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    SMD TRANSISTOR P1D Search Results

    SMD TRANSISTOR P1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR P1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566

    1.B smd transistor

    Abstract: No abstract text available
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance


    Original     		PDF BFR460L3 1.B smd transistor

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: No abstract text available
    Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 1 • Low noise figure: 1.1 dB at 1.8 GHz 2 • SMD leadless package • Excellent ESD performance typical value > 1500V HBM


    Original     		PDF BFR460L3 TRANSISTOR SMD MARKING CODE 1v

    Untitled

    Abstract: No abstract text available
    Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 • Low noise figure: 1.1 dB at 1.8 GHz 1 2 • SMD leadless package • Excellent ESD performance typical value 1500V HBM


    Original     		PDF BFR460L3

    SMD TRANSISTOR MARKING 2e

    Abstract: SMD TRANSISTOR MARKING 1B BFR460L3 TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC SMD transistor MARKING code 1g ZL 58 MARKING SMD IC CODE BFR193L3 TRANSISTOR SMD MARKING CODE 26
    Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 1 • Low noise figure: 1.1 dB at 1.8 GHz 2 • SMD leadless package • Excellent ESD performance typical value 1500V HBM


    Original     		PDF BFR460L3 SMD TRANSISTOR MARKING 2e SMD TRANSISTOR MARKING 1B BFR460L3 TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC SMD transistor MARKING code 1g ZL 58 MARKING SMD IC CODE BFR193L3 TRANSISTOR SMD MARKING CODE 26

    smd transistor marking 1p Z

    Abstract: BFR460L3 smd transistor marking 1p SMD TRANSISTOR MARKING 1B
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance


    Original     		PDF BFR460L3 Aug-04-2004 smd transistor marking 1p Z BFR460L3 smd transistor marking 1p SMD TRANSISTOR MARKING 1B

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARKING CODE ag SMD TRANSISTOR MARKING 2e TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 1v TRANSISTOR SMD MARKING CODE 2X 6 TRANSISTOR SMD MARKING CODE 2e marking 2X smd code marking 1G
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance


    Original     		PDF BFR460L3 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARKING CODE ag SMD TRANSISTOR MARKING 2e TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 1v TRANSISTOR SMD MARKING CODE 2X 6 TRANSISTOR SMD MARKING CODE 2e marking 2X smd code marking 1G

    2T marking

    Abstract: TRANSISTOR SMD MARKING CODE 1v SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE 2t
    Text: BFR460L3 NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers 3 • Low noise figure: 1.1 dB at 1.8 GHz 1 2 • SMD leadless package • Excellent ESD performance typical value > 1500V HBM


    Original     		PDF BFR460L3 2T marking TRANSISTOR SMD MARKING CODE 1v SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE 2t

    smd transistor 1p data

    Abstract: GMA marking MARKING TSLP 1P SMD TRANSISTOR MARKING 2e BFR460L3 smd transistor marking zs 25G20
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data  For low voltage / low current applications 3  Ideal for VCO modules and low noise amplifiers  Low noise figure: 1.1 dB at 1.8 GHz 1  World's smallest SMD leadless package 2  Excellent ESD performance >1500V HBM


    Original     		PDF BFR460L3 May-14-2003 smd transistor 1p data GMA marking MARKING TSLP 1P SMD TRANSISTOR MARKING 2e BFR460L3 smd transistor marking zs 25G20

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c

    K1 MARK 6PIN

    Abstract: TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE marking code E2 p SMD Transistor Transistors smd mark code SMD MARKING code 1G SMD 6PIN IC MARKING CODE p marking 4B2 TRANSISTOR SMD MARKING CODE 2x I MARKING CODE SMD zs

    Untitled

    Abstract: No abstract text available
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3)

    SMD 6PIN IC MARKING CODE

    Abstract: SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) SMD 6PIN IC MARKING CODE SMD 6PIN IC MARKING CODE p marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE ag MARKING CODE SMD IC marking MARKING CODE SMD zs BFR460L3 BFS360L6 BFS36

    zs transistor

    Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Jun-15-2004 zs transistor BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl

    smd transistor 6b1

    Abstract: smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Aug-04-2004 smd transistor 6b1 smd transistor marking zs ZL 58 smd transistor zl BFR460L3 MARKING SMD NPN TRANSISTOR BR smd transistor 1c1 smd marking AB 6 PIN

    marking code E2 p SMD Transistor

    Abstract: smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag
    Text: BFS460L6 NPN Silicon RF TWIN Transistor* • High fT of 22 GHz 4 • For low voltage / low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) marking code E2 p SMD Transistor smd marking CODE 1c1 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 4b2 marking TRANSISTOR SMD MARKING CODE ag BFS36 transistor smd marking Ag

    smd transistor 6b1

    Abstract: smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin
    Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS460L6 BFR460L3) Sep-01-2003 smd transistor 6b1 smd transistor marking zs BFS460L6 smd transistor marking sep smd transistor zl BFR460L3 6B1 transistor smd 6 pin

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102