DTA114EET1
Abstract: DTA114TET1 DTA114YET1 DTA123EET1 DTA124EET1 DTA143EET1 DTA143TET1 DTA144EET1 DTA115EET1
Text: DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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DTA114EET1
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DTA114TET1
DTA114YET1
DTA123EET1
DTA124EET1
DTA143EET1
DTA143TET1
DTA144EET1
DTA115EET1
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s5n02
Abstract: AN569 MMSF5N02HD MMSF5N02HDR2
Text: MMSF5N02HD Preferred Device Power MOSFET 5 Amps, 20 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMSF5N02HD
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s5n02
AN569
MMSF5N02HD
MMSF5N02HDR2
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AN569
Abstract: MTB30P06V MTB30P06VT4
Text: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTB30P06V
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AN569
MTB30P06V
MTB30P06VT4
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2955E
Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.
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MMFT2955E
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2955E
AN569
MMFT2955E
MMFT2955ET1
MMFT2955ET3
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AN569
Abstract: MTD1N80E SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate
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MTD1N80E/D
MTD1N80E
MTD1N80E/D*
AN569
MTD1N80E
SMD310
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AN569
Abstract: MTD1302 MTD1302T4 SMD310
Text: MTD1302 Advance Information Power MOSFET 20 Amps, 30 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
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MTD1302
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onsemi SOT-223
Abstract: MMFT2406T1 MMFT2406T3 SMD310 T2406
Text: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223
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MMFT2406T1
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onsemi SOT-223
MMFT2406T1
MMFT2406T3
SMD310
T2406
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AN569
Abstract: MTB60N05HD MTB60N05HDL MTB60N05HDT4 SMD310
Text: MTB60N05HDL Preferred Device Power MOSFET 60 Amps, 50 Volts, Logic Level N–Channel D2PAK The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with
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MTB60N05HDL
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MTB60N05HDL/D
AN569
MTB60N05HD
MTB60N05HDL
MTB60N05HDT4
SMD310
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AN569
Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
Text: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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MTDF1C02HD
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MTDF1C02HD/D
AN569
MTDF1C02HD
MTDF1C02HDR2
SMD310
"step recovery diode" 1.7 pf
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AN569
Abstract: MTB9N25E SMD310
Text: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB9N25E/D
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AN569
MTB9N25E
SMD310
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t3055vl
Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
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t3055vl
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3055vl
MTD3055VL1
3055V
AN569
MTD3055VL
MTD3055VLT4
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AN569
Abstract: MTB2N60E SMD310
Text: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB2N60E/D
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AN569
MTB2N60E
SMD310
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AN569
Abstract: MTD10N10EL SMD310
Text: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM
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MTD10N10EL/D
MTD10N10EL
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AN569
MTD10N10EL
SMD310
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AN569
Abstract: MTB3N100E SMD310 LS 1316
Text: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate
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AN569
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SMD310
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AN569
Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2
Text: MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–
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MMDF2C02HD
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D2C02
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MTD5N10
Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
Text: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM
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MTD6N10E/D
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AN569
SMD310
SOT 23 MOSFET
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5n02
Abstract: 5N02Z AN569 MMDF5N02Z MMDF5N02ZR2 10E-04
Text: MMDF5N02Z Power MOSFET 5 Amps, 20 Volts N–Channel SO–8, Dual EZFETst are an advanced series of Power MOSFETs which contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS on and true logic
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MMDF5N02Z
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MMDF5N02Z
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10E-04
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M50P03HDL
Abstract: m50p03 AN569 MTB50P03HDL MTB50P03HDLT4
Text: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
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MTB50P03HDL
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1N50E
Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
Text: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage
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t1n50e
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AN569
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MTD1N50ET4
T1-N50E
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paste
Abstract: AN569 MTD3N25E SMD310
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
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MTD3N25E/D
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AN569
MTD3N25E
SMD310
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D2P03
Abstract: MMDF2P03HD AN569 MMDF2P03HDR2 Q302
Text: MMDF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF2P03HD
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AN569
MMDF2P03HDR2
Q302
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20N03HL
Abstract: MTD20N03HDL1 MTD20N03HDLT4 AN569 MTD20N03HDL
Text: MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time.
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MTD20N03HDL
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20N03HL
MTD20N03HDL1
MTD20N03HDLT4
AN569
MTD20N03HDL
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AN569
Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
Text: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
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MTD2955E/D
MTD2955E
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AN569
MTD2955
MTD2955E
SMD310
MTD2955 sot-223
MTD2955E-D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS
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