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    SMD TRANSISTOR MARKING 24 Search Results

    SMD TRANSISTOR MARKING 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR MARKING 24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ts 4141 TRANSISTOR smd

    Abstract: CSA1162 CSA1162GR CSA1162Y equivalent transistor smd 3 em 7 MARKING SMD pnp TRANSISTOR ec
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE


    Original     		PDF OT-23 CSA1162 CSA1162Y CSA1162GR C-120 ts 4141 TRANSISTOR smd CSA1162 equivalent transistor smd 3 em 7 MARKING SMD pnp TRANSISTOR ec

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l

    transistor smd marking Y 1 sot-23

    Abstract: ts 4141 TRANSISTOR smd CSA1362 CSA1362GR MARKING SMD pnp TRANSISTOR ec Device marking 160
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transistor Marking CSA1362GR = 62 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CSA1362 CSA1362GR C-120 transistor smd marking Y 1 sot-23 ts 4141 TRANSISTOR smd CSA1362 CSA1362GR MARKING SMD pnp TRANSISTOR ec Device marking 160

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y–3E


    Original     		PDF OT-23 CSA1162 CSA1162Y CSA1162GR C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE


    Original     		PDF OT-23 CSA1162 CSA1162Yâ CSA1162GR C-120

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    2L smd transistor

    Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401

    CSA1362

    Abstract: CSA1362GR
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1362GR = 62 Pin configuration


    Original     		PDF OT-23 CSA1362 CSA1362GR C-120 CSA1362 CSA1362GR

    smd transistor marking BL

    Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL smd transistor marking 1E smd transistor .1G CSC2712 ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23

    2L smd transistor

    Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking


    Original     		PDF OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd transistor 2l

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF CSC2712 OT-23 CSC2712Y CSC2712GR CSC2712BL C-120 ts 4141 TRANSISTOR smd

    smd transistor marking BL

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL

    smd transistor A1 sot-23

    Abstract: ts 4141 TRANSISTOR smd transistor smd marking NA sot-23 SMD IC ts 4141 smd transistor A1 SMD TRANSISTOR A1 SOT23 smd transistor 304 smd transistor A1 3 PIN smd transistor 015 G smd transistor t A1 sot-23 npn
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor


    Original     		PDF BCX41 OT-23 BCX41 C-120 240310E smd transistor A1 sot-23 ts 4141 TRANSISTOR smd transistor smd marking NA sot-23 SMD IC ts 4141 smd transistor A1 SMD TRANSISTOR A1 SOT23 smd transistor 304 smd transistor A1 3 PIN smd transistor 015 G smd transistor t A1 sot-23 npn

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor


    Original     		PDF BCX41 OT-23 BCX41 C-120 240310E ts 4141 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P–N–P transisto r Marking CSA1362GR = 62 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CSA1362 CSA1362GR C-120

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		PDF SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5401 C-120

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor

    telefunken ta 750

    Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
    Text: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings


    Original     		PDF D-74025 telefunken ta 750 S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking

    04N03LA

    Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA 04n03l smd marking D50 P-TO251-3-1 P-TO252-3-11 smd diode marking c3

    04N03LA

    Abstract: IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04N03LA P-TO251-3-1 P-TO252-3-11

    Untitled

    Abstract: No abstract text available
    Text: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1