Untitled
Abstract: No abstract text available
Text: Jsiizut_/ ^smi-donauctoi LProaueti, Una. Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5061 Silicon NPN Power Transistor 1 DESCRIPTION • High Breakdown Voltage- 2 ! 1 : VCBO= 1500V (Min)
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KSD5061
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Untitled
Abstract: No abstract text available
Text: ^smi-Conductoi ZPioducti, Una. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
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MRF914
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marking v6 zener diode
Abstract: 100 ohms thermistor conversion table 12V FAN CONTROL BY Using 1N4148 marking r25 NPN PWM 12V fan speed control circuit winbond W83783S 2N3904 W83782D 721 diode 2N3904 Transistors
Text: W83783S Winbond H/W Monitoring IC -i- Publication Release Date:August 21, 2007 Revision 1.0 W83783S W83783S Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS n.a. All the versions before 0.50 are for internal use. 0.5 n.a. First publication.
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W83783S
W83783S
marking v6 zener diode
100 ohms thermistor conversion table
12V FAN CONTROL BY Using 1N4148
marking r25 NPN
PWM 12V fan speed control circuit winbond
2N3904
W83782D
721 diode
2N3904 Transistors
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2N3904
Abstract: W83782D W83783S
Text: W83783S Winbond H/W Monitoring IC W83783S Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. n.a. All the version before 0.50 are for internal use. 2 n.a. 98/7 0.5 n.a. First publication. 3 P.36 99/4 0.55 A1 Add the content of Diode Selection Register Index
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W83783S
W83783S
2N7002
1N4148
2N3904
W83782D
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marking v6 zener diode
Abstract: 2N3904 W83782D W83783S
Text: W83783S/W83783G Winbond H/W Monitoring IC W83783S Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. n.a. All the version before 0.50 are for internal use. 2 n.a. 98/7 0.5 n.a. First publication. 3 P.36 99/4 0.55 A1 Add the content of Diode Selection Register Index
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W83783S/W83783G
W83783S
2N7002
1N4148
marking v6 zener diode
2N3904
W83782D
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Untitled
Abstract: No abstract text available
Text: W83783S Winbond H/W Monitoring IC -i- Publication Release Date:May 6, 2005 Revision 1.0 W83783S W83783S Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB MAIN CONTENTS n.a. All the versions before 0.50 are for internal use. 0.5 n.a. First publication.
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W83783S
W83783S
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V6 marking code diode
Abstract: 2N3904 W83782D W83783S 721 diode MOSFET ACER
Text: W83783S Winbond H/W Monitoring IC W83783S Data Sheet Revision History Pages Dates 1 n.a. 2 n.a. 98/7 3 P.36 4 P.38 Version Version on Web Main Contents n.a. All the version before 0.50 are for internal use. 0.5 n.a. First publication. 99/4 0.55 A1 Add the content of Diode Selection Register Index
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W83783S
W83783S
1N4148
2N7002
V6 marking code diode
2N3904
W83782D
721 diode
MOSFET ACER
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MARKING R6 SOP-4
Abstract: D11N4148
Text: W83783S/W83783G Winbond H/W Monitoring IC W83783S Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. n.a. All the version before 0.50 are for internal use. 2 n.a. 98/7 0.5 n.a. First publication. 3 P.36 99/4 0.55 A1 Add the content of Diode Selection Register Index
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W83783S/W83783G
W83783S
Page31
3300p
1N4148
2N7002
MARKING R6 SOP-4
D11N4148
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smartfan2
Abstract: No abstract text available
Text: W83L784AR Winbond H/W Monitoring IC W83L784AR W83L784AR Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 2 n.a. 01/ Aug. 3 n.a 02/Apr n.a. All the version before 0.50 are for internal use. 0.6 n.a. First publication. 1.0
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W83L784AR
W83L784AR
02/Apr
1N4148
784AP
smartfan2
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circuit diagram of cruise controlled system
Abstract: MOSFET 719 cruise control 2N3904 W83782D W83L784R battery acer
Text: W83L784R Winbond H/W Monitoring IC W83L784R Preliminary W83L784R Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. n.a. All the version before 0.50 are for internal use. 2 n.a. 99/4 0.5 n.a. First publication. 3 P.5657 99/6
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W83L784R
pin15)
1N4148
W83L784R
784AP
circuit diagram of cruise controlled system
MOSFET 719
cruise control
2N3904
W83782D
battery acer
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784R
Abstract: No abstract text available
Text: W83L784R Winbond H/W Monitoring IC -i- Publication Release Date: May 17, 2005 Revision A1 W83L784R Table of Contents1. GENERAL DESCRIPTION . 1 2. FEATURES. 1
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W83L784R
W83L784R
784R
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2N3904
Abstract: W83L784G W83L784R
Text: W83L784R/ W83L784G W83L784R/W83L784G Winbond H/W Monitoring IC -I- Publication Release Date: Jan. 2005 Revision 1.1 W83L784R/G W83L784R Data Sheet Revision History PAGES DATES VERSION VERSION MAIN CONTENTS ON WEB 1 n.a. n.a. All the versions before 0.50 are for internal
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W83L784R/
W83L784G
W83L784R/W83L784G
W83L784R/G
W83L784R
pin15)
2N3904
W83L784G
W83L784R
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marking diode 51h
Abstract: No abstract text available
Text: W83L784R/W83L784G Winbond H/W Monitoring IC W83L784R/G W83L784R Data Sheet Revision History PAGES DATES VERSION VERSION MAIN CONTENTS ON WEB 1 n.a. n.a. All the versions before 0.50 are for internal use. 2 n.a. 4/99 0.5 n.a. First publication. 3 P.56-57 6/99
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W83L784R/W83L784G
W83L784R/G
W83L784R
pin15)
marking diode 51h
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Untitled
Abstract: No abstract text available
Text: W83L785R WINBOND H/W MONITORING IC FOR NOTEBOOK 1. GENERAL DESCRIPTION W83L785R is a condensed product of W83L785R - Winbond's most popular hardware monitoring IC for notebook. Specifically designed for the graphic cards and notebook systems, W83L785R can be
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W83L785R
W83L785R
W83L785R.
