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    Text: SMN18T50P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS = 500V  Low gate charge: Qg=46nC Typ.  Low drain-source On resistance: RDS(on)=0.3 (Max.)  100% avalanche tested  RoHS compliant device


    Original     		SMN18T50P SMN18T50 O-220AB SDB20D45 29-AUG-11 KSD-T0P028-000 PDF