Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage
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BCV62
BCV62A
BCV62C
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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smd diode marking Ja sot
Abstract: No abstract text available
Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide
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CJ3404-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR05
smd diode marking Ja sot
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PDF
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MOSFET TRANSISTOR SMD MARKING CODE
Abstract: MOSFET marking smd
Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide
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CJ3404-HF
OT-23
OT-23,
MIL-STD-750,
QW-JTR05
MOSFET TRANSISTOR SMD MARKING CODE
MOSFET marking smd
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PDF
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A08K
Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4
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KO3416
OT-23-3
A08K
a08k transistor
SMD TRANSISTOR mosfet marking pd
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO
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BCV62
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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PDF
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702 TRANSISTOR smd
Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance
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2N7002K
OT-23
702 TRANSISTOR smd
702 TRANSISTOR smd SOT23
70.2 TRANSISTOR smd
702 5 TRANSISTOR smd
DIODE smd marking 702
smd transistor 702
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PDF
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TRANSISTOR SMD MARKING CODE QR
Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE QR
MOSFET TRANSISTOR SMD MARKING CODE NA
MOSFET TRANSISTOR SMD MARKING CODE 11
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Untitled
Abstract: No abstract text available
Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2
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OT-23
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PDF
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKXB
DFN1010B-6
OT1216)
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PDF
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SMD transistor Marking 1x
Abstract: No abstract text available
Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB8032XP
DFN2020-6
OT1118)
SMD transistor Marking 1x
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6
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IPx65R190C6
IPA65R190C6,
IPB65R190C6
IPI65R190C6,
IPP65R190C6
IPW65R190C6
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PDF
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: P-CHANNEL MOSFET
Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
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PMC85XP
DFN2020-6
OT1118)
MOSFET TRANSISTOR SMD MARKING CODE 11
P-CHANNEL MOSFET
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SMD TRANSISTOR MARKING code TC
Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6
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IPx65R190C6
IPA65R190C6,
IPB65R190C6
IPI65R190C6,
IPP65R190C6
IPW65R190C6
SMD TRANSISTOR MARKING code TC
SMD mosfet MARKING code C6
65C6190
g1 TRANSISTOR SMD MARKING CODE
Diode type SMD marking SJ
transistor smd code marking KEY
Diode SMD SJ 19
ipa65r
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING A1 MOSFET TRANSISTOR SMD MARKING CODE 11 PMFPB6545 smd transistor marking y1
Text: PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 8 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB6545UP
OT1118
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING A1
MOSFET TRANSISTOR SMD MARKING CODE 11
PMFPB6545
smd transistor marking y1
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SMD TRANSISTOR MARKING 1B
Abstract: No abstract text available
Text: ' 1 PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB6532UP
DFN2020-6
OT1118)
SMD TRANSISTOR MARKING 1B
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
Text: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB6532UP
OT1118
MOSFET TRANSISTOR SMD MARKING CODE A1
transistor marking codes K 044
PMFPB6532
MOSFET TRANSISTOR SMD 033
marking code 1b
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65E6190
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6
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IPx65R190E6
IPA65R190E6,
IPB65R190E6
IPI65R190E6,
IPP65R190E6
IPW65R190E6
65E6190
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PDF
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB950UPE
DFN1010B-6
OT1216)
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PDF
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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SI8822
30VGS
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65E6190
Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6
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IPx65R190E6
IPA65R190E6,
IPB65R190E6
IPI65R190E6,
IPP65R190E6
IPW65R190E6
65E6190
diode smd E6
smd diode E6
Diode SMD SJ 19
Diode type SMD marking SJ
IPW65R190E6
MOSFET TRANSISTOR SMD MARKING CODE 11
smd marking code E6
ipa65r
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PDF
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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PDF
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TRANSISTOR SMD MARKING CODE MV DIODE
Abstract: No abstract text available
Text: ' 1 PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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Original
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PMFPB6545UP
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE MV DIODE
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PDF
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6r3k3c6
Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPD60R3K3C6
6r3k3c6
transistor SMD MARKING CODE 772
IPD60R3K3C6
TRANSISTOR SMD MARKING CODE 42
JESD22
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PDF
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