2N3904
W83784R
1N4148
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transistor GP30
Abstract: RSMRST smartfan3 DIODE GP25
Text: Winbond LPC I/O W83627THF Date: May 21, 2003 Revision: 0.7 W83627THF W83627THF Data Sheet Revision History PAGES 1 2 3 N.A. P.104 P.117~120 P.116~122 DATES VERSION 01/16/2003 0.50 03/25/2003 0.60 04/10/2003 0.70 WEB VERSION MAIN CONTENTS First published preliminary version.
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W83627THF
W83627THF
3300P
IO-12V
transistor GP30
RSMRST
smartfan3
DIODE GP25
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SOT-23 6C
Abstract: SMD MARKING CODE D1 SOT-89 sot-89 MARKING CODE Ba MARKING CODE SMD IC 531 SOT-23 marking BF 6C SOT23 SMD MARKING CODE BF sot-89 sot-89 Marking LB sot 223 marking code AH Transistors smd 1G
Text: GENERAL PURPOSE SMI NPN TRANSISTORS DESCRIPTION •Philips Com ponents general purpose transistors combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These transistors provide a broad selection
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OT-89
OT-223
boarCX70K
PMBT2222
PMBT2222A
PMBT3903
PMBT3904
PMBTA05
PMBTA20
PXT2222A
SOT-23 6C
SMD MARKING CODE D1 SOT-89
sot-89 MARKING CODE Ba
MARKING CODE SMD IC 531
SOT-23 marking BF
6C SOT23 SMD MARKING CODE
BF sot-89
sot-89 Marking LB
sot 223 marking code AH
Transistors smd 1G
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2F PNP SOT23
Abstract: MARKING 2F SOT23 4A SMD CODE SOT23 4G SOT-23 marking code 4f sot23 marking codes transistors iSS SMD MARKING CODE 4E marking codes SOT iSS marking c7 sot-23 MARKING H7 SOT-23
Text: IOW NOISE SMI TRANSISTORS DESCRIPTION •Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.
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PMBT5089
BC849B
BC849C
PMBT5088
BCF32
BCF33
BC850B
BC850C
BCF81
PMBT6429
2F PNP SOT23
MARKING 2F SOT23
4A SMD CODE SOT23
4G SOT-23
marking code 4f sot23
marking codes transistors iSS
SMD MARKING CODE 4E
marking codes SOT iSS
marking c7 sot-23
MARKING H7 SOT-23
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SM3159
Abstract: SM2160P SML12303 SML2170 SM2160 SML-12 TIP5 P039 SM1258 SM1259
Text: MAE D • Ö1331Ö7 DDQDMST bSb SEMELABI SEMELAB Type Number P039 SM1258 SM1259 5H2159 SM2160 SM2160P SM2163 SM2164 SH2165 SM3151 SH3153 SM3159 SM3174 SH3186 SM6259 SML12303 SML2166 SMI.2167 SM1.2168 SM1.2169 SML2170 SML2171 SML4005 SML4005S SML4007 SML4007A
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SM1258
SM1259
SH2159
SM2160
SM2160P
SM2163
SM2164
SH2165
20min
SH3151
SM3159
SM2160P
SML12303
SML2170
SM2160
SML-12
TIP5
P039
SM1258
SM1259
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Untitled
Abstract: No abstract text available
Text: IO W NOISE SMI TRANSISTORS DESCRIPTION • Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed lowcurrent specifications for noise, gain and saturation voltages.
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OT-23
C849B
C850B
C850C
BC859A
C859B
BCF29
BCF30
T5088
T5086
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T-23
Abstract: No abstract text available
Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety of chip geometries in order to offer high voltage transistors with a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application
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OT-89
OT-223
OT-23
OT-89
T-23
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PMBT2369
Abstract: PMBT4401
Text: SMI SWITCHING TRANSISTORS DESCRIPTION • Philips Components sw itching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the devices. All are specified for turn-off and turn-on
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OT-23,
OT-89
OT-223,
BSP43
BSR12
BSR13
BSR14
OT-89
OT-223
OT-223
PMBT2369
PMBT4401
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SOT89 MARKING 2E
Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application
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OT-89
OT-223
BF821
BF822
BF823
BSP16
BSP20
BSR19
BSR19A
BSR20
SOT89 MARKING 2E
SOT89 MARKING 2d
marking codes transistors sot-223
SOT-23 MARKING T36
bt1 marking
DA SOT-89
df SOT-223
DA SOT-89 NPN
MARKING 2D SOT-89
PMBT5551
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ion chamber
Abstract: SM110 pn2222a fairchild circuit for piezoelectric sensor fire alarm using zener ion metal detector smoke detector schematic schematic 4772 mosfet driver ion chamber smoke
Text: designed for . . • a SMI 10 micropower smoke detector circuit BENEFITS • Smoke Detector Systems High Impedance Sensor Trip Point Detector • Streamlines U L Approval of Smoke Detector System o U L C om ponent Recognized o A llo w s Systems to Meet 1 Year Life
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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