STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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Original
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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PDF
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02N80C3
Abstract: No abstract text available
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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SPD02N80C3
PG-TO252-3
02N80C3
02N80C3
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02N80C3
Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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SPD02N80C3
PG-TO252-3
02N80C3
02N80C3
JESD22
SPD02N80C3
Transistor d12 t
smd G47
02n80c
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PDF
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Untitled
Abstract: No abstract text available
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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SPD02N80C3
PG-TO252-3
02N80C3
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PDF
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Untitled
Abstract: No abstract text available
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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SPD02N80C3
PG-TO252-3
02N80C3
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PDF
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Untitled
Abstract: No abstract text available
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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SPD02N80C3
PG-TO252-3
02N80C3
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PDF
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SPP02N60S5
Abstract: 02n60s5
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
SPP02N60S5
02n60s5
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PDF
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02N60
Abstract: g25 SMD Transistor SMD Transistor g25 02N60C3 SMD MARKING CODE g25 A70 SMD 02n60c smd transistor ds SOT 23 SP*02N60 SPN02N60C3
Text: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type
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Original
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SPN02N60C3
OT223
Q67040-S4553
02N60C3
02N60
g25 SMD Transistor
SMD Transistor g25
02N60C3
SMD MARKING CODE g25
A70 SMD
02n60c
smd transistor ds SOT 23
SP*02N60
SPN02N60C3
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PDF
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Untitled
Abstract: No abstract text available
Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications
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Original
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SPD02N80C3
PG-TO252-3
02N80C3
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PDF
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Untitled
Abstract: No abstract text available
Text: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type
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Original
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SPN02N60C3
OT223
Q67040-S4553
02N60C3
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PDF
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SMD Transistor g25
Abstract: g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60
Text: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type
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Original
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SPN02N60C3
OT223
Q67040-S4553
02N60C3
SMD Transistor g25
g25 SMD Transistor
SP*02N60
02N60C3
SPN02N60C3
DF marking code smd transistor
02n60
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PDF
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02N60S5
Abstract: SPN02N60S5 VPS05163
Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3
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Original
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SPN02N60S5
OT-223
Q67040-S4207
VPS05163
02N60S5
02N60S5
SPN02N60S5
VPS05163
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PDF
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SPN02N60S5
Abstract: No abstract text available
Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance
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Original
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SPN02N60S5
OT-223
VPS05163
Q67040-S4207
02N60S5
SPN02N60S5
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PDF
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Untitled
Abstract: No abstract text available
Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances
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Original
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SPU02N60S5
SPD02N60S5
PG-TO252
PG-TO251
Q67040-S4226
02N60S5
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PDF
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02n60s5
Abstract: SPN02N60S5 VPS05163 02N6
Text: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3
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Original
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SPN02N60S5
OT-223
Q67040-S4207
VPS05163
02N60S5
02n60s5
SPN02N60S5
VPS05163
02N6
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PDF
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02n60s5
Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5
Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances
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Original
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SPU02N60S5
SPD02N60S5
PG-TO252
PG-TO251
Q67040-S4226
02N60S5
02n60s5
Transistor 02N60S5
02N60
02n60s
spd02n60s5
SPU02N60S5
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PDF
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SPN02N60S5
Abstract: No abstract text available
Text: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity
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Original
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SPN02N60S5
OT-223
VPS05163
Q67040-S4207
02N60S5
SPN02N60S5
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PDF
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02N60
Abstract: SPD02N60S5 SPU02N60S5
Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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Original
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SPU02N60S5
SPD02N60S5
P-TO252
P-TO251-3-1
SPU02N60S5
Q67040-S4226
Q67040-S4213
02N60
SPD02N60S5
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PDF
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SPB02N60S5
Abstract: No abstract text available
Text: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
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Original
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SPB02N60S5
PG-TO263
SPB02N60S5
Q67040-S4212
02N60S5
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PDF
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SPB02N60S5
Abstract: No abstract text available
Text: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
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Original
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SPB02N60S5
P-TO263-3-2
SPB02N60S5
Q67040-S4212
02N60S5
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PDF
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SPP02N60S5
Abstract: 02N60S5
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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Original
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
SPP02N60S5
02N60S5
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PDF
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Untitled
Abstract: No abstract text available
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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Original
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
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PDF
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02N60S5
Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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SPU02N60S5
SPD02N60S5
SPUx5N60S5/SPDx5N60S5
SPU02N60S5
P-T0251
02N60S5
Q67040-S4226
P-T0252
02N60S5
SMD TRANSISTOR MARKING 02N
SPD02N60S5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-T0220-3-1
02N60S5
Q67040-S4181
P-T0263-3-2
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PDF
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