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    SMD TRANSISTOR P2 Search Results

    SMD TRANSISTOR P2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR P2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


    Original     		PDF LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45

    4P04L06

    Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
    Text: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-06 4P04L06 smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    transistor SMD P2F

    Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
    Text: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage


    Original     		PDF PXT2907A transistor SMD P2F smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    IPB80P04P4-07

    Abstract: PG-TO262-3-1 S 6085 J 4P0407
    Text: IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.4 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-07 S 6085 J 4P0407

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04

    p2n04l03

    Abstract: SPB160N04S2L-03 ANPS071E BSPB160N04S2L-03 Q67060-S6138 INFINEON PART MARKING to263
    Text: SPB160N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 2.7 mΩ ID 160 A • Logic Level • High Current Rating P- TO263 -7-3 • Low On-Resistance RDS(on) • 175°C operating temperature


    Original     		PDF SPB160N04S2L-03 SPB160N04S2L-03 Q67060-S6138 P2N04L03 BSPB160N04S2L-03, p2n04l03 ANPS071E BSPB160N04S2L-03 Q67060-S6138 INFINEON PART MARKING to263

    SMD TRANSISTOR MARKING P2

    Abstract: MARKING SMD PNP TRANSISTOR 2a smd transistor marking 1A TRANSISTOR SMD PNP 1A FCX591A transistor p2 marking smd ic marking 1a TRANSISTOR SMD 1A MARKING SMD PNP TRANSISTOr 1a
    Text: Transistors SMD Type Medium Power Transistor FCX591A SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 0.44-0.1 +0.1 2.50-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 4.00-0.1 PNP silicon planar.


    Original     		PDF FCX591A OT-89 -100mA, -500mA, -20mA -100mA -50mA -100mA* -500mA* -50mA, SMD TRANSISTOR MARKING P2 MARKING SMD PNP TRANSISTOR 2a smd transistor marking 1A TRANSISTOR SMD PNP 1A FCX591A transistor p2 marking smd ic marking 1a TRANSISTOR SMD 1A MARKING SMD PNP TRANSISTOr 1a

    moc3041 dimmer

    Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
    Text: Welcome to the Isocom Components information booklet! 4 Pin DIL & SMD Optocouplers 6 Pin DIL & SMD Optocouplers 8 Pin DIL & SMD Optocouplers 16 Pin DIL & SMD Optocouplers 8 & 16 Pin Symmetrical Terminal Configuration DIL & SMD Optocouplers Special Purpose 6 Pin DIL & SMD Optocouplers Triac & Schmitt Trigger


    Original     		PDF Unbeata140 PAA150 LAA100 LAA110 LAA126 LAA127 LAA120 LAA125 LCB110 LCB111 moc3041 dimmer tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    6 PIN SMD IC FOR SMPS

    Abstract: smd diode p80 smps ic smd 8 pin pin SMD IC FOR SMPS circuits 6 PIN SMD IC FOR SMPS primary 8 PIN SMD IC FOR SMPS NPN Transistor TO92 Vitrohm GH82 ICE2A0565Z 716296
    Text: Version 1.0 , September 2002 Application Note AN-EvalMF2-ICE2A0565Z-1 CoolSET 6W Bias Supply for SMPS with ICE2A0565Z Author: Bernd Ilchmann Finepower GmbH Published by Infineon Technologies AG http://www.infineon.com/coolset Power Management & Supply N e v e r


    Original     		PDF AN-EvalMF2-ICE2A0565Z-1 ICE2A0565Z AN-EvalMF2-ICE2A0565Z-1-1 6 PIN SMD IC FOR SMPS smd diode p80 smps ic smd 8 pin pin SMD IC FOR SMPS circuits 6 PIN SMD IC FOR SMPS primary 8 PIN SMD IC FOR SMPS NPN Transistor TO92 Vitrohm GH82 ICE2A0565Z 716296

    TRANSISTOR SMD CODE B7

    Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
    Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.


    OCR Scan     		PDF PMBT3906 PMBT3906 TRANSISTOR SMD CODE B7 TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE

    transistor smd ALG

    Abstract: transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg
    Text: • bbSBIBl OOSSAbb blfl ■ APX N AMER PHILIPS/DISCRETE PM BT3906 b?E D 7V SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature SMD plastic envelope intended for surface mounted applications. The PMBT3906 is primarily intended for use in telephony and professional communication equipment.


    OCR Scan     		PDF BT3906 PMBT3906 transistor smd ALG transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg

    smd transistor 2g

    Abstract: N06LT PHB21N06LT PHD21N06LT PHP21N06LT SC18 T0220AB N06L SMD footprint design
    Text: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • PH P21N 06LT, P H B 21N 06LT P H D 21N 06LT ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


    OCR Scan     		PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) OT404 PHD21N0. PHP21 N06LT, smd transistor 2g N06LT PHD21N06LT SC18 T0220AB N06L SMD footprint design