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    SMD TRANSISTOR V2 Search Results

    SMD TRANSISTOR V2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR V2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    BFS17

    Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 D-74025 bfs17 Vishay 702 TRANSISTOR sot-23 85038

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1"

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

    702 TRANSISTOR smd SOT23

    Abstract: 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 702 TRANSISTOR smd SOT23 70.2 marking smd npn Transistor 704 TRANSISTOR smd SOT23 smd transistor marking j5 transistor smd 661 752 SMD IC marking 632 smd marking 271 Sot transistor SOT23 J5 smd transistor 718

    70.2 marking smd npn Transistor

    Abstract: SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23
    Text: BFS17 / BFS17R / BFS17W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • SMD package 2 3 1 Applications SOT-23 For broadband amplifiers up to 1 GHz. Mechanical Data Typ: BFS17 Case: SOT-23 Plastic case


    Original     		PDF BFS17 BFS17R BFS17W OT-23 OT-23 BFS17W 70.2 marking smd npn Transistor SMD IC marking 632 702 TRANSISTOR smd SOT23 smd transistor marking j5 70.2 TRANSISTOR smd smd transistor 718 transistor marking 702 application sot-23 MARKING 636 transistor smd 661 752 704 TRANSISTOR smd SOT23

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06

    SDV1005E

    Abstract: V5R5
    Text: Multilayer Chip Varistor – SDV Series Operating Temp. : -55℃~+125℃ FEATURES SMD type suitable for high density mounting Excellent clamping ratio and quick response time <0.5ns Excellent solderability (Ni, Sn plating) ● ● ● APPLICATIONS Transient voltage protection for IC and transistor


    Original     		PDF 1005-1pF 1005-2pF SDV1608 1608-1pF 1608-2pF SDV1005E V5R5

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor

    m6175

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ


    Original     		PDF IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB25N06S3L-22 IPI25N06S3L-22 PG-TO263-3-2 m6175

    70.2 marking smd npn Transistor

    Abstract: transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 70.2 marking smd npn Transistor transistor smd 661 752 702 TRANSISTOR smd SOT23 smd transistor marking j5 smd marking 271 Sot 704 TRANSISTOR smd SOT23 SMD IC marking 632 SOT23 marking 828 SOT MARKING 213 transistor smd marking NA sot-23

    3PN0402

    Abstract: IPB120N04S3-02 smd diode UM 08
    Text: Preliminary Data Sheet IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified


    Original     		PDF IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB120N04S3-02 IPI120N04S3-02 3PN0402 smd diode UM 08

    70.2 marking smd npn Transistor

    Abstract: smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17 BFS17R BFS17W transistor smd marking NA sot-23
    Text: BFS17 / BFS17R / BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • High power gain SMD package e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 Applications


    Original     		PDF BFS17 BFS17R BFS17W OT-23 2002/95/EC 2002/96/EC OT-323 BFS17 OT-23 70.2 marking smd npn Transistor smd marking 271 Sot SMD IC marking 632 transistor smd 661 752 704 TRANSISTOR smd SOT23 702 TRANSISTOR smd SOT23 BFS17W transistor smd marking NA sot-23

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    2N06L11

    Abstract: IPP80N06S2L-11 IPB80N06S2L-11 IPI80N06S2L-11 PG-TO263-3-2
    Text: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 10.7 80 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18177 2N06L11 2N06L11 IPP80N06S2L-11 IPB80N06S2L-11 IPI80N06S2L-11 PG-TO263-3-2

    2n06l05

    Abstract: SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2
    Text: IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19004 2N06L05 2n06l05 SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2

    2N06L11

    Abstract: TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104
    Text: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS 55 V • N-channel Logic Level - Enhancement mode R DS on ,max (SMD version) 10.7 mW • Automotive AEC Q101 qualified ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18177 2N06L11 2N06L11 TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2

    PN06L13

    Abstract: IPD50N06S2L-13 ANPS071E PG-TO252-3-11
    Text: IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 12.7 mΩ 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S2L-13 PG-TO252-3-11 PN06L13 PN06L13 IPD50N06S2L-13 ANPS071E PG-TO252-3-11

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		PDF BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357