oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003PY
OT669
LFPAK56)
PHPT61003NY
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.
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PHPT610030NK
OT1205
LFPAK56D)
PHPT610030PK.
PHPT610030NPK.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003NY
OT669
LFPAK56)
AEC-Q101
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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Original
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
sot669 footprint
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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PHPT61003NY
OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.
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PHPT610035NK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610035PK.
PHPT610035NPK.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.
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PHPT610030NPK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610030PK.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.
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Original
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PHPT60603PY
OT669
LFPAK56)
PHPT60603NY.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
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PHPT61002PYC
OT669
LFPAK56)
PHPT61002NYC.
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Untitled
Abstract: No abstract text available
Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail able 4. Reflow soldering available
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CPT-181
950nmlR3tCttSSSHSH
CL-200IRt
CL-200IR
L-2001R
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DSAIH0002562
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
DSAIH0002562
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s7d smd
Abstract: SMD s7d BKC Semiconductors DSAIH0002561
Text: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OCR Scan
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OT-23
s7d smd
SMD s7d
BKC Semiconductors
DSAIH0002561
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smd transistor LR
Abstract: smd transistor 3U DSAIH0002561
Text: SMD SOT-23 Plastic Switching Diode Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
smd transistor LR
smd transistor 3U
DSAIH0002561
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11733
Abstract: BKC Semiconductors DSAIH0002562 transistor 117-33
Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
11733
BKC Semiconductors
DSAIH0002562
transistor 117-33
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BKC Semiconductors
Abstract: LR1 transistor smd transistor LR
Text: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
BKC Semiconductors
LR1 transistor
smd transistor LR
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transistor SMD Lf
Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
transistor SMD Lf
LF transistor smd SOT-23
lF smd transistor
SMD Transistor LF
BKC Semiconductors
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PH smd transistor PH
Abstract: diode for clippers BKC Semiconductors DSAIH0002541 LR1 transistor
Text: SMD SOT-23 Plastic Use Advantages Switching Diode —0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OT-23
100pA
PH smd transistor PH
diode for clippers
BKC Semiconductors
DSAIH0002541
LR1 transistor
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DSAIH00025320
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages "0 ET Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OCR Scan
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OT-23
DSAIH00025320
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PDF
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BKC Semiconductors
Abstract: No abstract text available
Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages S 13 Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,
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OCR Scan
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OT-23
BKC Semiconductors
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BUZ100
Abstract: BSS10
Text: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston
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O-220
BUZ100L
C67078-S1354-A2
T05155
BUZ100
BSS10
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