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    SMD TRANSISTOR HY Search Results

    SMD TRANSISTOR HY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR HY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2SD1622

    Abstract: MARKING SMD TRANSISTOR 560 SMD TRANSISTOR MARKING DE MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1622 250mm2X0 2SD1622 MARKING SMD TRANSISTOR 560 SMD TRANSISTOR MARKING DE MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR smd transistor 560

    transistor SMD DK

    Abstract: smd transistor marking DK transistor smd marking dk smd MARKING dk transistor 2SD1628 SMD SMD marking DK ON MARKING SMD NPN TRANSISTOR BR MARKING SMD TRANSISTOR transistor SMD DK -RN 2SD1628
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SD1628 250mm2X0 transistor SMD DK smd transistor marking DK transistor smd marking dk smd MARKING dk transistor 2SD1628 SMD SMD marking DK ON MARKING SMD NPN TRANSISTOR BR MARKING SMD TRANSISTOR transistor SMD DK -RN 2SD1628

    smd ic marking 1A

    Abstract: 2SD1997 MARKING SMD npn TRANSISTOR 1a
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SD1997 smd ic marking 1A 2SD1997 MARKING SMD npn TRANSISTOR 1a

    2SD1619

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1619 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V


    Original     		PDF 2SD1619 250mm2X0 2SD1619

    smd optocoupler

    Abstract: TCMT1020 TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic
    Text: TCMT1020 Series TELEFUNKEN Semiconductors SMD Optocoupler with Phototransistor Output Description The TCMT1020 Series consist of a gallium arsenid infrared emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in a 8 lead SOIC package.


    Original     		PDF TCMT1020 D-74025 smd optocoupler TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic

    Bv4 smd transistor

    Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and


    Original     		PDF ISO/TS16949 CSB624 OT-23 CSD596 C-120 CSB624Rev 160803E Bv4 smd transistor MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5

    Bv4 smd transistor

    Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and


    Original     		PDF ISO/TS16949 9001Certified CSB624 OT-23 CSD596 C-120 CSB624Rev 160803E Bv4 smd transistor TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5

    smd transistor MARKING 2A npn

    Abstract: TRANSISTOR MARKING DM npn smd 2a smd diode marking 2a TRANSISTOR MARKING DM W SMD TRANSISTOR MARKING 2v 2SD1998 NPN MARKING 2A transistor marking 2a MARKING DM
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,


    Original     		PDF 2SD1998 100mA smd transistor MARKING 2A npn TRANSISTOR MARKING DM npn smd 2a smd diode marking 2a TRANSISTOR MARKING DM W SMD TRANSISTOR MARKING 2v 2SD1998 NPN MARKING 2A transistor marking 2a MARKING DM

    SMD Transistor DN

    Abstract: MARKING DN 2SD1999 20 diode
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1999 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,


    Original     		PDF 2SD1999 150mA SMD Transistor DN MARKING DN 2SD1999 20 diode

    2SD1621

    Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,


    Original     		PDF 2SD1621 2SD1621 SMD TRANSISTOR MARKING Dd smd transistor 560

    SMD TRANSISTOR MARKING BR

    Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,


    Original     		PDF 2SC4705 250mm2X0 100mA SMD TRANSISTOR MARKING BR MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12

    smd transistor marking DF

    Abstract: smd transistor df MARKING SMD TRANSISTOR 560 MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1623 transistor SMD DF transistor smd marking df smd transistor 560
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1623 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied


    Original     		PDF 2SD1623 smd transistor marking DF smd transistor df MARKING SMD TRANSISTOR 560 MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1623 transistor SMD DF transistor smd marking df smd transistor 560

    smd transistor marking cf

    Abstract: MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity,


    Original     		PDF 2SC3650 500mA 500mA, smd transistor marking cf MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650

    2SD1620

    Abstract: transistor smd br
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1620 Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low


    Original     		PDF 2SD1620 2SD1620 transistor smd br

    zener diode BN

    Abstract: smd diode marking BN smd transistor bn marking BN smd transistor marking BN smd zener 2SD2324 500mAIB
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Contains a diode between colletor and emitter. 0.4 3 Low saturation voltage. 1 Large current capacity. 0.55


    Original     		PDF 2SD2324 OT-23 500mA zener diode BN smd diode marking BN smd transistor bn marking BN smd transistor marking BN smd zener 2SD2324 500mAIB

    smd transistor HY 20

    Abstract: smd transistor HY 30
    Text: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1663 SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ● Collector Power Dissipation: PC=500mW 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1


    Original     		PDF KTA1663 OT-89 500mW -10mA, -500mA smd transistor HY 20 smd transistor HY 30

    Untitled

    Abstract: No abstract text available
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1663 SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ● Collector Power Dissipation: PC=500mW 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1


    Original     		PDF KTA1663 OT-89 500mW -500mA

    smd transistor marking PA

    Abstract: smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd
    Text: Transistors IC SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 0.55 Low-voltage, low-current, low-noise and high-gain


    Original     		PDF 2SC3663 OT-23 smd transistor marking PA smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd

    moc3041 dimmer

    Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
    Text: Welcome to the Isocom Components information booklet! 4 Pin DIL & SMD Optocouplers 6 Pin DIL & SMD Optocouplers 8 Pin DIL & SMD Optocouplers 16 Pin DIL & SMD Optocouplers 8 & 16 Pin Symmetrical Terminal Configuration DIL & SMD Optocouplers Special Purpose 6 Pin DIL & SMD Optocouplers Triac & Schmitt Trigger


    Original     		PDF Unbeata140 PAA150 LAA100 LAA110 LAA126 LAA127 LAA120 LAA125 LCB110 LCB111 moc3041 dimmer tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh

    transistor smd R11

    Abstract: TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23
    Text: NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB High Intensity LED Drivers Using NCP3065/NCV3065 Evaluation Board User's Manual Introduction http://onsemi.com EVAL BOARD USER’S MANUAL High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light


    Original     		PDF NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB NCP3065/NCV3065 EVBUM2155/D transistor smd R11 TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23

    smd transistor Q5

    Abstract: SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc
    Text: AND8298 High Intensity LED Drivers Using NCP3065/NCV3065 Prepared by: Petr Konvicny ON Semiconductor http://onsemi.com Introduction High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light sources. Improvements in high brightness LEDs present the


    Original     		PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor Q5 SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc

    smd transistor K2 pnp digital

    Abstract: BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD
    Text: AND8298 High Intensity LED Drivers Using NCP3065/NCV3065 Prepared by: Petr Konvicny ON Semiconductor http://onsemi.com Introduction High brightness LEDs are a prominent source of light and have better efficiency and reliability than conventional light sources. Improvements in high brightness LEDs present the


    Original     		PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor K2 pnp digital BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD