scan     		2SA1795 2SA1796 2SC4668 2SC4669 D1FL40 D2FL40 DE3L40 DE5LC40 D1FL20U D2FL20U smd diode K7 TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f PDF