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    SMD TRANSISTOR QG Search Results

    SMD TRANSISTOR QG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR QG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    SMD transistor code NC

    Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
    Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance


    Original     		PDF 2N7002 OT-23, OT-23 MIL-STD-202G, SMD transistor code NC DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    68NC

    Abstract: 2SK3573 transistor 42A
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode


    Original     		PDF 2SK3573 O-263 68NC 2SK3573 transistor 42A

    2 input and gate 24v

    Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode


    Original     		PDF 2SK3575 O-263 2 input and gate 24v gate drive protection smd transistor 26 2SK3575 2SK35

    BSO200P03S

    Abstract: 1A smd mosfet TRANSISTOR SMD 1a 9 diode 91A IC MOSFET QG MOSFET KV MOSFET Rise Time 1 ns smd transistor dp smd diode dp smd rgs
    Text: MOSFET IC SMD Type MOS Small Signal Transistor KSO200P03S BSO200P03S Features P-Channel Enhancement mode Logic level Avalanche rated dv /dt rated Ideal for fast switching buck converter Absolute Maximum Ratings Ta = 25 Parameter Continuous drain current Symbol


    Original     		PDF KSO200P03S BSO200P03S) BSO200P03S 1A smd mosfet TRANSISTOR SMD 1a 9 diode 91A IC MOSFET QG MOSFET KV MOSFET Rise Time 1 ns smd transistor dp smd diode dp smd rgs

    2SK3570

    Abstract: 930 diode smd
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode


    Original     		PDF 2SK3570 O-263 2SK3570 930 diode smd

    2SK3572

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. VDD = 16 V, VGS = 10 V, ID = 80 A Built-in gate protection diode +0.2


    Original     		PDF 2SK3572 O-263 2SK3572

    2SK3467

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode


    Original     		PDF 2SK3467 O-263 2SK3467

    SMD 20A

    Abstract: 2SK3404
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode


    Original     		PDF 2SK3404 O-263 SMD 20A 2SK3404

    2SK3571

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3571 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 21 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode +0.2


    Original     		PDF 2SK3571 O-263 2SK3571

    Untitled

    Abstract: No abstract text available
    Text: NX7002AK 60 V, single N-channel Trench MOSFET 13 December 2012 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002AK O-236AB)

    smd transistor QG

    Abstract: smd transistor 26 2SK3713
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max


    Original     		PDF 2SK3713 O-263 smd transistor QG smd transistor 26 2SK3713

    2SK3405

    Abstract: smd transistor nc 64
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3405 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 34 nC TYP. ID = 48 A, VDD = 16V, VGS = 10 V +0.1 0.81-0.1


    Original     		PDF 2SK3405 O-263 2SK3405 smd transistor nc 64

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    TRANSISTOR SMD MARKING CODE QR

    Abstract: 2PMV65XP
    Text: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB) TRANSISTOR SMD MARKING CODE QR 2PMV65XP

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138AKA O-236AB) AEC-Q101

    transistor smd wz

    Abstract: No abstract text available
    Text: SO T8 83 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKM DFN1006-3 OT883) transistor smd wz

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX7002BK O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZ370UNE DFN1006-3 OT883)

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZ600UNE DFN1006-3 OT883)

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMZ600UNE DFN1006-3 OT883)

    04n03la

    Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		PDF IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04n03la 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV250EPEA O-236AB) AEC-Q101