MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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BSS84 P
Abstract: BSS84 GSOT-23
Text: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features
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BSS84
BSS84 P
BSS84
GSOT-23
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BSS84 MARKING CODE
Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.
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BSS84
O-236AB
BSS84/DG
BSS84 MARKING CODE
TRANSISTOR SMD CODE PACKAGE SOT23
NXP SMD TRANSISTOR MARKING CODE
smd code marking WV
TRANSISTOR SMD MARKING CODES
TRANSISTOR SMD MARKING CODE A1
marking code DG SMD Transistor
BSS84 Equivalent
BSS84
marking code e1 smd
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BSS84
Abstract: BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327
Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.
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BSS84
O-236AB
BSS84/DG
BSS84
BSS84 nxp
TRANSISTOR SMD MARKING CODES
BSS84 marking
marking code DG SMD Transistor
bss84 e-6327
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bss84
Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.
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BSS84
BSS84
BSS84/DG
O-236AB
771-BSS84-T/R
TRANSISTOR SMD MARKING CODE A1
marking code DG SMD Transistor
BSS84.215
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TRANSISTOR SMD
Abstract: No abstract text available
Text: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.
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NTE2401
NTE2401
100MHz
TRANSISTOR SMD
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SMD 3B
Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
Text: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)
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KPCF8402
SMD 3B
smd Transistor 1116
transistor smd 2b
SMD SINGLE GATE
KPCF8402
3b smd transistor
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smd transistor yf
Abstract: smd marking YF smd marking YE SMD TRANSISTOR MARKING 28 marking YG marking YF YF 215 2SC3728 hFE CLASSIFICATION Marking 017V
Text: Transistors SMD Type Small Signal Transistor 2SC3728 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25
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2SC3728
500mW.
100mA
-10mA
smd transistor yf
smd marking YF
smd marking YE
SMD TRANSISTOR MARKING 28
marking YG
marking YF
YF 215
2SC3728
hFE CLASSIFICATION Marking
017V
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2SK3112
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3112 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available
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2SK3112
O-263
2SK3112
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2SK3296
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1
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2SK3296
O-263
2SK3296
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720 TRANSISTOR smd sot-223
Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
Text: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2
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KSP92
OT-223
720 TRANSISTOR smd sot-223
KSP92
KSP92 equivalent
720 TRANSISTOR smd sot
40X40
transistor 720 smd
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SMD Transistors nc
Abstract: smd transistor QG SMD Transistor nc SMD SINGLE GATE 2SK3325 SMD Transistors 2sk3325
Text: Transistors IC SMD Type MOS Field Effect Transistor 2SK3325 TO-263 1 .2 7 -0+ 0.1.1 Features Low gate charge: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 Avalanche capability ratings +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1
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2SK3325
O-263
SMD Transistors nc
smd transistor QG
SMD Transistor nc
SMD SINGLE GATE
2SK3325
SMD Transistors 2sk3325
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2SK3507
Abstract: No abstract text available
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3507 TO-252 Features 4.5 V drive available +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low on-state resistance +0.8 0.50-0.7 Built-in G-S protection diode 2.3 Surface mount package available +0.1 0.60-0.1
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2SK3507
O-252
2SK3507
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2SK2133
Abstract: smd transistor 26
Text: IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK2133 TO-263 +0.1 1.27 -0.1 Features Low on-resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.2 15.25 -0.2 0.1max +0.1 1.27-0.1 +0.2 5.28 -0.2 High avalanche capabil
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2SK2133
O-263
2SK2133
smd transistor 26
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702 TRANSISTOR smd
Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance
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2N7002K
OT-23
702 TRANSISTOR smd
702 TRANSISTOR smd SOT23
70.2 TRANSISTOR smd
702 5 TRANSISTOR smd
DIODE smd marking 702
smd transistor 702
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smd transistor 83
Abstract: No abstract text available
Text: Transistors SMD Type P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 0.1max +0.05 0.90-0.05 +0.2 -0.2 Direct interface to C-MOS,TTL,etc High-speed switching +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2
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KSP230
OT-223
smd transistor 83
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SMD Transistor h14
Abstract: MARKING H14 transistor smd h14 2SJ203 resisor
Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ203 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Possible to reduce the number of parts by omitting the bias resisor. 0.55 Not necessary to consider driving current thanks to hight input impedance. +0.1 1.3-0.1
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2SJ203
OT-23
-10mA
SMD Transistor h14
MARKING H14
transistor smd h14
2SJ203
resisor
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SMD Transistor g16
Abstract: marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4
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2SK1590
OT-23
SMD Transistor g16
marking G16
marking g16 sot23
g16 sot23
smd transistor marking 26
smd transistor 26
2SK1590
5V GATE TO SOURCE VOLTAGE MOSFET
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Mosfet 100V 50A
Abstract: 2SK3109
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available
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2SK3109
O-263
Mosfet 100V 50A
2SK3109
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68NC
Abstract: 2SK3573 transistor 42A
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
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2SK3573
O-263
68NC
2SK3573
transistor 42A
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smd transistor ISS
Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28
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2SK3814
O-252
smd transistor ISS
60V 60A TO-252
smd transistor 26
2SK3814
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SMD transistor Mu
Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max
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2SK3794
O-252
SMD transistor Mu
smd mu diode
smd transistor ISS
smd diode Mu
smd MU
78 DIODE SMD
2SK3794
mu diode
SMD Transistor m.u
DIODE SMD 10A
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2SK3322
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3322 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS on = 2.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 2.8A) Avalanche capability ratings
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2SK3322
O-263
20stconditons
2SK3322
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